Dual-Use Regulation

02021R0821-20220505 → 02021R0821-20230112

compared line by line: this provision is too large to compare word by word, so a marked line is a line that changed somewhere

ANNEX I LIST OF DUAL-USE ITEMS REFERRED TO IN ARTICLE 3 OF THIS REGULATION The list of dual-use items contained in this Annex implements internationally agreed dual-use controls including the Australia Grouphttps://www.australiagroup.net/, the Missile Technology Control Regime (MTCR)http://mtcr.info/, the Nuclear Suppliers Group (NSG)http://www.nuclearsuppliersgroup.org/, the Wassenaar Arrangementhttp://www.wassenaar.org/ and the Chemical Weapons Convention (CWC)https://www.opcw.org/chemical-weapons-convention. … 19 unchanged lines … 4. In some instances, chemicals are listed by name and CAS number. The list applies to chemicals of the same structural formula (including hydrates) regardless of name or CAS number. CAS numbers are shown to assist in identifying a particular chemical or mixture, irrespective of nomenclature. CAS numbers cannot be used as unique identifiers because some forms of the listed chemical have different CAS numbers, and mixtures containing a listed chemical may also have different CAS numbers. NUCLEAR TECHNOLOGY NOTE (NTN) (To be read in conjunction with section E of Category 0.) The "technology" directly associated with any goods controlled in Category 0 is controlled according to the provisions of Category 0. The "technology" directly associated with any goods controlled in Category 0 is controlled according to the provisions of Category 0. "Technology" for the "development", "production" or "use" of goods under control remains under control even when applicable to non-controlled goods. The approval of goods for export also authorises the export to the same end-user of the minimum "technology" required for the installation, operation, maintenance and repair of the goods. Controls on "technology" transfer do not apply to information "in the public domain" or to "basic scientific research". … 24 unchanged lines … c. The minimum necessary "object code" for the installation, operation, maintenance (checking) or repair of those items whose export has been authorised. Note: Entry c. of the General Software Note does not release "software" specified in Category 5, Part 2 ("Information Security"). GENERAL "INFORMATION SECURITY" NOTE (GISN) "Information security" items or functions should be considered against the provisions in Category 5, Part 2, even if they are components, "software" or functions of other items. "Information security" items or functions should be considered against the provisions in Category 5, Part 2, even if they are components, "software" or functions of other items. EDITORIAL PRACTICES IN THE OFFICIAL JOURNAL OF THE EUROPEAN UNION In accordance with the rules set out in the Interinstitutional style guide, for texts in English published in the Official Journal of the European Union: a comma is used to separate the whole number from decimals, … 42 unchanged lines … EB Exploding Bridge EB-PVD Electron Beam Physical Vapour Deposition EBW Exploding Bridge Wire ECAD Electronic Computer-Aided Design ECM Electro-Chemical Machining EDM Electrical Discharge Machines EFI Exploding Foil Initiators EIRP Effective Isotropic Radiated Power EMP Electromagnetic Pulse ENOB Effective Number of Bits ERF Electrorheological Finishing ERP Effective Radiated Power ESD Electrostatic Discharge ETO Emitter Turn-Off Thyristor ETT Electrical Triggering Thyristor EU European Union EUV Extreme Ultraviolet FADEC Full Authority Digital Engine Control FFT Fast Fourier Transform FPGA Field Programmable Gate Array FPIC Field Programmable Interconnect FPLA Field Programmable Logic Array FPO Floating Point Operation FWHM Full-Width Half-Maximum GAAFET Gate-All-Around Field-Effect Transistor GLONASS Global Navigation Satellite System GNSS Global Navigation Satellite System GPS Global Positioning System … 112 unchanged lines … b. The common design and process technology; and c. The common basic characteristics. "Basic scientific research" (GTN NTN) means experimental or theoretical work undertaken principally to acquire new knowledge of the fundamental principles of phenomena or observable facts, not primarily directed towards a specific practical aim or objective. "Bias" (accelerometer) (7) means the average over a specified time of accelerometer output, measured at specified operating conditions, that has no correlation with input acceleration or rotation. "Bias" is expressed in g or in metres per second squared (g or m/s2). (IEEE Std 528-2001) (Micro g equals 1 × 10–6 g). "Bias" (accelerometer) (7) means the average over a specified time of accelerometer output, measured at specified operating conditions, that has no correlation with input acceleration or rotation. "Bias" is expressed in g or in metres per second squared (g or m/s2). (IEEE Std 528-2001) (Micro g equals 1 × 10-6 g). "Bias" (gyro) (7) means the average over a specified time of gyro output measured at specified operating conditions that has no correlation with input rotation or acceleration. "Bias" is typically expressed in degrees per hour (deg/hr). (IEEE Std 528-2001). "Biological agents" (1) are pathogens or toxins, selected or modified (such as altering purity, shelf life, virulence, dissemination characteristics, or resistance to UV radiation) to produce casualties in humans or animals, degrade equipment or damage crops or the environment. "Camming" (2) means axial displacement in one revolution of the main spindle measured in a plane perpendicular to the spindle faceplate, at a point next to the circumference of the spindle faceplate (Reference: ISO 230-1:1986, paragraph 5.63). "CEP" (7) means "Circular Error Probable" - In a circular normal distribution, the radius of the circle containing 50 % of the individual measurements being made, or the radius of the circle within which there is a 50 % probability of being located. "Chemical laser" (6) means a "laser" in which the excited species is produced by the output energy from a chemical reaction. "Chemical mixture" (1) means a solid, liquid or gaseous product made up of two or more components which do not react together under the conditions under which the mixture is stored. "Circulation-controlled anti-torque or circulation controlled direction control systems" (7) are systems that use air blown over aerodynamic surfaces to increase or control the forces generated by the surfaces. "Civil aircraft" (1 3 4 7) means those "aircraft" listed by designation in published airworthiness certification lists by the civil aviation authorities of one or more EU Member States or Wassenaar Arrangement Participating States to fly commercial civil internal and external routes or for legitimate civil, private or business use. N.B. See also "aircraft". "Communications channel controller" (4) means the physical interface which controls the flow of synchronous or asynchronous digital information. It is an assembly that can be integrated into computer or telecommunications equipment to provide communications access. "Compensation systems" (6) consist of the primary scalar sensor, one or more reference sensors (e.g., vector "magnetometers") together with software that permit reduction of rigid body rotation noise of the platform. "Compensation systems" (6) consist of the primary scalar sensor, one or more reference sensors (e.g., vector "magnetometers") together with software that permit reduction of the rigid body rotation noise of the platform. "Composite" (1 2 6 8 9) means a "matrix" and an additional phase or additional phases consisting of particles, whiskers, fibres or any combination thereof, present for a specific purpose or purposes. "III/V compounds" (3 6) means polycrystalline or binary or complex monocrystalline products consisting of elements of groups IIIA and VA of Mendeleyev's periodic classification table (e.g., gallium arsenide, gallium-aluminium arsenide, indium phosphide). "Contouring control" (2) means two or more "numerically controlled" motions operating in accordance with instructions that specify the next required position and the required feed rates to that position. These feed rates are varied in relation to each other so that a desired contour is generated. (ref. ISO/DIS 2806 - 1980). … 16 unchanged lines … "Data-Based Referenced Navigation" ("DBRN") (7) Systems means systems which use various sources of previously measured geo-mapping data integrated to provide accurate navigation information under dynamic conditions. Data sources include bathymetric maps, stellar maps, gravity maps, magnetic maps or 3-D digital terrain maps. "Depleted uranium" (0) means uranium depleted in the isotope 235 below that occurring in nature. "Development" (GTN NTN All) is related to all phases prior to serial production, such as: design, design research, design analyses, design concepts, assembly and testing of prototypes, pilot production schemes, design data, process of transforming design data into a product, configuration design, integration design, layouts. "Diffusion bonding" (1 2 9) means a solid state joining of at least two separate pieces of metals into a single piece with a joint strength equivalent to that of the weakest material, wherein the principal mechanism is interdiffusion of atoms across the interface. "Diffusion bonding" (1 2) means a solid state joining of at least two separate pieces of metals into a single piece with a joint strength equivalent to that of the weakest material, wherein the principal mechanism is interdiffusion of atoms across the interface. "Digital computer" (4 5) means equipment which can, in the form of one or more discrete variables, perform all of the following: a. Accept data; b. Store data or instructions in fixed or alterable (writable) storage devices; … 33 unchanged lines … "Fractional bandwidth" (3 5) means the "instantaneous bandwidth" divided by the centre frequency, expressed as a percentage. "Frequency hopping" (5 6) means a form of "spread spectrum" in which the transmission frequency of a single communication channel is made to change by a random or pseudo-random sequence of discrete steps. "Frequency switching time" (3) means the time (i.e., delay) taken by a signal when switched from an initial specified output frequency, to arrive at or within any of the following: a. ±100 Hz of a final specified output frequency of less than 1 GHz; or b. ±0,1 part per million of a final specified output frequency equal to or greater than 1 GHz. a. ± 100 Hz of a final specified output frequency of less than 1 GHz; or b. ± 0,1 part per million of a final specified output frequency equal to or greater than 1 GHz. "Fuel cell" (8) is an electrochemical device that converts chemical energy directly into Direct Current (DC) electricity by consuming fuel from an external source. "Fusible" (1) means capable of being cross-linked or polymerized further (cured) by the use of heat, radiation, catalysts, etc., or that can be melted without pyrolysis (charring). "Gate-All-Around Field-Effect Transistor ("GAAFET") (3) means a device having a single or multiple semiconductor conduction channel element(s) with a common gate structure that surrounds and controls current in all of the semiconductor conduction channel elements. N.B. This definition includes nanosheet or nanowire field-effect and surrounding gate transistors and other "GAAFET" semiconductor channel element structures. "Hard selectors" (5) means data or set of data, related to an individual (e.g., family name, given name, e-mail, street address, phone number or group affiliations). "Guidance set" (7) means systems that integrate the process of measuring and computing a vehicles position and velocity (i.e., navigation) with that of computing and sending commands to the vehicles flight control systems to correct the trajectory. "Hybrid integrated circuit" (3) means any combination of integrated circuit(s), or integrated circuit with circuit elements or discrete components connected together to perform (a) specific function(s), and having all of the following characteristics: a. Containing at least one unencapsulated device; b. Connected together using typical IC production methods; c. Replaceable as an entity; and d. Not normally capable of being disassembled. N.B.1. Circuit element: a single active or passive functional part of an electronic circuit, such as one diode, one transistor, one resistor, one capacitor, etc. N.B.2. Discrete component: a separately packaged circuit element with its own external connections. "Image enhancement" (4) means the processing of externally derived information-bearing images by algorithms such as time compression, filtering, extraction, selection, correlation, convolution or transformations between domains (e.g., fast Fourier transform or Walsh transform). This does not include algorithms using only linear or rotational transformation of a single image, such as translation, feature extraction, registration or false coloration. "Immunotoxin" (1) is a conjugate of one cell specific monoclonal antibody and a "toxin" or "sub-unit of toxin", that selectively affects diseased cells. "In the public domain" (GTN NTN GSN), as it applies herein, means "technology" or "software" which has been made available without restrictions upon its further dissemination (copyright restrictions do not remove "technology" or "software" from being "in the public domain"). "Information security" (GSN GISN 5) is all the means and functions ensuring the accessibility, confidentiality or integrity of information or communications, excluding the means and functions intended to safeguard against malfunctions. This includes "cryptography", "cryptographic activation", cryptanalysis, protection against compromising emanations and computer security. Technical Note: Cryptanalysis: analysis of a cryptographic system or its inputs and outputs to derive confidential variables or sensitive data, including clear text. "Instantaneous bandwidth" (3 5 7) means the bandwidth over which output power remains constant within 3 dB without adjustment of other operating parameters. "Insulation" (9) is applied to the components of a rocket motor, i.e., the case, nozzle, inlets, case closures, and includes cured or semi-cured compounded rubber sheet stock containing an insulating or refractory material. It may also be incorporated as stress relief boots or flaps. "Interior lining" (9) is suited for the bond interface between the solid propellant and the case or insulating liner. Usually a liquid polymer based dispersion of refractory or insulating materials, e.g. carbon filled hydroxyl terminated polybutadiene (HTPB) or other polymer with added curing agents sprayed or screeded over a case interior. "Interleaved Analogue-to-Digital Converter (ADC)" (3) means devices that have multiple ADC units that sample the same analogue input at different times such that when the outputs are aggregated, the analogue input has been effectively sampled and converted at a higher sampling rate. "Intrinsic Magnetic Gradiometer" (6) is a single magnetic field gradient sensing element and associated electronics the output of which is a measure of magnetic field gradient. N.B. See also "magnetic gradiometer". N.B. See also "Magnetic Gradiometer". "Intrusion software" (4 5) means "software" specially designed or modified to avoid detection by monitoring tools, or to defeat protective countermeasures, of a computer or network-capable device, and performing any of the following: a. The extraction of data or information, from a computer or network-capable device, or the modification of system or user data; or b. The modification of the standard execution path of a program or process in order to allow the execution of externally provided instructions. … 22 unchanged lines … b. Is confined to a geographical area of moderate size (e.g., office building, plant, campus, warehouse). N.B. Data device means equipment capable of transmitting or receiving sequences of digital information. "Magnetic Gradiometers" (6) are instruments designed to detect the spatial variation of magnetic fields from sources external to the instrument. They consist of multiple "magnetometers" and associated electronics the output of which is a measure of magnetic field gradient. N.B. See also "intrinsic magnetic gradiometer". N.B. See also "Intrinsic Magnetic Gradiometer". "Magnetometers" (6) are instruments designed to detect magnetic fields from sources external to the instrument. They consist of a single magnetic field sensing element and associated electronics the output of which is a measure of the magnetic field. "Materials resistant to corrosion by UF6" (0) include copper, copper alloys, stainless steel, aluminium, aluminium oxide, aluminium alloys, nickel or alloys containing 60 % or more nickel by weight and fluorinated hydrocarbon polymers. "Matrix" (1 2 8 9) means a substantially continuous phase that fills the space between particles, whiskers or fibres. … 47 unchanged lines … "Production" (GTN NTN All) means all production phases, such as: construction, production engineering, manufacture, integration, assembly (mounting), inspection, testing, quality assurance. "Production equipment" (1 7 9) means tooling, templates, jigs, mandrels, moulds, dies, fixtures, alignment mechanisms, test equipment, other machinery and components therefor, limited to those specially designed or modified for "development" or for one or more phases of "production". "Production facilities" (7 9) means "production equipment" and specially designed software therefor integrated into installations for "development" or for one or more phases of "production". "Program" (2 6) means a sequence of instructions to carry out a process in, or convertible into, a form executable by an electronic computer. "Program" (6) means a sequence of instructions to carry out a process in, or convertible into, a form executable by an electronic computer. "Pulse compression" (6) means the coding and processing of a radar signal pulse of long time duration to one of short time duration, while maintaining the benefits of high pulse energy. "Pulse duration" (6) is the duration of a "laser" pulse and means the time between the half-power points on the leading edge and trailing edge of an individual pulse. "Pulsed laser" (6) means a "laser" having a "pulse duration" that is less than or equal to 0,25 seconds. "Quantum cryptography" (5) means a family of techniques for the establishment of shared key for "cryptography" by measuring the quantum-mechanical properties of a physical system (including those physical properties explicitly governed by quantum optics, quantum field theory or quantum electrodynamics). "Radar frequency agility" (6) means any technique which changes, in a pseudo-random sequence, the carrier frequency of a pulsed radar transmitter between pulses or between groups of pulses by an amount equal to or larger than the pulse bandwidth. "Radar spread spectrum" (6) means any modulation technique for spreading energy originating from a signal with a relatively narrow frequency band, over a much wider band of frequencies, by using random or pseudo-random coding. "Radiant sensitivity" (6) is Radiant sensitivity (mA/W) = 0,807 × (wavelength in nm) × Quantum Efficiency (QE). "Radiant sensitivity" (6) is Radiant sensitivity (mA/W) = 0,807 × (wavelength in nm) × Quantum Efficiency (QE). Technical Note: QE is usually expressed as a percentage; however, for the purposes of this formula QE is expressed as a decimal number less than one, e.g., 78 % is 0,78. "Real-time processing" (6) means the processing of data by a computer system providing a required level of service, as a function of available resources, within a guaranteed response time, regardless of the load of the system, when stimulated by an external event. "Repeatability" (7) means the closeness of agreement among repeated measurements of the same variable under the same operating conditions when changes in conditions or non-operating periods occur between measurements. (Reference: IEEE STD 528-2001 (one sigma standard deviation)) "Required" (GTN 3 5 6 7 9), as applied to "technology", refers to only that portion of "technology" which is peculiarly responsible for achieving or extending the controlled performance levels, characteristics or functions. Such "required" "technology" may be shared by different goods. "Riot control agent" (1) means substances which, under the expected conditions of use for riot control purposes, produce rapidly in humans sensory irritation or disabling physical effects which disappear within a short time following termination of exposure. Technical Note: Tear gases are a subset of "riot control agents". "Robot" (2 8) means a manipulation mechanism, which may be of the continuous path or of the point-to-point variety, may use sensors, and has all the following characteristics: a. Is multifunctional; b. Is capable of positioning or orienting material, parts, tools or special devices through variable movements in three dimensional space; c. Incorporates three or more closed or open loop servo-devices which may include stepping motors; and d. Has "user accessible programmability" by means of teach/playback method or by means of an electronic computer which may be a programmable logic controller, i.e., without mechanical intervention. N.B. The above definition does not include the following devices: 1. Manipulation mechanisms which are only manually/teleoperator controllable; 1. Manipulation mechanisms which are only manually/ teleoperator controllable; 2. Fixed sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is mechanically limited by fixed stops, such as pins or cams. The sequence of motions and the selection of paths or angles are not variable or changeable by mechanical, electronic or electrical means; 3. Mechanically controlled variable sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is mechanically limited by fixed, but adjustable stops, such as pins or cams. The sequence of motions and the selection of paths or angles are variable within the fixed programme pattern. Variations or modifications of the programme pattern (e.g., changes of pins or exchanges of cams) in one or more motion axes are accomplished only through mechanical operations; 4. Non-servo-controlled variable sequence manipulation mechanisms which are automated moving devices, operating according to mechanically fixed programmed motions. The programme is variable but the sequence proceeds only by the binary signal from mechanically fixed electrical binary devices or adjustable stops; … 15 unchanged lines … "Space-qualified" (3 6 7) means designed, manufactured or qualified through successful testing, for operation at altitudes greater than 100 km above the surface of the Earth. N.B. A determination that a specific item is "Space-qualified" by virtue of testing does not mean that other items in the same production run or model series are "Space-qualified" if not individually tested. "Special fissile material" (0) means plutonium-239, uranium-233, "uranium enriched in the isotopes 235 or 233", and any material containing the foregoing. "Specific modulus" (0 1 9) is Young's modulus in pascals, equivalent to N/m2 divided by specific weight in N/m3, measured at a temperature of (296 ± 2) K ((23 ± 2)°C) and a relative humidity of (50 ± 5)%. "Specific tensile strength" (0 1 9) is ultimate tensile strength in pascals, equivalent to N/m2 divided by specific weight in N/m3, measured at a temperature of (296 ± 2) K ((23 ± 2)°C) and a relative humidity of (50 ± 5)%. "Specific modulus" (0 1 9) is Young's modulus in pascals, equivalent to N/m2 divided by specific weight in N/m3, measured at a temperature of (296 ± 2) K ((23 ± 2) °C) and a relative humidity of (50 ± 5) %. "Specific tensile strength" (0 1 9) is ultimate tensile strength in pascals, equivalent to N/m2 divided by specific weight in N/m3, measured at a temperature of (296 ± 2) K ((23 ± 2) °C) and a relative humidity of (50 ± 5) %. "Spinning mass gyros" (7) means gyros which use a continually rotating mass to sense angular motion. "Spread spectrum" (5) means the technique whereby energy in a relatively narrow-band communication channel is spread over a much wider energy spectrum. "Spread spectrum" radar (6) - see "Radar spread spectrum". … 85 unchanged lines … In 0B001.b. high strength-to-density ratio material means any of the following: 1. Maraging steel capable of an ultimate tensile strength of 1,95 GPa or more; 2. Aluminium alloys capable of an ultimate tensile strength of 0,46 GPa or more; or 3. "Fibrous or filamentary materials" with a "specific modulus" of more than 3,18 × 106m and a "specific tensile strength" greater than 7,62 × 104 m; 3. "Fibrous or filamentary materials" with a "specific modulus" of more than 3,18 × 106m and a "specific tensile strength" greater than 7,62 × 104 m; 1. Gas centrifuges; 2. Complete rotor assemblies; 3. Rotor tube cylinders with a wall thickness of 12 mm or less, a diameter of between 75 mm and 650 mm, made from high strength-to-density ratio materials; … 19 unchanged lines … 2. Gaseous diffuser housings made of or protected by "materials resistant to corrosion by UF6"; 3. Compressors or gas blowers with a suction volume capacity of 1 m3/min or more of UF6, with a discharge pressure up to 500 kPa, and having a pressure ratio of 10:1 or less, and made of or protected by "materials resistant to corrosion by UF6"; 4. Rotary shaft seals for compressors or blowers specified in 0B001.c.3. and designed for a buffer gas in-leakage rate of less than 1000 cm3/min.; 5. Heat exchangers made of or protected by "materials resistant to corrosion by UF6", and designed for a leakage pressure rate of less than 10 Pa per hour under a pressure differential of 100 kPa; 5. Heat exchangers made of or protected by "materials resistant to corrosion by UF6", and designed for a leakage pressure rate of less than 10 Pa per hour under a pressure differential of 100 kPa; 6. Bellows-sealed valves, manual or automated, shut-off or control, made of or protected by "materials resistant to corrosion by UF6"; d. Equipment and components, specially designed or prepared for aerodynamic separation process, as follows: 1. Separation nozzles consisting of slit-shaped, curved channels having a radius of curvature less than 1 mm, resistant to corrosion by UF6, and having a knife-edge contained within the nozzle which separates the gas flowing through the nozzle into two streams; 2. Cylindrical or conical tubes, (vortex tubes), made of or protected by "materials resistant to corrosion by UF6" and with one or more tangential inlets; 3. Compressors or gas blowers made of or protected by "materials resistant to corrosion by UF6", and rotary shaft seals therefor; 4. Heat exchangers made of or protected by "materials resistant to corrosion by UF6"; 5. Separation element housings, made of or protected by "materials resistant to corrosion by UF6" to contain vortex tubes or separation nozzles; 6. Bellows-sealed valves, manual or automated, shut-off or control, made of or protected by "materials resistant to corrosion by UF6", with a diameter of 40 mm or more; 7. Process systems for separating UF6 from carrier gas (hydrogen or helium) to 1 ppm UF6 content or less, including: a. Cryogenic heat exchangers and cryoseparators capable of temperatures of 153K (–120 °C) or less; b. Cryogenic refrigeration units capable of temperatures of 153 K (–120 °C) or less; a. Cryogenic heat exchangers and cryoseparators capable of temperatures of 153 K (– 120 °C) or less; b. Cryogenic refrigeration units capable of temperatures of 153 K (– 120 °C) or less; c. Separation nozzle or vortex tube units for the separation of UF6 from carrier gas; d. UF6 cold traps capable of freezing out UF6; e. Equipment and components, specially designed or prepared for chemical exchange separation process, as follows: 1. Fast-exchange liquid-liquid pulse columns with stage residence time of 30 s or less and resistant to concentrated hydrochloric acid (e.g. made of or protected by suitable plastic materials such as fluorinated hydrocarbon polymers or glass); 2. Fast-exchange liquid-liquid centrifugal contactors with stage residence time of 30 s or less and resistant to concentrated hydrochloric acid (e.g. made of or protected by suitable plastic materials such as fluorinated hydrocarbon polymers or glass); 3. Electrochemical reduction cells resistant to concentrated hydrochloric acid solutions, for reduction of uranium from one valence state to another; 4. Electrochemical reduction cells feed equipment to take U+4 from the organic stream and, for those parts in contact with the process stream, made of or protected by suitable materials (e.g. glass, fluorocarbon polymers, polyphenyl sulphate, polyether sulfone and resin-impregnated graphite); 5. Feed preparation systems for producing high purity uranium chloride solution consisting of dissolution, solvent extraction and/or ion exchange equipment for purification and electrolytic cells for reducing the uranium U+6 or U+4 to U+3; 6. Uranium oxidation systems for oxidation of U+3 to U+4; f. Equipment and components, specially designed or prepared for ion-exchange separation process, as follows: 1. Fast reacting ion-exchange resins, pellicular or porous macro-reticulated resins in which the active chemical exchange groups are limited to a coating on the surface of an inactive porous support structure, and other composite structures in any suitable form, including particles or fibres, with diameters of 0,2 mm or less, resistant to concentrated hydrochloric acid and designed to have an exchange rate half-time of less than 10 s and capable of operating at temperatures in the range of 373 K (100 °C) to 473 K (200 °C); 1. Fast reacting ion-exchange resins, pellicular or porous macro-reticulated resins in which the active chemical exchange groups are limited to a coating on the surface of an inactive porous support structure, and other composite structures in any suitable form, including particles or fibres, with diameters of 0,2 mm or less, resistant to concentrated hydrochloric acid and designed to have an exchange rate half-time of less than 10 s and capable of operating at temperatures in the range of 373 K (100 °C) to 473 K (200 °C); 2. Ion exchange columns (cylindrical) with a diameter greater than 1000 mm, made of or protected by materials resistant to concentrated hydrochloric acid (e.g. titanium or fluorocarbon plastics) and capable of operating at temperatures in the range of 373 K (100 °C) to 473 K (200 °C) and pressures above 0,7 MPa; 3. Ion exchange reflux systems (chemical or electrochemical oxidation or reduction systems) for regeneration of the chemical reducing or oxidizing agents used in ion exchange enrichment cascades; g. Equipment and components, specially designed or prepared for laser-based separation processes using atomic vapour laser isotope separation, as follows: 1. Uranium metal vaporization systems designed to achieve a delivered power of 1 kW or more on the target for use in laser enrichment; 2. Liquid or vapour uranium metal handling systems specially designed or prepared for handling molten uranium, molten uranium alloys or uranium metal vapour for use in laser enrichment, and specially designed components therefor; N.B. SEE ALSO 2A225. 3. Product and tails collector assemblies for collecting uranium metal in liquid or solid form, made of or protected by materials resistant to the heat and corrosion of uranium metal vapour or liquid, such as yttria-coated graphite or tantalum; 4. Separator module housings (cylindrical or rectangular vessels) for containing the uranium metal vapour source, the electron beam gun and the product and tails collectors; 5. "Lasers" or "laser" systems specially designed or prepared for the separation of uranium isotopes with a spectrum frequency stabilisation for operation over extended periods of time; N.B. SEE ALSO 6A005 AND 6A205. h. Equipment and components, specially designed or prepared for laser-based separation processes using molecular laser isotope separation, as follows: 1. Supersonic expansion nozzles for cooling mixtures of UF6 and carrier gas to 150 K (–123 °C) or less and made from "materials resistant to corrosion by UF6"; 1. Supersonic expansion nozzles for cooling mixtures of UF6 and carrier gas to 150 K (– 123 °C) or less and made from "materials resistant to corrosion by UF6"; 2. Product or tails collector components or devices specially designed or prepared for collecting uranium material or uranium tails material following illumination with laser light, made of "materials resistant to corrosion by UF6"; 3. Compressors made of or protected by "materials resistant to corrosion by UF6", and rotary shaft seals therefor; 4. Equipment for fluorinating UF5 (solid) to UF6 (gas); 5. Process systems for separating UF6 from carrier gas (e.g. nitrogen, argon or other gas) including: a. Cryogenic heat exchangers and cryoseparators capable of temperatures of 153 K (–120 °C) or less; b. Cryogenic refrigeration units capable of temperatures of 153 K (–120 °C) or less; a. Cryogenic heat exchangers and cryoseparators capable of temperatures of 153 K (– 120 °C) or less; b. Cryogenic refrigeration units capable of temperatures of 153 K (– 120 °C) or less; c. UF6 cold traps capable of freezing out UF6; 6. "Lasers" or "laser" systems specially designed or prepared for the separation of uranium isotopes with a spectrum frequency stabilisation for operation over extended periods of time; N.B. SEE ALSO 6A005 AND 6A205. … 50 unchanged lines … 2. Ammonia-hydrogen exchange plants; b. Equipment and components, as follows: 1. Water-hydrogen sulphide exchange towers with diameters of 1,5 m or more, capable of operating at pressures greater than or equal to 2 MPa; 2. Single stage, low head (i.e., 0,2 MPa) centrifugal blowers or compressors for hydrogen sulphide gas circulation (i.e., gas containing more than 70 % by weight hydrogen sulphide, H2S) with a throughput capacity greater than or equal to 56 m3/s when operating at pressures greater than or equal to 1,8 MPa suction and having seals designed for wet H2S service; 2. Single stage, low head (i.e., 0,2 MPa) centrifugal blowers or compressors for hydrogen sulphide gas circulation (i.e., gas containing more than 70 % by weight hydrogen sulphide, H2S) with a throughput capacity greater than or equal to 56 m3/s when operating at pressures greater than or equal to 1,8 MPa suction and having seals designed for wet H2S service; 3. Ammonia-hydrogen exchange towers greater than or equal to 35 m in height with diameters of 1,5 m to 2,5 m capable of operating at pressures greater than 15 MPa; 4. Tower internals, including stage contactors, and stage pumps, including those which are submersible, for heavy water production utilising the ammonia-hydrogen exchange process; 5. Ammonia crackers with operating pressures greater than or equal to 3 MPa for heavy water production utilising the ammonia-hydrogen exchange process; 5. Ammonia crackers with operating pressures greater than or equal to 3 MPa for heavy water production utilising the ammonia-hydrogen exchange process; 6. Infrared absorption analysers capable of on-line hydrogen/deuterium ratio analysis where deuterium concentrations are equal to or greater than 90 % by weight; 7. Catalytic burners for the conversion of enriched deuterium gas into heavy water utilising the ammonia-hydrogen exchange process; 8. Complete heavy water upgrade systems, or columns therefor, for the upgrade of heavy water to reactor-grade deuterium concentration; … 36 unchanged lines … 0C002"Special fissile materials" Note: 0C002 does not control four "effective grammes" or less when contained in a sensing component in instruments. 0C003Deuterium, heavy water (deuterium oxide) and other compounds of deuterium, and mixtures and solutions containing deuterium, in which the isotopic ratio of deuterium to hydrogen exceeds 1:5000. 0C004Graphite having a purity level better than 5 parts per million boron equivalent and with a density greater than 1,50 g/cm3 for use in a "nuclear reactor", in quantities exceeding 1 kg. 0C004Graphite having a purity level better than 5 parts per million boron equivalent and with a density greater than 1,50 g/cm3 for use in a "nuclear reactor", in quantities exceeding 1 kg. N.B. SEE ALSO 1C107. Note 1: For the purpose of export control, the competent authorities of the EU Member State in which the exporter is established will determine whether or not the exports of graphite meeting the above specifications are for "nuclear reactor" use. 0C004 does not control graphite having a purity level better than 5 ppm (parts per million) boron equivalent and with a density greater than 1,50 g/cm3 not for use in a "nuclear reactor". Note 2: In 0C004, boron equivalent (BE) is defined as the sum of BEz for impurities (excluding BEcarbon since carbon is not considered an impurity) including boron, where: BEZ (ppm) = CF × concentration of element Z in ppm; BEZ (ppm) = CF × concentration of element Z in ppm; where CF is the conversion factor σZABσBAZ and σΒ and σΖ are the thermal neutron capture cross sections (in barns) for naturally occurring boron and element Z respectively; and AB and AZ are the atomic masses of naturally occurring boron and element Z respectively. 0C005Specially prepared compounds or powders for the manufacture of gaseous diffusion barriers, resistant to corrosion by UF6 (e.g. nickel or alloys containing 60 % by weight or more nickel, aluminium oxide and fully fluorinated hydrocarbon polymers), having a purity of 99,9 % by weight or more and a particle size less than 10 μm measured by ASTM B330 standard and a high degree of particle size uniformity. 0C005Specially prepared compounds or powders for the manufacture of gaseous diffusion barriers, resistant to corrosion by UF6 (e.g. nickel or alloys containing 60 % by weight or more nickel, aluminium oxide and fully fluorinated hydrocarbon polymers), having a purity of 99,9 % by weight or more and a particle size less than 10 μm measured by ASTM B330 standard and a high degree of particle size uniformity. 0DSoftware 0D001"Software" specially designed or modified for the "development", "production" or "use" of goods specified in this Category. 0ETechnology 0E001"Technology" according to the Nuclear Technology Note for the "development", "production" or "use" of goods specified in this Category. PART III Category 1 CATEGORY 1 – SPECIAL MATERIALS AND RELATED EQUIPMENT 1ASystems, Equipment and Components 1A001Components made from fluorinated compounds, as follows: a. Seals, gaskets, sealants or fuel bladders, specially designed for "aircraft" or aerospace use, made from more than 50 % by weight of any of the materials specified in 1C009.b. or 1C009.c.; b. Not used; c. Not used. 1A002"Composite" structures or laminates, as follows: N.B. SEE ALSO 1A202, 9A010 and 9A110. a. Made from any of the following: 1. An organic "matrix" and "fibrous or filamentary materials" specified in 1C010.c. or 1C010.d.: or 2. Prepregs or preforms specified in 1C010.e.; b. Made from a metal or carbon "matrix", and any of the following: 1. Carbon "fibrous or filamentary materials" having all of the following: a. A "specific modulus" exceeding 10,15 × 106 m; and b. A "specific tensile strength" exceeding 17,7 × 104 m; or a. A "specific modulus" exceeding 10,15 × 106 m; and b. A "specific tensile strength" exceeding 17,7 × 104 m; or 2. Materials specified in 1C010.c. Note 1: 1A002 does not control "composite" structures or laminates made from epoxy resin impregnated carbon "fibrous or filamentary materials" for the repair of "civil aircraft" structures or laminates, having all of the following: a. An area not exceeding 1 m2; … 39 unchanged lines … c. Detection systems, specially designed or modified for detection or identification of any of the following, and specially designed components therefor: 1. "Biological agents"; 2. Radioactive materials; or 3. Chemical warfare (CW) agents. 3. Chemical warfare (CW) agents; d. Electronic equipment designed for automatically detecting or identifying the presence of "explosives" residues and utilising trace detection techniques (e.g., surface acoustic wave, ion mobility spectrometry, differential mobility spectrometry, mass spectrometry). Technical Note: Trace detection is defined as the capability to detect less than 1 ppm vapour, or 1 mg solid or liquid. … 40 unchanged lines … 4. Exploding foil initiators (EFI). Technical Notes: 1. The word initiator or igniter is sometimes used in place of the word detonator. 2. For the purpose of 1A007.b. the detonators of concern all utilise a small electrical conductor (bridge, bridge wire, or foil) that explosively vaporises when a fast, high-current electrical pulse is passed through it. In non-slapper types, the exploding conductor starts a chemical detonation in a contacting high explosive material such as PETN (pentaerythritoltetranitrate). In slapper detonators, the explosive vaporization of the electrical conductor drives a flyer or slapper across a gap, and the impact of the slapper on an explosive starts a chemical detonation. The slapper in some designs is driven by magnetic force. The term exploding foil detonator may refer to either an EB or a slapper-type detonator. 2. For the purpose of 1A007.b. the detonators of concern all utilise a small electrical conductor (bridge, bridge wire or foil) that explosively vaporises when a fast, high-current electrical pulse is passed through it. In non-slapper types, the exploding conductor starts a chemical detonation in a contacting high explosive material such as PETN (pentaerythritoltetranitrate). In slapper detonators, the explosive vaporization of the electrical conductor drives a flyer or slapper across a gap, and the impact of the slapper on an explosive starts a chemical detonation. The slapper in some designs is driven by magnetic force. The term exploding foil detonator may refer to either an EB or a slapper-type detonator. 1A008Charges, devices and components, as follows: a. Shaped charges having all of the following: 1. Net Explosive Quantity (NEQ) greater than 90 g; and … 79 unchanged lines … Note: 1B115.b. does not control batch mixers, continuous mixers or fluid energy mills. For the control of batch mixers, continuous mixers and fluid energy mills see 1B117, 1B118 and 1B119. Note 1: For equipment specially designed for the production of military goods, see the Military Goods Controls. Note 2: 1B115 does not control equipment for the "production", handling and acceptance testing of boron carbide. 1B116Specially designed nozzles for producing pyrolitically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1573 K (1300 °C) to 3173 K (2900 °C) temperature range at pressures of 130 Pa to 20 kPa. 1B116Specially designed nozzles for producing pyrolitically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1573 K (1300 °C) to 3173 K (2900 °C) temperature range at pressures of 130 Pa to 20 kPa. 1B117Batch mixers having all of the following, and specially designed components therefor: a. Designed or modified for mixing under vacuum in the range of zero to 13,326 kPa: b. Capable of controlling the temperature of the mixing chamber; … 22 unchanged lines … a. Capable of enriching stable isotopes; b. With the ion sources and collectors both in the magnetic field and those configurations in which they are external to the field. 1B228Hydrogen-cryogenic distillation columns having all of the following characteristics: a. Designed for operation with internal temperatures of 35 K (–238 °C) or less; a. Designed for operation with internal temperatures of 35 K (– 238 °C) or less; b. Designed for operation at an internal pressure of 0,5 to 5 MPa; c. Constructed of either: 1. Stainless steel of the Society of Automotive Engineers International (SAE) 300 series with low sulphur content and with an austenitic ASTM (or equivalent standard) grain size number of 5 or greater; or 2. Equivalent materials which are both cryogenic and hydrogen (H2)-compatible; and d. With internal diameters of 30 cm or greater and effective lengths of 4 m or greater. Technical Note: In 1B228 effective length means the active height of packing material in a packed-type column, or the active height of internal contactor plates in a plate-type column. 1B230Pumps capable of circulating solutions of concentrated or dilute potassium amide catalyst in liquid ammonia (KNH2/NH3), having all of the following characteristics: a. Airtight (i.e., hermetically sealed); b. A capacity greater than 8,5 m3/h; and c. Either of the following characteristics: 1. For concentrated potassium amide solutions (1 % or greater), an operating pressure of 1,5 to 60 MPa; or 2. For dilute potassium amide solutions (less than 1 %), an operating pressure of 20 to 60 MPa. 2. For dilute potassium amide solutions (less than 1 %), an operating pressure of 20 to 60 MPa. 1B231Tritium facilities or plants, and equipment therefor, as follows: a. Facilities or plants for the production, recovery, extraction, concentration, or handling of tritium; b. Equipment for tritium facilities or plants, as follows: 1. Hydrogen or helium refrigeration units capable of cooling to 23 K (–250 °C) or less, with heat removal capacity greater than 150 W; 1. Hydrogen or helium refrigeration units capable of cooling to 23 K (– 250 °C) or less, with heat removal capacity greater than 150 W; 2. Hydrogen isotope storage or hydrogen isotope purification systems using metal hydrides as the storage or purification medium. 1B232Turboexpanders or turboexpander-compressor sets having both of the following characteristics: a. Designed for operation with an outlet temperature of 35 K (–238 °C) or less; and a. Designed for operation with an outlet temperature of 35 K (– 238 °C) or less; and b. Designed for a throughput of hydrogen gas of 1000 kg/h or greater. 1B233Lithium isotope separation facilities or plants, and systems and equipment therefor, as follows: a. Facilities or plants for the separation of lithium isotopes; … 25 unchanged lines … The object of the control should not be defeated by the export of non-listed forms alleged to be finished products but representing in reality crude forms or semi-fabricated forms. 1C001Materials specially designed for absorbing electromagnetic radiation, or intrinsically conductive polymers, as follows: N.B. SEE ALSO 1C101. a. Materials for absorbing frequencies exceeding 2 × 108 Hz but less than 3 × 1012 Hz; a. Materials for absorbing frequencies exceeding 2 × 108 Hz but less than 3 × 1012 Hz; Note 1: 1C001.a. does not control: a. Hair type absorbers, constructed of natural or synthetic fibres, with non-magnetic loading to provide absorption; b. Absorbers having no magnetic loss and whose incident surface is non-planar in shape, including pyramids, cones, wedges and convoluted surfaces; c. Planar absorbers, having all of the following: 1. Made from any of the following: a. Plastic foam materials (flexible or non-flexible) with carbon-loading, or organic materials, including binders, providing more than 5 % echo compared with metal over a bandwidth exceeding ±15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 450 K (177 °C); or b. Ceramic materials providing more than 20 % echo compared with metal over a bandwidth exceeding ±15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 800 K (527 °C); a. Plastic foam materials (flexible or non-flexible) with carbon-loading, or organic materials, including binders, providing more than 5 % echo compared with metal over a bandwidth exceeding ± 15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 450 K (177 °C); or b. Ceramic materials providing more than 20 % echo compared with metal over a bandwidth exceeding ± 15 % of the centre frequency of the incident energy, and not capable of withstanding temperatures exceeding 800 K (527 °C); Technical Note: Absorption test samples for 1C001.a. Note: 1.c.1. should be a square at least 5 wavelengths of the centre frequency on a side and positioned in the far field of the radiating element. 2. Tensile strength less than 7 × 106 N/m2; and 3. Compressive strength less than 14 × 106 N/m2; Absorption test samples for 1C001.a. Note: 1.c.1. should be a square at least 5 wavelengths of the centre frequency on a side and positioned in the far field of the radiating element. 2. Tensile strength less than 7 × 106 N/m2; and 3. Compressive strength less than 14 × 106 N/m2; d. Planar absorbers made of sintered ferrite, having all of the following: 1. A specific gravity exceeding 4,4; and 2. A maximum operating temperature of 548 K (275 °C) or less; 2. A maximum operating temperature of 548 K (275 °C) or less; e. Planar absorbers having no magnetic loss and fabricated from open-cell foam plastic material with a density of 0,15 g/cm3 or less. Technical Note: Open-cell foams are flexible and porous materials, having an inner structure open to the atmosphere. Open-cell foams are also known as reticulated foams. Note 2: Nothing in Note 1 to 1C001.a. releases magnetic materials to provide absorption when contained in paint. b. Materials not transparent to visible light and specially designed for absorbing near-infrared radiation having a wavelength exceeding 810 nm but less than 2000 nm (frequencies exceeding 150 THz but less than 370 THz); Note: 1C001.b. does not control materials, specially designed or formulated for any of the following applications: a. "Laser" marking of polymers; or b. "Laser" welding of polymers. c. Intrinsically conductive polymeric materials with a bulk electrical conductivity exceeding 10000 S/m (Siemens per metre) or a sheet (surface) resistivity of less than 100 ohms/square, based on any of the following polymers: c. Intrinsically conductive polymeric materials with a bulk electrical conductivity exceeding 10000 S/m (Siemens per metre) or a sheet (surface) resistivity of less than 100 ohms/square, based on any of the following polymers: 1. Polyaniline; 2. Polypyrrole; 3. Polythiophene; 4. Poly phenylene-vinylene; or 5. Poly thienylene-vinylene. Note: 1C001.c. does not control materials in a liquid form. Technical Note: Bulk electrical conductivity and sheet (surface) resistivity should be determined using ASTM D-257 or national equivalents. 1C002Metal alloys, metal alloy powder and alloyed materials, as follows: N.B. SEE ALSO 1C202. Note: 1C002 does not control metal alloys, metal alloy powder and alloyed materials, specially formulated for coating purposes. Technical Notes: 1. The metal alloys in 1C002 are those containing a higher percentage by weight of the stated metal than of any other element. 2. Stress-rupture life should be measured in accordance with ASTM standard E-139 or national equivalents. 3. Low cycle fatigue life should be measured in accordance with ASTM standard E-606 Recommended Practice for Constant-Amplitude Low-Cycle Fatigue Testing or national equivalents. Testing should be axial with an average stress ratio equal to 1 and a stress-concentration factor (Kt) equal to 1. The average stress ratio is defined as maximum stress minus minimum stress divided by maximum stress. a. Aluminides, as follows: 1. Nickel aluminides containing a minimum of 15 % by weight aluminium, a maximum of 38 % by weight aluminium and at least one additional alloying element; 2. Titanium aluminides containing 10 % by weight or more aluminium and at least one additional alloying element; b. Metal alloys, as follows, made from the powder or particulate material specified in 1C002.c.: 1. Nickel alloys having any of the following: a. A stress-rupture life of 10000 hours or longer at 923 K (650 °C) at a stress of 676 MPa; or b. A low cycle fatigue life of 10000 cycles or more at 823 K (550 °C) at a maximum stress of 1095 MPa; a. A stress-rupture life of 10000 hours or longer at 923 K (650 °C) at a stress of 676 MPa; or b. A low cycle fatigue life of 10000 cycles or more at 823 K (550 °C) at a maximum stress of 1095 MPa; 2. Niobium alloys having any of the following: a. A stress-rupture life of 10000 hours or longer at 1073 K (800 °C) at a stress of 400 MPa; or b. A low cycle fatigue life of 10000 cycles or more at 973 K (700 °C) at a maximum stress of 700 MPa; a. A stress-rupture life of 10000 hours or longer at 1073 K (800 °C) at a stress of 400 MPa; or b. A low cycle fatigue life of 10000 cycles or more at 973 K (700 °C) at a maximum stress of 700 MPa; 3. Titanium alloys having any of the following: a. A stress-rupture life of 10000 hours or longer at 723 K (450 °C) at a stress of 200 MPa; or b. A low cycle fatigue life of 10000 cycles or more at 723 K (450 °C) at a maximum stress of 400 MPa; a. A stress-rupture life of 10000 hours or longer at 723 K (450 °C) at a stress of 200 MPa; or b. A low cycle fatigue life of 10000 cycles or more at 723 K (450 °C) at a maximum stress of 400 MPa; 4. Aluminium alloys having any of the following: a. A tensile strength of 240 MPa or more at 473 K (200 °C); or b. A tensile strength of 415 MPa or more at 298 K (25 °C); a. A tensile strength of 240 MPa or more at 473 K (200 °C); or b. A tensile strength of 415 MPa or more at 298 K (25 °C); 5. Magnesium alloys having all of the following: a. A tensile strength of 345 MPa or more; and a. A tensile strength of 345 MPa or more; and b. A corrosion rate of less than 1 mm/year in 3 % sodium chloride aqueous solution measured in accordance with ASTM standard G-31 or national equivalents; c. Metal alloy powder or particulate material, having all of the following: 1. Made from any of the following composition systems: Technical Note: X in the following equals one or more alloying elements. a. Nickel alloys (Ni-Al-X, Ni-X-Al) qualified for turbine engine parts or components, i.e. with less than 3 non-metallic particles (introduced during the manufacturing process) larger than 100 μm in 109 alloy particles; a. Nickel alloys (Ni-Al-X, Ni-X-Al) qualified for turbine engine parts or components, i.e. with less than 3 non-metallic particles (introduced during the manufacturing process) larger than 100 μm in 109 alloy particles; b. Niobium alloys (Nb-Al-X or Nb-X-Al, Nb-Si-X or Nb-X-Si, Nb-Ti-X or Nb-X-Ti); c. Titanium alloys (Ti-Al-X or Ti-X-Al); d. Aluminium alloys (Al-Mg-X or Al-X-Mg, Al-Zn-X or Al-X-Zn, Al-Fe-X or Al-X-Fe); or … 31 unchanged lines … Technical Note: Measurement of initial relative permeability must be performed on fully annealed materials. b. Magnetostrictive alloys having any of the following: 1. A saturation magnetostriction of more than 5 × 10–4; or 1. A saturation magnetostriction of more than 5 × 10–4; or 2. A magnetomechanical coupling factor (k) of more than 0,8; or c. Amorphous or nanocrystalline alloy strips, having all of the following: 1. A composition having a minimum of 75 % by weight of iron, cobalt or nickel; 2. A saturation magnetic induction (Bs) of 1,6 T or more; and 2. A saturation magnetic induction (Bs) of 1,6 T or more; and 3. Any of the following: a. A strip thickness of 0,02 mm or less; or b. An electrical resistivity of 2 × 10–4 ohm cm or more. b. An electrical resistivity of 2 × 10–4 ohm cm or more. Technical Note: Nanocrystalline materials in 1C003.c. are those materials having a crystal grain size of 50 nm or less, as determined by X-ray diffraction. 1C004Uranium titanium alloys or tungsten alloys with a "matrix" based on iron, nickel or copper, having all of the following: a. A density exceeding 17,5 g/cm3; b. An elastic limit exceeding 880 MPa; c. An ultimate tensile strength exceeding 1270 MPa; and b. An elastic limit exceeding 880 MPa; c. An ultimate tensile strength exceeding 1270 MPa; and d. An elongation exceeding 8 %. 1C005"Superconductive" "composite" conductors in lengths exceeding 100 m or with a mass exceeding 100 g, as follows: a. "Superconductive" "composite" conductors containing one or more niobium-titanium filaments, having all of the following: 1. Embedded in a "matrix" other than a copper or copper-based mixed "matrix"; and 2. Having a cross-section area less than 0,28 × 10–4 mm2 (6 μm in diameter for circular filaments); 2. Having a cross-section area less than 0,28 × 10-4 mm2 (6 μm in diameter for circular filaments); b. "Superconductive" "composite" conductors consisting of one or more "superconductive" filaments other than niobium-titanium, having all of the following: 1. A "critical temperature" at zero magnetic induction exceeding 9,85 K (–263,31 °C); and 2. Remaining in the "superconductive" state at a temperature of 4,2 K (–268,96 °C) when exposed to a magnetic field oriented in any direction perpendicular to the longitudinal axis of conductor and corresponding to a magnetic induction of 12 T with critical current density exceeding 1750 A/mm2 on overall cross-section of the conductor; c. "Superconductive" "composite" conductors consisting of one or more "superconductive" filaments which remain "superconductive" above 115 K (–158,16 °C). 1. A "critical temperature" at zero magnetic induction exceeding 9,85 K (– 263,31 °C); and 2. Remaining in the "superconductive" state at a temperature of 4,2 K (– 268,96 °C) when exposed to a magnetic field oriented in any direction perpendicular to the longitudinal axis of conductor and corresponding to a magnetic induction of 12 T with critical current density exceeding 1750 A/mm2 on overall cross-section of the conductor; c. "Superconductive" "composite" conductors consisting of one or more "superconductive" filaments which remain "superconductive" above 115 K (– 158,16 °C). Technical Note: For the purpose of 1C005 filaments may be in wire, cylinder, film, tape or ribbon form. 1C006Fluids and lubricating materials, as follows: a. Not used; b. Lubricating materials containing, as their principal ingredients, any of the following: 1. Phenylene or alkylphenylene ethers or thio-ethers, or their mixtures, containing more than two ether or thio-ether functions or mixtures thereof; or 2. Fluorinated silicone fluids with a kinematic viscosity of less than 5000 mm2/s (5000 centistokes) measured at 298 K (25 °C); b. Lubricating materials containing, as their principal ingredients, phenylene or alkylphenylene ethers or thio-ethers, or their mixtures, containing more than two ether or thio-ether functions or mixtures thereof; c. Damping or flotation fluids having all of the following: 1. Purity exceeding 99,8 %; 2. Containing less than 25 particles of 200 μm or larger in size per 100 ml; and 2. Containing less than 25 particles of 200 μm or larger in size per 100 ml; and 3. Made from at least 85 % of any of the following: a. Dibromotetrafluoroethane (CAS 25497-30-7, 124-73-2, 27336-23-8); b. Polychlorotrifluoroethylene (oily and waxy modifications only); or c. Polybromotrifluoroethylene; d. Fluorocarbon fluids designed for electronic cooling and having all of the following: 1. Containing 85 % by weight or more of any of the following, or mixtures thereof: a. Monomeric forms of perfluoropolyalkylether-triazines or perfluoroaliphatic-ethers; b. Perfluoroalkylamines; c. Perfluorocycloalkanes; or d. Perfluoroalkanes; 2. Density at 298 K (25 °C) of 1,5 g/ml or more; 3. In a liquid state at 273 K (0 °C); and 2. Density at 298 K (25 °C) of 1,5 g/ml or more; 3. In a liquid state at 273 K (0 °C); and 4. Containing 60 % or more by weight of fluorine. Note: 1C006.d. does not control materials specified and packaged as medical products. 1C007Ceramic powders, ceramic-"matrix" "composite" materials and precursor materials, as follows: N.B. SEE ALSO 1C107. a. Ceramic powders of titanium diboride (TiB2) (CAS 12045-63-5) having total metallic impurities, excluding intentional additions, of less than 5000 ppm, an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm; a. Ceramic powders of titanium diboride (TiB2) (CAS 12045-63-5) having total metallic impurities, excluding intentional additions, of less than 5000 ppm, an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm; b. Not used; c. Ceramic-"matrix" "composite" materials as follows: 1. Ceramic-ceramic "composite" materials with a glass or oxide-"matrix" and reinforced with any of the following: a. Continuous fibres made from any of the following materials: 1. Al2O3 (CAS 1344-28-1); or 2. Si-C-N; or Note: 1C007.c.1.a. does not control "composites" containing fibres with a tensile strength of less than 700 MPa at 1273 K (1000 °C) or tensile creep resistance of more than 1 % creep strain at 100 MPa load and 1273 K (1000 °C) for 100 hours. b. Fibres being all of the following: 1. Made from any of the following materials: a. Si-N; b. Si-C; c. Si-Al-O-N; or d. Si-O-N; and 2. Having a "specific tensile strength" exceeding 12,7 × 103m; 2. Having a "specific tensile strength" exceeding 12,7 × 103m; 2. Ceramic matrix "composite" materials, with a "matrix" formed of carbides or nitrides of silicon, zirconium or boron; d. Not used; e. Precursor materials specially designed for the "production" of materials specified in 1C007.c., as follows: 1. Polydiorganosilanes; 2. Polysilazanes; 3. Polycarbosilazanes; f. Not used. Technical Note: For the purposes of 1C007, precursor materials are special purpose polymeric or metallo-organic materials used for the "production" of silicon carbide, silicon nitride, or ceramics with silicon, carbon and nitrogen. 1C008Non-fluorinated polymeric substances as follows: a. Imides, as follows: 1. Bismaleimides; 2. Aromatic polyamide-imides (PAI) having a glass transition temperature (Tg) exceeding 563 K (290 °C); 3. Aromatic polyimides having a glass transition temperature (Tg) exceeding 505 K (232 °C); 4. Aromatic polyetherimides having a glass transition temperature (Tg) exceeding 563 K (290 °C); 4. Aromatic polyetherimides having a glass transition temperature (Tg) exceeding 563 K (290 °C); Note: 1C008.a. controls substances in liquid or solid "fusible" form, including resin, powder, pellet, film, sheet, tape or ribbon. N.B. For non-"fusible" aromatic polyimides in film, sheet, tape or ribbon form, see 1A003. b. Not used; c. Not used; d. Polyarylene ketones; e. Polyarylene sulphides, where the arylene group is biphenylene, triphenylene or combinations thereof; f. Polybiphenylenethersulphone having a glass transition temperature (Tg) exceeding 563 K (290 °C). f. Polybiphenylenethersulphone having a glass transition temperature (Tg) exceeding 563 K (290 °C). Technical Notes: 1. The glass transition temperature (Tg) for 1C008.a.2. thermoplastic materials, 1C008.a.4. materials and 1C008.f. materials is determined using the method described in ISO 11357-2:1999 or national equivalents 2. The glass transition temperature (Tg) for 1C008.a.2. thermosetting materials and 1C008.a.3. materials is determined using the 3-point bend method described in ASTM D 7028-07 or equivalent national standard. The test is to be performed using a dry test specimen which has attained a minimum of 90 % degree of cure as specified by ASTM E 2160-04 or equivalent national standard, and was cured using the combination of standard- and post-cure processes that yield the highest Tg. 2. The glass transition temperature (Tg) for 1C008.a.2. thermosetting materials and 1C008.a.3. materials is determined using the 3-point bend method described in ASTM D 7028-07 or equivalent national standard. The test is to be performed using a dry test specimen which has attained a minimum of 90 % degree of cure as specified by ASTM E 2160-04 or equivalent national standard, and was cured using the combination of standard- and post-cure processes that yield the highest Tg. 1C009Unprocessed fluorinated compounds as follows: a. Not used; b. Fluorinated polyimides containing 10 % by weight or more of combined fluorine; c. Fluorinated phosphazene elastomers containing 30 % by weight or more of combined fluorine. 1C010"Fibrous or filamentary materials", as follows: N.B. SEE ALSO 1C210 AND 9C110. Technical Notes: 1. For the purpose of calculating "specific tensile strength", "specific modulus" or specific weight of "fibrous or filamentary materials" in 1C010.a., 1C010.b., 1C010.c. or 1C010.e.1.b., the tensile strength and modulus should be determined by using Method A described in ISO 10618:2004 or national equivalents. 1. For the purpose of calculating "specific tensile strength", "specific modulus" or specific weight of "fibrous or filamentary materials" in 1C010.a., 1C010.b., 1C010.c. or 1C010.e.1.b., the tensile strength and modulus should be determined by using Method A described in ISO 10618:2004 or national equivalents. 2. Assessing the "specific tensile strength", "specific modulus" or specific weight of non-unidirectional "fibrous or filamentary materials" (e.g., fabrics, random mats or braids) in 1C010 is to be based on the mechanical properties of the constituent unidirectional monofilaments (e.g., monofilaments, yarns, rovings or tows) prior to processing into the non-unidirectional "fibrous or filamentary materials". a. Organic "fibrous or filamentary materials", having all of the following: 1. "Specific modulus" exceeding 12,7 × 106 m; and 2. "Specific tensile strength" exceeding 23,5 × 104 m; 1. "Specific modulus" exceeding 12,7 × 106 m; and 2. "Specific tensile strength" exceeding 23,5 × 104 m; Note: 1C010.a. does not control polyethylene. b. Carbon "fibrous or filamentary materials", having all of the following: 1. "Specific modulus" exceeding 14,65 × 106 m; and 2. "Specific tensile strength" exceeding 26,82 × 104 m; 1. "Specific modulus" exceeding 14,65 × 106 m; and 2. "Specific tensile strength" exceeding 26,82 × 104 m; Note: 1C010.b. does not control: a. "Fibrous or filamentary materials", for the repair of "civil aircraft" structures or laminates, having all of the following: 1. An area not exceeding 1 m2; 2. A length not exceeding 2,5 m; and 3. A width exceeding 15 mm. b. Mechanically chopped, milled or cut carbon "fibrous or filamentary materials" 25,0 mm or less in length. c. Inorganic "fibrous or filamentary materials", having all of the following: 1. Having any of the following: a. Composed of 50 % or more by weight silicon dioxide and having a "specific modulus" exceeding 2,54 × 106 m; or b. Not specified in 1C010.c.1.a. and having a "specific modulus" exceeding 5,6 × 106 m; and 2. Melting, softening, decomposition or sublimation point exceeding 1922 K (1649 °C) in an inert environment; a. Composed of 50 % or more by weight silicon dioxide and having a "specific modulus" exceeding 2,54 × 106 m; or b. Not specified in 1C010.c.1.a. and having a "specific modulus" exceeding 5,6 × 106 m; and 2. Melting, softening, decomposition or sublimation point exceeding 1922 K (1649 °C) in an inert environment; Note: 1C010.c. does not control: a. Discontinuous, multiphase, polycrystalline alumina fibres in chopped fibre or random mat form, containing 3 % by weight or more silica, with a "specific modulus" of less than 10 × 106 m; a. Discontinuous, multiphase, polycrystalline alumina fibres in chopped fibre or random mat form, containing 3 % by weight or more silica, with a "specific modulus" of less than 10 × 106 m; b. Molybdenum and molybdenum alloy fibres; c. Boron fibres; d. Discontinuous ceramic fibres with a melting, softening, decomposition or sublimation point lower than 2043 K (1770 °C) in an inert environment. d. Discontinuous ceramic fibres with a melting, softening, decomposition or sublimation point lower than 2043 K (1770 °C) in an inert environment. d. "Fibrous or filamentary materials", having any of the following: 1. Composed of any of the following: a. Polyetherimides specified in 1C008.a.; or b. Materials specified in 1C008.d. to 1C008.f.; or 2. Composed of materials specified in 1C010.d.1.a. or 1C010.d.1.b. and commingled with other fibres specified in 1C010.a., 1C010.b. or 1C010.c.; Technical Note: Commingled is filament to filament blending of thermoplastic fibres and reinforcement fibres in order to produce a fibre reinforcement "matrix" mix in total fibre form. e. Fully or partially resin-impregnated or pitch-impregnated "fibrous or filamentary materials" (prepregs), metal or carbon-coated "fibrous or filamentary materials" (preforms) or carbon fibre preforms, having all of the following: 1. Having any of the following: a. Inorganic "fibrous or filamentary materials" specified in 1C010.c.; or b. Organic or carbon "fibrous or filamentary materials", having all of the following: 1. "Specific modulus" exceeding 10,15 × 106 m; and 2. "Specific tensile strength" exceeding 17,7 × 104 m; and 1. "Specific modulus" exceeding 10,15 × 106 m; and 2. "Specific tensile strength" exceeding 17,7 × 104 m; and 2. Having any of the following: a. Resin or pitch, specified in 1C008 or 1C009.b.; b. Dynamic Mechanical Analysis glass transition temperature (DMA Tg) equal to or exceeding 453 K (180 °C) and having a phenolic resin; or c. Dynamic Mechanical Analysis glass transition temperature (DMA Tg) equal to or exceeding 505 K (232 °C) and having a resin or pitch, not specified in 1C008 or 1C009.b., and not being a phenolic resin; Note 1: Metal or carbon-coated "fibrous or filamentary materials" (preforms) or carbon fibre preforms, not impregnated with resin or pitch, are specified by "fibrous or filamentary materials" in 1C010.a., 1C010.b. or 1C010.c. Note 2: 1C010.e. does not control: a. Epoxy resin "matrix" impregnated carbon "fibrous or filamentary materials" (prepregs) for the repair of "civil aircraft" structures or laminates, having all the following; 1. An area not exceeding 1 m2; 2. A length not exceeding 2,5 m; and 3. A width exceeding 15 mm. b. Fully or partially resin-impregnated or pitch-impregnated mechanically chopped, milled or cut carbon "fibrous or filamentary materials" 25,0 mm or less in length when using a resin or pitch other than those specified in 1C008 or 1C009.b. Technical Notes: 1. Carbon fibre preforms are an ordered arrangement of uncoated or coated fibres intended to constitute a framework of a part before the "matrix" is introduced to form a "composite". 2. The Dynamic Mechanical Analysis glass transition temperature (DMA Tg) for materials specified in 1C010.e. is determined using the method described in ASTM D 7028-07, or equivalent national standard, on a dry test specimen. In the case of thermoset materials, degree of cure of a dry test specimen shall be a minimum of 90 % as defined by ASTM E 2160-04 or equivalent national standard. 2. The Dynamic Mechanical Analysis glass transition temperature (DMA Tg) for materials specified in 1C010.e. is determined using the method described in ASTM D 7028-07, or equivalent national standard, on a dry test specimen. In the case of thermoset materials, degree of cure of a dry test specimen shall be a minimum of 90 % as defined by ASTM E 2160-04 or equivalent national standard. 1C011Metals and compounds, as follows: N.B. SEE ALSO MILITARY GOODS CONTROLS AND 1C111. a. Metals in particle sizes of less than 60 μm whether spherical, atomised, spheroidal, flaked or ground, manufactured from material consisting of 99 % or more of zirconium, magnesium and alloys thereof; a. Metals in particle sizes of less than 60 μm whether spherical, atomised, spheroidal, flaked or ground, manufactured from material consisting of 99 % or more of zirconium, magnesium and alloys thereof; Technical Note: The natural content of hafnium in the zirconium (typically 2 % to 7 %) is counted with the zirconium. Note: The metals or alloys specified in 1C011.a. are controlled whether or not the metals or alloys are encapsulated in aluminium, magnesium, zirconium or beryllium. … 22 unchanged lines … In 1C101 missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. 1C102Resaturated pyrolised carbon-carbon materials designed for space launch vehicles specified in 9A004 or sounding rockets specified in 9A104. 1C107Graphite and ceramic materials, other than those specified in 1C007, as follows: a. Fine grain graphites with a bulk density of 1,72 g/cm3 or greater, measured at 288 K (15 °C), and having a grain size of 100 μm or less, usable for rocket nozzles and re-entry vehicle nose tips, which can be machined to any of the following products: a. Fine grain graphites with a bulk density of 1,72 g/cm3 or greater, measured at 288 K (15 °C), and having a grain size of 100 μm or less, usable for rocket nozzles and re-entry vehicle nose tips, which can be machined to any of the following products: 1. Cylinders having a diameter of 120 mm or greater and a length of 50 mm or greater; 2. Tubes having an inner diameter of 65 mm or greater and a wall thickness of 25 mm or greater and a length of 50 mm or greater; or 3. Blocks having a size of 120 mm × 120 mm × 50 mm or greater; 3. Blocks having a size of 120 mm × 120 mm × 50 mm or greater; N.B. See also 0C004. b. Pyrolytic or fibrous reinforced graphites, usable for rocket nozzles and reentry vehicle nose tips usable in "missiles", space launch vehicles specified in 9A004 or sounding rockets specified in 9A104; N.B. See also 0C004. … 18 unchanged lines … 10. Tantalum carbide (TaC). 1C111Propellants and constituent chemicals for propellants, other than those specified in 1C011, as follows: a. Propulsive substances: 1. Spherical or spheroidal aluminium powder other than that specified in the Military Goods Controls, in particle size of less than 200 μm and an aluminium content of 97 % by weight or more, if at least 10 % of the total weight is made up of particles of less than 63 μm, according to ISO 2591-1:1988 or national equivalents; 1. Spherical or spheroidal aluminium powder other than that specified in the Military Goods Controls, in particle size of less than 200 μm and an aluminium content of 97 % by weight or more, if at least 10 % of the total weight is made up of particles of less than 63 μm, according to ISO 2591-1:1988 or national equivalents; Technical Note: A particle size of 63 μm (ISO R-565) corresponds to 250 mesh (Tyler) or 230 mesh (ASTM standard E-11). A particle size of 63 μm (ISO R-565) corresponds to 250 mesh (Tyler) or 230 mesh (ASTM standard E-11). 2. Metal powders, other than that specified in the Military Goods Controls, as follows: a. Metal powders of zirconium, beryllium or magnesium, or alloys of these metals, if at least 90 % of the total particles by particle volume or weight are made up of particles of less than 60 μm (determined by measurement techniques such as using a sieve, laser diffraction or optical scanning), whether spherical, atomised, spheroidal, flaked or ground, consisting 97 % by weight or more of any of the following: a. Metal powders of zirconium, beryllium or magnesium, or alloys of these metals, if at least 90 % of the total particles by particle volume or weight are made up of particles of less than 60 μm (determined by measurement techniques such as using a sieve, laser diffraction or optical scanning), whether spherical, atomised, spheroidal, flaked or ground, consisting 97 % by weight or more of any of the following: 1. Zirconium; 2. Beryllium; or 3. Magnesium; Technical Note: The natural content of hafnium in the zirconium (typically 2 % to 7 %) is counted with the zirconium. b. Metal powders of either boron or boron alloys with a boron content of 85 % or more by weight, if at least 90 % of the total particles by particle volume or weight are made up of particles of less than 60 μm (determined by measurement techniques such as using a sieve, laser diffraction or optical scanning), whether spherical, atomised, spheroidal, flaked or ground; Note: 1C111a.2.a. and 1C111a.2.b. controls powder mixtures with a multimodal particle distribution (e.g. mixtures of different grain sizes) if one or more modes are controlled. 3. Oxidiser substances usable in liquid propellant rocket engines as follows: a. Dinitrogen trioxide (CAS 10544-73-7); b. Nitrogen dioxide (CAS 10102-44-0)/dinitrogen tetroxide (CAS 10544-72-6); c. Dinitrogen pentoxide (CAS 10102-03-1); d. Mixed Oxides of Nitrogen (MON); Technical Note: Mixed Oxides of Nitrogen (MON) are solutions of Nitric Oxide (NO) in Dinitrogen Tetroxide/Nitrogen Dioxide (N2O4/NO2) that can be used in missile systems. There are a range of compositions that can be denoted as MONi or MONij, where i and j are integers representing the percentage of Nitric Oxide in the mixture (e.g., MON3 contains 3 % Nitric Oxide, MON25 25 % Nitric Oxide. An upper limit is MON40, 40 % by weight). Mixed Oxides of Nitrogen (MON) are solutions of Nitric Oxide (NO) in Dinitrogen Tetroxide/Nitrogen Dioxide (N2O4/NO2 ) that can be used in missile systems. There are a range of compositions that can be denoted as MONi or MONij, where i and j are integers representing the percentage of Nitric Oxide in the mixture (e.g., MON3 contains 3 % Nitric Oxide, MON25 25 % Nitric Oxide. An upper limit is MON40, 40 % by weight). e. SEE MILITARY GOODS CONTROLS FOR Inhibited Red Fuming Nitric Acid (IRFNA); f. SEE MILITARY GOODS CONTROLS AND 1C238 FOR compounds composed of fluorine and one or more of other halogens, oxygen or nitrogen. 4. Hydrazine derivatives as follows: N.B. SEE ALSO MILITARY GOODS CONTROLS. a. Trimethylhydrazine (CAS 1741-01-1); b. Tetramethylhydrazine (CAS 6415-12-9); c. N,N-Diallylhydrazine (CAS 5164-11-4); d. Allylhydrazine (CAS 7422-78-8); e. Ethylene dihydrazine (CAS 6068-98-0); f. Monomethylhydrazine dinitrate; g. Unsymmetrical dimethylhydrazine nitrate; h. Hydrazinium azide (CAS 14546-44-2); i. 1,1-Dimethylhydrazinium azide (CAS 227955-52-4)/1,2-Dimethylhydrazinium azide (CAS 299177-50-7); i. 1,1-Dimethylhydrazinium azide (CAS 227955-52-4) / 1,2-Dimethylhydrazinium azide (CAS 299177-50-7); j. Hydrazinium dinitrate (CAS 13464-98-7); k. Diimido oxalic acid dihydrazine (CAS 3457-37-2); l. 2-hydroxyethylhydrazine nitrate (HEHN); m. See Military Goods Controls for Hydrazinium perchlorate; n. Hydrazinium diperchlorate (CAS 13812-39-0); o. Methylhydrazine nitrate (MHN) (CAS 29674-96-2); p. 1,1-Diethylhydrazine nitrate (DEHN)/1,2-Diethylhydrazine nitrate (DEHN) (CAS 363453-17-2); p. 1,1-Diethylhydrazine nitrate (DEHN) / 1,2-Diethylhydrazine nitrate (DEHN) (CAS 363453-17-2); q. 3,6-Dihydrazino tetrazine nitrate (1,4-dihydrazine nitrate) (DHTN); 5. High energy density materials, other than that specified in the Military Goods Controls, usable in missiles or unmanned aerial vehicles specified in 9A012 or 9A112.a.; a. Mixed fuel that incorporate both solid and liquid fuels, such as boron slurry, having a mass-based energy density of 40 × 106 J/kg or greater; b. Other high energy density fuels and fuel additives (e.g., cubane, ionic solutions, JP-10) having a volume-based energy density of 37,5 × 109 J/m3 or greater, measured at 20 °C and one atmosphere (101,325 kPa) pressure; Note: 1C111.a.5.b. does not control fossil refined fuels and biofuels produced from vegetables, including fuels for engines certified for use in civil aviation, unless specially formulated for missiles or unmanned aerial vehicles specified in 9A012 or 9A112.a. a. Mixed fuel that incorporate both solid and liquid fuels, such as boron slurry, having a mass-based energy density of 40 × 106 J/kg or greater; b. Other high energy density fuels and fuel additives (e.g., cubane, ionic solutions, JP-10) having a volume-based energy density of 37,5 × 109 J/m3 or greater, measured at 20 °C and one atmosphere (101,325 kPa) pressure; Note: 1C111.a.5.b. does not control fossil refined fuels and biofuels produced from vegetables, including fuels for engines certified for use in civil aviation, unless specially formulated for missiles or unmanned aerial vehicles specified in 9A012 or 9A112.a.. Technical Note: In 1C111.a.5. missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. 6. Hydrazine replacement fuels as follows: a. 2-Dimethylaminoethylazide (DMAZ) (CAS 86147-04-8); b. Polymeric substances: 1. Carboxy-terminated polybutadiene (including carboxyl-terminated polybutadiene) (CTPB); 2. Hydroxy-terminated polybutadiene (including hydroxyl-terminated polybutadiene) (HTPB) (CAS 69102-90-5), other than that specified in the Military Goods Controls; 3. Polybutadiene-acrylic acid (PBAA); 4. Polybutadiene-acrylic acid-acrylonitrile (PBAN) (CAS 25265-19-4/CAS 68891-50-9); 4. Polybutadiene-acrylic acid-acrylonitrile (PBAN) (CAS 25265-19-4 / CAS 68891-50-9); 5. Polytetrahydrofuran polyethylene glycol (TPEG); Technical Note: Polytetrahydrofuran polyethylene glycol (TPEG) is a block co-polymer of poly 1,4-Butanediol (CAS 110-63-4) and polyethylene glycol (PEG) (CAS 25322-68-3). … 16 unchanged lines … i. SEE MILITARY GOODS CONTROLS FOR Dipropyl ferrocene; j. SEE MILITARY GOODS CONTROLS FOR Dibutyl ferrocene (CAS 1274-08-4); k. SEE MILITARY GOODS CONTROLS FOR Dihexyl ferrocene (CAS 93894-59-8); l. SEE MILITARY GOODS CONTROLS FOR Acetyl ferrocene (CAS 1271-55-2)/1,1'-diacetyl ferrocene (CAS 1273-94-5); m. SEE MILITARY GOODS CONTROLS FOR Ferrocene carboxylic acid (CAS 1271-42-7)/1,1'-Ferrocenedicarboxylic acid (CAS 1293-87-4); l. SEE MILITARY GOODS CONTROLS FOR Acetyl ferrocene (CAS 1271-55-2) / 1,1'-diacetyl ferrocene (CAS 1273-94-5); m. SEE MILITARY GOODS CONTROLS FOR Ferrocene carboxylic acid (CAS 1271-42-7) / 1,1'-Ferrocenedicarboxylic acid (CAS 1293-87-4); n. SEE MILITARY GOODS CONTROLS FOR butacene (CAS 125856-62-4); o. Other ferrocene derivatives usable as rocket propellant burning rate modifiers, other than those specified in the Military Goods Controls. Note: 1C111.c.6.o. does not control ferrocene derivatives that contain a six carbon aromatic functional group attached to the ferrocene molecule. … 18 unchanged lines … Technical Note 2: In 1C116 missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. 1C117Materials for the fabrication of missiles components as follows: a. Tungsten and alloys in particulate form with a tungsten content of 97 % by weight or more and a particle size of 50 × 10–6 m (50 μm) or less; b. Molybdenum and alloys in particulate form with a molybdenum content of 97 % by weight or more and a particle size of 50 × 10–6 m (50 μm) or less; a. Tungsten and alloys in particulate form with a tungsten content of 97 % by weight or more and a particle size of 50 × 10-6 m (50 μm) or less; b. Molybdenum and alloys in particulate form with a molybdenum content of 97 % by weight or more and a particle size of 50 × 10-6 m (50 μm) or less; c. Tungsten materials in solid form having all of the following: 1. Any of the following material compositions: a. Tungsten and alloys containing 97 % by weight or more of tungsten; … 25 unchanged lines … The phrase alloys capable of encompasses alloys before or after heat treatment. 1C210Fibrous or filamentary materials or prepregs, other than those specified in 1C010.a., .b. or .e., as follows: a. Carbon or aramid fibrous or filamentary materials having either of the following characteristics: 1. A "specific modulus" of 12,7 × 106 m or greater; or 2. A "specific tensile strength" of 23,5 × 104 m or greater; 1. A "specific modulus" of 12,7 × 106 m or greater; or 2. A "specific tensile strength" of 23,5 × 104 m or greater; Note: 1C210.a. does not control aramid fibrous or filamentary materials having 0,25 % by weight or more of an ester based fibre surface modifier; b. Glass fibrous or filamentary materials having both of the following characteristics: 1. A "specific modulus" of 3,18 × 106 m or greater; and 2. A "specific tensile strength" of 7,62 × 104 m or greater; 1. A "specific modulus" of 3,18 × 106 m or greater; and 2. A "specific tensile strength" of 7,62 × 104 m or greater; c. Thermoset resin impregnated continuous "yarns", "rovings", "tows" or "tapes" with a width of 15 mm or less (prepregs), made from carbon or glass fibrous or filamentary materials specified in 1C210.a. or .b. Technical Note: The resin forms the matrix of the composite. Note: In 1C210, fibrous or filamentary materials is restricted to continuous "monofilaments", "yarns", "rovings", "tows" or "tapes". 1C216Maraging steel, other than that specified in 1C116, capable of an ultimate tensile strength of 1950 MPa or more, at 293 K (20 °C). 1C216Maraging steel, other than that specified in 1C116, capable of an ultimate tensile strength of 1950 MPa or more, at 293 K (20 °C). Note: 1C216 does not control forms in which all linear dimensions are 75 mm or less. Technical Note: The phrase maraging steel capable of encompasses maraging steel before or after heat treatment. 1C225Boron enriched in the boron-10 (10B) isotope to greater than its natural isotopic abundance, as follows: elemental boron, compounds, mixtures containing boron, manufactures thereof, waste or scrap of any of the foregoing. Note: In 1C225 mixtures containing boron include boron loaded materials. Technical Note: The natural isotopic abundance of boron-10 is approximately 18,5 weight per cent (20 atom per cent). The natural isotopic abundance of boron-10 is approximately 18,5 weight per cent (20 atom per cent). 1C226Tungsten, tungsten carbide, and alloys containing more than 90 % tungsten by weight, other than that specified in 1C117, having both of the following characteristics: a. In forms with a hollow cylindrical symmetry (including cylinder segments) with an inside diameter between 100 mm and 300 mm; and b. A mass greater than 20 kg. … 19 unchanged lines … 1C233Lithium enriched in the lithium-6 (6Li) isotope to greater than its natural isotopic abundance, and products or devices containing enriched lithium, as follows: elemental lithium, alloys, compounds, mixtures containing lithium, manufactures thereof, waste or scrap of any of the foregoing. Note: 1C233 does not control thermoluminescent dosimeters. Technical Note: The natural isotopic abundance of lithium-6 is approximately 6,5 weight per cent (7,5 atom per cent). The natural isotopic abundance of lithium-6 is approximately 6,5 weight per cent (7,5 atom per cent). 1C234Zirconium with a hafnium content of less than 1 part hafnium to 500 parts zirconium by weight, as follows: metal, alloys containing more than 50 % zirconium by weight, compounds, manufactures thereof, waste or scrap of any of the foregoing, other than those specified in 0A001.f. Note: 1C234 does not control zirconium in the form of foil having a thickness of 0,10 mm or less. 1C235Tritium, tritium compounds, mixtures containing tritium in which the ratio of tritium to hydrogen atoms exceeds 1 part in 1000, and products or devices containing any of the foregoing. Note: 1C235 does not control a product or device containing less than 1,48 × 103 GBq (40 Ci) of tritium. 1C236Radionuclides appropriate for making neutron sources based on alpha-n reaction, other than those specified in 0C001 and 1C012.a., in the following forms: a. Elemental; b. Compounds having a total activity of 37 GBq/kg (1 Ci/kg) or greater; c. Mixtures having a total activity of 37 GBq/kg (1 Ci/kg) or greater; d. Products or devices containing any of the foregoing. Note: 1C236 does not control a product or device containing less than 3,7 GBq (100 millicuries) of activity. Note: 1C236 does not control a product or device containing less than 3,7 GBq (100 millicuries) of activity. Technical Note: In 1C236 radionuclides are any of the following: Actinium-225 (225Ac) Actinium-227 (227Ac) Californium-253 (253Cf) Curium-240 (240Cm) Curium-241 (241Cm) Curium-242 (242Cm) Curium-243 (243Cm) Curium-244 (244Cm) Einsteinium-253 (253Es) Einsteinium-254 (254Es) Gadolinium-148 (148Gd) Plutonium-236 (236Pu) Plutonium-238 (238Pu) Polonium-208 (208Po) Polonium-208 ( 208Po) Polonium-209 (209Po) Polonium-210 (210Po) Radium-223 (223Ra) Thorium-227 (227Th) Thorium-228 (228Th) Uranium-230 (230U) Uranium-232 (232U) 1C237Radium-226 (226Ra), radium-226 alloys, radium-226 compounds, mixtures containing radium-226, manufactures thereof, and products or devices containing any of the foregoing. Note: 1C237 does not control the following: a. Medical applicators; b. A product or device containing less than 0,37 GBq (10 millicuries) of radium-226. b. A product or device containing less than 0,37 GBq (10 millicuries) of radium-226. 1C238Chlorine trifluoride (ClF3). 1C239High explosives, other than those specified in the Military Goods Controls, or substances or mixtures containing more than 2 % by weight thereof, with a crystal density greater than 1,8 g/cm3 and having a detonation velocity greater than 8000 m/s. 1C240Nickel powder and porous nickel metal, other than those specified in 0C005, as follows: … 64 unchanged lines … 51. Sulphur monochloride (CAS 10025-67-9); 52. Sulphur dichloride (CAS 10545-99-0); 53. Triethanolamine hydrochloride (CAS 637-39-8); 54. N,N-Diisopropyl-(beta)-aminoethyl chloride hydrochloride (CAS 4261-68-1); 54. N,N-Diisopropyl-(beta)-aminoethyl chloride hydrochloride (CAS 4261-68-1); 55. Methylphosphonic acid (CAS 993-13-5); 56. Diethyl methylphosphonate (CAS 683-08-9); 57. N,N-Dimethylaminophosphoryl dichloride (CAS 677-43-0); … 40 unchanged lines … 3. Andes virus; 4. Avian influenza virus, which are: a. Uncharacterised; or b. Defined in Annex I(2) EC Directive 2005/94/EC (OJ L 10, 14.1.2006 p. 16) as having high pathogenicity, as follows: b. Defined in Annex I(2) EC Directive 2005/94/EC (OJ L 10, 14.1.2006 p. 16) as having high pathogenicity, as follows: 1. Type A viruses with an IVPI (intravenous pathogenicity index) in 6 week old chickens of greater than 1,2; or 2. Type A viruses of the subtypes H5 or H7 with genome sequences codified for multiple basic amino acids at the cleavage site of the haemagglutinin molecule similar to that observed for other HPAI viruses, indicating that the haemagglutinin molecule can be cleaved by a host ubiquitous protease; 5. Bluetongue virus; … 64 unchanged lines … 9. Clostridium baratii, botulinum neurotoxin producing strains; 10. Clostridium botulinum; 11. Clostridium butyricum, botulinum neurotoxin producing strains; 12. Clostridium perfringens epsilon toxin producing types; 12 Clostridium perfringens epsilon toxin producing types; 13. Coxiella burnetii; 14. Francisella tularensis; 15. Mycoplasma capricolum subspecies capripneumoniae (strain F38); … 61 unchanged lines … 1. Colletotrichum kahawae (Colletotrichum coffeanum var. virulans); 2. Cochliobolus miyabeanus (Helminthosporium oryzae); 3. Microcyclus ulei (syn. Dothidella ulei); 4. Puccinia graminis ssp. graminis var. graminis/Puccinia graminis ssp. graminis var. stakmanii (Puccinia graminis [syn. Puccinia graminis f. sp. tritici]); 4. Puccinia graminis ssp. graminis var. graminis / Puccinia graminis ssp. graminis var. stakmanii (Puccinia graminis [syn. Puccinia graminis f. sp. tritici]); 5. Puccinia striiformis (syn. Puccinia glumarum); 6. Magnaporthe oryzae (Pyricularia oryzae); 7. Peronosclerospora philippinensis (Peronosclerospora sacchari); … 56 unchanged lines … 1. Less than 1000 ppm for single oxides or carbides; or 2. Less than 5000 ppm for complex compounds or single nitrides; and c. Being any of the following: 1. Zirconia (CAS 1314-23-4) with an average particle size equal to or less than 1 μm and no more than 10 % of the particles larger than 5 μm; or 2. Other ceramic powders with an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm; 1. Zirconia (CAS 1314-23-4) with an average particle size equal to or less than 1 μm and no more than 10 % of the particles larger than 5 μm; or 2. Other ceramic powders with an average particle size equal to or less than 5 μm and no more than 10 % of the particles larger than 10 μm; 2. Non-"composite" ceramic materials composed of the materials specified in 1E002.c.1.; Note: 1E002.c.2. does not control "technology" for abrasives. d. Not used; e. "Technology" for the installation, maintenance or repair of materials specified in 1C001; f. "Technology" for the repair of "composite" structures, laminates or materials specified in 1A002 or 1C007.c.; Note: 1E002.f. does not control "technology" for the repair of "civil aircraft" structures using carbon "fibrous or filamentary materials" and epoxy resins, contained in "aircraft" manufacturers' manuals. g. "Libraries" specially designed or modified to enable equipment to perform the functions of equipment specified in 1A004.c. or 1A004.d. 1E101"Technology" according to the General Technology Note for the "use" of goods specified in 1A102, 1B001, 1B101, 1B102, 1B115 to 1B119, 1C001, 1C101, 1C107, 1C111 to 1C118, 1D101 or 1D103. 1E102"Technology" according to the General Technology Note for the "development" of "software" specified in 1D001, 1D101 or 1D103. 1E103"Technology" for the regulation of temperature, pressure or atmosphere in autoclaves or hydroclaves, when used for the "production" of "composites" or partially processed "composites". 1E104"Technology" for the "production" of pyrolytically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1573 K (1300 °C) to 3173 K (2900 °C) temperature range at pressures of 130 Pa to 20 kPa. 1E104"Technology" for the "production" of pyrolytically derived materials formed on a mould, mandrel or other substrate from precursor gases which decompose in the 1573 K (1300 °C) to 3173 K (2900 °C) temperature range at pressures of 130 Pa to 20 kPa. Note: 1E104 includes "technology" for the composition of precursor gases, flow-rates and process control schedules and parameters. 1E201"Technology" according to the General Technology Note for the "use" of goods specified in 1A002, 1A007, 1A202, 1A225 to 1A227, 1B201, 1B225 to 1B234, 1C002.b.3. or .b.4., 1C010.b., 1C202, 1C210, 1C216, 1C225 to 1C241 or 1D201. 1E201"Technology" according to the General Technology Note for the "use" of goods specified in 1A002, 1A007, 1A202, 1A225 to 1A227, 1B201, 1B225 to 1B235, 1C002.b.3. or .b.4., 1C010.b., 1C202, 1C210, 1C216, 1C225 to 1C241 or 1D201. 1E202"Technology" according to the General Technology Note for the "development" or "production" of goods specified in 1A007, 1A202 or 1A225 to 1A227. 1E203"Technology" according to the General Technology Note for the "development" of "software" specified in 1D201. PART IV Category 2 CATEGORY 2 - MATERIALS PROCESSING 2ASystems, Equipment and Components N.B. For quiet running bearings, see the Military Goods Controls. 2A001Anti-friction bearings, bearing systems and components, as follows: N.B. SEE ALSO 2A101. a. Ball bearings and solid roller bearings, having all tolerances specified by the manufacturer in accordance with ISO 492 Tolerance Class 4 or Class 2 (or national equivalents), or better, and having both rings and rolling elements, made from monel or beryllium; Note: 2A001.a. does not control tapered roller bearings. Technical Notes: 1. Ring - annular part of a radial rolling bearing incorporating one or more raceways (ISO 5593:1997). 2. Rolling element - ball or roller which rolls between raceways (ISO 5593:1997). b. Not used; c. Active magnetic bearing systems using any of the following, and specially designed components therefor: 1. Materials with flux densities of 2,0 T or greater and yield strengths greater than 414 MPa; 1. Materials with flux densities of 2,0 T or greater and yield strengths greater than 414 MPa; 2. All-electromagnetic 3D homopolar bias designs for actuators; or 3. High temperature (450 K (177 °C) and above) position sensors. 2A101Radial ball bearings, other than those specified in 2A001, having all tolerances specified in accordance with ISO 492 Tolerance Class 2 (or ANSI/ABMA Std 20 Tolerance Class ABEC-9 or other national equivalents), or better and having all of the following characteristics: a. An inner ring bore diameter between 12 mm and 50 mm; b. An outer ring outside diameter between 25 mm and 100 mm; and c. A width between 10 mm and 20 mm. 2A225Crucibles made of materials resistant to liquid actinide metals, as follows: a. Crucibles having both of the following characteristics: 1. A volume of between 150 cm3 and 8000 cm3; and 2. Made of or coated with any of the following materials, or combination of the following materials, having an overall impurity level of 2 % or less by weight: a. Calcium fluoride (CaF2); b. Calcium zirconate (metazirconate) (CaZrO3); c. Cerium sulphide (Ce2S3); d. Erbium oxide (erbia) (Er2O3); e. Hafnium oxide (hafnia) (HfO2); f. Magnesium oxide (MgO); g. Nitrided niobium-titanium-tungsten alloy (approximately 50 % Nb, 30 % Ti, 20 % W); g. Nitrided niobium-titanium-tungsten alloy (approximately 50 % Nb, 30 % Ti, 20 % W); h. Yttrium oxide (yttria) (Y2O3); or i. Zirconium oxide (zirconia) (ZrO2); b. Crucibles having both of the following characteristics: … 16 unchanged lines … a. Wheel-dressing systems in grinding machines; b. Parallel rotary axes designed for mounting of separate workpieces; c. Co-linear rotary axes designed for manipulating the same workpiece by holding it in a chuck from different ends. 3. Axis nomenclature shall be in accordance with International Standard ISO 841:2001, Industrial automation systems and integration - Numerical control of machines - Coordinate system and motion nomenclature. 3. Axis nomenclature shall be in accordance with International Standard ISO 841:2001, Industrial automation systems and integration - Numerical control of machines - Coordinate system and motion nomenclature. 4. For the purposes of 2B001 to 2B009 a "tilting spindle" is counted as a rotary axis. 5. Stated "unidirectional positioning repeatability" may be used for each machine tool model as an alternative to individual machine tests and is determined as follows: a. Select five machines of a model to be evaluated; b. Measure the linear axis repeatability (R↑,R↓) according to ISO 230-2:2014 and evaluate "unidirectional positioning repeatability" for each axis of each of the five machines; c. Determine the arithmetic mean value of the "unidirectional positioning repeatability"-values for each axis of all five machines together. These arithmetic mean values of "unidirectional positioning repeatability" (UPR) become the stated value of each axis for the model (UPRx, UPRy …); c. Determine the arithmetic mean value of the "unidirectional positioning repeatability"-values for each axis of all five machines together. These arithmetic mean values of "unidirectional positioning repeatability" (UPR) become the stated value of each axis for the model (UPRx, UPRy, …); d. Since the Category 2 list refers to each linear axis there will be as many 'stated "unidirectional positioning repeatability" values as there are linear axes; e. If any axis of a machine model not specified in 2B001.a. to 2B001.c. has a 'stated "unidirectional positioning repeatability" equal to or less than the specified "unidirectional positioning repeatability" of each machine tool model plus 0,7 μm, the builder should be required to reaffirm the accuracy level once every eighteen months. 6. For the purposes of 2B001.a. to 2B001.c., measurement uncertainty for the "unidirectional positioning repeatability" of machine tools, as defined in the International Standard ISO 230-2:2014 or national equivalents, shall not be considered. 6. For the purposes of 2B001.a. to 2B001.c., measurement uncertainty for the "unidirectional positioning repeatability" of machine tools, as defined in the International Standard ISO 230-2:2014 or national equivalents, shall not be considered. 7. For the purpose of 2B001.a. to 2B001.c., the measurement of axes shall be made according to test procedures in 5.3.2. of ISO 230-2:2014. Tests for axes longer than 2 meters shall be made over 2 m segments. Axes longer than 4 m require multiple tests (e.g., two tests for axes longer than 4 m and up to 8 m, three tests for axes longer than 8 m and up to 12 m), each over 2 m segments and distributed in equal intervals over the axis length. Test segments are equally spaced along the full axis length, with any excess length equally divided at the beginning, in between, and at the end of the test segments. The smallest "unidirectional positioning repeatability"-value of all test segments is to be reported. 2B001Machine tools and any combination thereof, for removing (or cutting) metals, ceramics or "composites", which, according to the manufacturer’s technical specification, can be equipped with electronic devices for "numerical control", as follows: N.B. SEE ALSO 2B201. … 25 unchanged lines … 3. A "unidirectional positioning repeatability" for jig boring machines, equal to or less (better) than 1,1 μm along one or more linear axis; or 4. Fly cutting machines having all of the following: a. Spindle "run-out" and "camming" less (better) than 0,0004 mm TIR; and b. Angular deviation of slide movement (yaw, pitch and roll) less (better) than 2 seconds of arc, TIR over 300 mm of travel; b. Angular deviation of slide movement (yaw, pitch and roll) less (better) than 2 seconds of arc, TIR over 300 mm of travel; c. Machine tools for grinding having any of the following: 1. Having all of the following: a. "Unidirectional positioning repeatability" equal to or less (better) than 1,1 μm along one or more linear axis; and … 38 unchanged lines … 2B003"Numerically controlled" machine tools, specially designed for the shaving, finishing, grinding or honing of hardened (Rc=40 or more) spur, helical and double-helical gears having all of the following: a. A pitch diameter exceeding 1250 mm; b. A face width of 15 % of pitch diameter or larger; and c. A finished quality of AGMA 14 or better (equivalent to ISO 1328 class 3). c. A finished quality of AGMA 14 or better (equivalent to ISO 1328 class 3). 2B004Hot "isostatic presses" having all of the following, and specially designed components and accessories therefor: N.B. SEE ALSO 2B104 and 2B204 N.B. SEE ALSO 2B104 and 2B204. a. A controlled thermal environment within the closed cavity and a chamber cavity with an inside diameter of 406 mm or more; and b. Having any of the following: 1. A maximum working pressure exceeding 207 MPa; 2. A controlled thermal environment exceeding 1773 K (1500 °C); or 1. A maximum working pressure exceeding 207 MPa; 2. A controlled thermal environment exceeding 1773 K (1500 °C); or 3. A facility for hydrocarbon impregnation and removal of resultant gaseous degradation products. Technical Note: The inside chamber dimension is that of the chamber in which both the working temperature and the working pressure are achieved and does not include fixtures. That dimension will be the smaller of either the inside diameter of the pressure chamber or the inside diameter of the insulated furnace chamber, depending on which of the two chambers is located inside the other. N.B. For specially designed dies, moulds and tooling see 1B003, 9B009 and the Military Goods Controls. 2B005Equipment specially designed for the deposition, processing and in-process control of inorganic overlays, coatings and surface modifications, as follows, for substrates specified in column 2, by processes shown in column 1 in the Table following 2E003.f., and specially designed automated handling, positioning, manipulation and control components therefor: a. Chemical vapour deposition (CVD) production equipment having all of the following: N.B. SEE ALSO 2B105. 1. A process modified for one of the following: a. Pulsating CVD; b. Controlled nucleation thermal deposition (CNTD); or c. Plasma enhanced or plasma assisted CVD; and 2. Having any of the following: a. Incorporating high vacuum (equal to or less than 0,01 Pa) rotating seals; or a. Incorporating high vacuum (equal to or less than 0,01 Pa) rotating seals; or b. Incorporating in situ coating thickness control; b. Ion implantation production equipment having beam currents of 5 mA or more; b. Ion implantation production equipment having beam currents of 5 mA or more; c. Electron beam physical vapour deposition (EB-PVD) production equipment incorporating power systems rated for over 80 kW and having any of the following: 1. A liquid pool level "laser" control system which regulates precisely the ingots feed rate; or 2. A computer controlled rate monitor operating on the principle of photo-luminescence of the ionised atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements; d. Plasma spraying production equipment having any of the following: 1. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0,01 Pa prior to the spraying process; or 1. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0,01 Pa prior to the spraying process; or 2. Incorporating in situ coating thickness control; e. Sputter deposition production equipment capable of current densities of 0,1 mA/mm2 or higher at a deposition rate of 15 μm/h or more; e. Sputter deposition production equipment capable of current densities of 0,1 mA/mm2 or higher at a deposition rate of 15 μm/h or more; f. Cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode; g. Ion plating production equipment capable of the in situ measurement of any of the following: 1. Coating thickness on the substrate and rate control; or 2. Optical characteristics. Note: 2B005 does not control chemical vapour deposition, cathodic arc, sputter deposition, ion plating or ion implantation equipment, specially designed for cutting or machining tools. 2B006Dimensional inspection or measuring systems, equipment, position feedback units and "electronic assemblies", as follows: a. Computer controlled or "numerical controlled" Coordinate Measuring Machines (CMM), having a three dimensional (volumetric) maximum permissible error of length measurement (E0,MPE) at any point within the operating range of the machine (i.e., within the length of axes) equal to or less (better) than (1,7 + L/1 000) μm (L is the measured length in mm), according to ISO 10360-2:2009; a. Computer controlled or "numerical controlled" Coordinate Measuring Machines (CMM), having a three dimensional (volumetric) maximum permissible error of length measurement (E0,MPE) at any point within the operating range of the machine (i.e., within the length of axes) equal to or less (better) than (1,7 + L/1 000) μm (L is the measured length in mm), according to ISO 10360-2:2009; Technical Note: The E0,MPE of the most accurate configuration of the CMM specified by the manufacturer (e.g., best of the following: probe, stylus length, motion parameters, environment) and with "all compensations available" shall be compared to the 1,7+L/1 000 μm threshold. N.B. SEE ALSO 2B206. b. Linear displacement measuring instruments or systems, linear position feedback units, and "electronic assemblies", as follows: Note: Interferometer and optical-encoder measuring systems containing a "laser" are only specified in 2B006.b.3 and 2B206.c. 1. Non-contact type measuring systems with a resolution equal to or less (better) than 0,2 μm within 0 to 0,2 mm of the measuring range; 1. Non-contact type measuring systems with a resolution equal to or less (better) than 0,2 μm within 0 to 0,2 mm of the measuring range; Technical Notes: For the purposes of 2B006.b.1.: 1. non-contact type measuring systems are designed to measure the distance between the probe and measured object along a single vector, where the probe or measured object is in motion. 2. measuring range means the distance between the minimum and maximum working distance. 2. Linear position feedback units specially designed for machine tools and having an overall "accuracy" less (better) than (800 + (600 × L/1 000)) nm (L equals effective length in mm); 2. Linear position feedback units specially designed for machine tools and having an overall "accuracy" less (better) than (800 + (600 × L/1 000)) nm (L equals effective length in mm); 3. Measuring systems having all of the following: a. Containing a "laser"; b. A resolution over their full scale of 0,200 nm or less (better); and c. Capable of achieving a "measurement uncertainty" equal to or less (better) than (1,6 + L/2 000) nm (L is the measured length in mm) at any point within a measuring range, when compensated for the refractive index of air and measured over a period of 30 seconds at a temperature of 20 ± 0,01 °C; or 4. "Electronic assemblies" specially designed to provide feedback capability in systems specified in 2B006.b.3.; Technical Note: For the purposes of 2B006.b., resolution is the least increment of a measuring device; on digital instruments, the least significant bit. c. Rotary position feedback units specially designed for machine tools or angular displacement measuring instruments, having an angular position "accuracy" equal to or less (better) than 0,9 second of arc; Note: 2B006.c. does not control optical instruments, such as autocollimators, using collimated light (e.g. "laser" light) to detect angular displacement of a mirror. d. Equipment for measuring surface roughness (including surface defects), by measuring optical scatter with a sensitivity of 0,5 nm or less (better). Note: 2B006 includes machine tools, other than those specified in 2B001, that can be used as measuring machines if they meet or exceed the criteria specified for the measuring machine function. 2B007"Robots" having any of the following characteristics and specially designed controllers and "end-effectors" therefor: N.B. SEE ALSO 2B207. a. Not used; b. Specially designed to comply with national safety standards applicable to potentially explosive munitions environments; Note: 2B007.b. does not control "robots" specially designed for paint-spraying booths. c. Specially designed or rated as radiation-hardened to withstand a total radiation dose greater than 5 × 103 Gy (silicon) without operational degradation; or c. Specially designed or rated as radiation-hardened to withstand a total radiation dose greater than 5 × 103 Gy (silicon) without operational degradation; or Technical Note: The term Gy (silicon) refers to the energy in Joules per kilogram absorbed by an unshielded silicon sample when exposed to ionising radiation. d. Specially designed to operate at altitudes exceeding 30000 m. 2B008Compound rotary tables and "tilting spindles", specially designed for machine tools, as follows: a. Not used; b. Not used; c. Compound rotary tables having all of the following: 1. Designed for machine tools for turning, milling or grinding; and 2. Two rotary axes designed to be coordinated simultaneously for contouring control; Technical Note: A compound rotary table is a table allowing the workpiece to rotate and tilt about two non-parallel axes d. "Tilting spindles" having all of the following: 1. Designed for machine tools for turning, milling or grinding; and 2. Designed to be coordinated simultaneously for "contouring control". 2B009Spin-forming machines and flow-forming machines, which, according to the manufacturer’s technical specification, can be equipped with "numerical control" units or a computer control and having all of the following: 2B009Spin-forming machines and flow-forming machines, which, according to the manufacturer's technical specification, can be equipped with "numerical control" units or a computer control and having all of the following: N.B. SEE ALSO 2B109 AND 2B209. a. Three or more axes which can be coordinated simultaneously for "contouring control"; and b. A roller force more than 60 kN. Technical Note: For the purpose of 2B009, machines combining the function of spin-forming and flow-forming are regarded as flow-forming machines. 2B104"Isostatic presses", other than those specified in 2B004, having all of the following: N.B. SEE ALSO 2B204. a. Maximum working pressure of 69 MPa or greater; b. Designed to achieve and maintain a controlled thermal environment of 873 K (600 °C) or greater; and c. Possessing a chamber cavity with an inside diameter of 254 mm or greater. 2B105Chemical vapour deposition (CVD) furnaces, other than those specified in 2B005.a., designed or modified for the densification of carbon-carbon composites. 2B109Flow-forming machines, other than those specified in 2B009, usable in the "production" of propulsion components and equipment (e.g. motor cases and interstages) for "missiles", and specially designed components as follows: N.B. SEE ALSO 2B209. a. Flow-forming machines having all of the following: 1. Equipped with, or, according to the manufacturer's technical specification, are capable of being equipped with "numerical control" units or computer control; and 2. More than two axes which can be coordinated simultaneously for "contouring control". b. Specially designed components for flow-forming machines specified in 2B009 or 2B109.a. Technical Note: Machines combining the function of spin-forming and flow-forming are for the purpose of 2B109 regarded as flow-forming machines. 2B116Vibration test systems, equipment and components therefor, as follows: a. Vibration test systems employing feedback or closed loop techniques and incorporating a digital controller, capable of vibrating a system at an acceleration equal to or greater than 10 g rms between 20 Hz and 2 kHz while imparting forces equal to or greater than 50 kN, measured bare table; a. Vibration test systems employing feedback or closed loop techniques and incorporating a digital controller, capable of vibrating a system at an acceleration equal to or greater than 10 g rms between 20 Hz and 2 kHz while imparting forces equal to or greater than 50 kN, measured bare table; b. Digital controllers, combined with specially designed vibration test software, with a real-time control bandwidth greater than 5 kHz designed for use with vibration test systems specified in 2B116.a.; Technical Note: In 2B116.b., real-time control bandwidth means the maximum rate at which a controller can execute complete cycles of sampling, processing data and transmitting control signals. c. Vibration thrusters (shaker units), with or without associated amplifiers, capable of imparting a force equal to or greater than 50 kN, measured bare table, and usable in vibration test systems specified in 2B116.a.; d. Test piece support structures and electronic units designed to combine multiple shaker units in a system capable of providing an effective combined force equal to or greater than 50 kN, measured bare table, and usable in vibration systems specified in 2B116.a. c. Vibration thrusters (shaker units), with or without associated amplifiers, capable of imparting a force equal to or greater than 50 kN, measured bare table, and usable in vibration test systems specified in 2B116.a.; d. Test piece support structures and electronic units designed to combine multiple shaker units in a system capable of providing an effective combined force equal to or greater than 50 kN, measured bare table, and usable in vibration systems specified in 2B116.a. Technical Note: In 2B116, bare table means a flat table, or surface, with no fixture or fittings. 2B117Equipment and process controls, other than those specified in 2B004, 2B005.a., 2B104 or 2B105, designed or modified for densification and pyrolysis of structural composite rocket nozzles and reentry vehicle nose tips. … 31 unchanged lines … a. Select five machines of a model to be evaluated; b. Measure the linear axis accuracies according to ISO 230-2:1988Manufacturers calculating positioning accuracy in accordance with ISO 230-2:1997 or 2006 should consult the competent authorities of the EU Member State in which they are established.; c. Determine the accuracy values (A) for each axis of each machine. The method of calculating the accuracy value is described in the ISO 230-2:1988Manufacturers calculating positioning accuracy in accordance with ISO 230-2:1997 or 2006 should consult the competent authorities of the EU Member State in which they are established. standard; d. Determine the average accuracy value of each axis. This average value becomes the stated positioning accuracy of each axis for the model (Âx Ây...); d. Determine the average accuracy value of each axis. This average value becomes the stated positioning accuracy of each axis for the model (Âx Ây…); e. Since item 2B201 refers to each linear axis, there will be as many stated positioning accuracy values as there are linear axes; f. If any axis of a machine tool not specified in 2B201.a., 2B201.b. or 2B201.c. has a stated positioning accuracy of 6 μm or better (less) for grinding machines, and 8 μm or better (less) for milling and turning machines, both according to ISO 230-2:1988Manufacturers calculating positioning accuracy in accordance with ISO 230-2:1997 or 2006 should consult the competent authorities of the EU Member State in which they are established., then the builder should be required to reaffirm the accuracy level once every eighteen months. a. Machine tools for milling, having any of the following characteristics: 1. Positioning accuracies with "all compensations available" equal to or less (better) than 6 μm according to ISO 230-2:1988Manufacturers calculating positioning accuracy in accordance with ISO 230-2:1997 or 2006 should consult the competent authorities of the EU Member State in which they are established. or national equivalents along any linear axis; 1. Positioning accuracies with "all compensations available" equal to or less (better) than 6 μm according to ISO 230-2:1988Manufacturers calculating positioning accuracy in accordance with ISO 230-2:1997 or 2006 should consult the competent authorities of the EU Member State in which they are established. or national equivalents along any linear axis; 2. Two or more contouring rotary axes; or 3. Five or more axes which can be coordinated simultaneously for "contouring control"; Note: 2B201.a. does not control milling machines having the following characteristics: a. X-axis travel greater than 2 m; and b. Overall positioning accuracy on the x-axis more (worse) than 30 μm. b. Machine tools for grinding, having any of the following characteristics: 1. Positioning accuracies with "all compensations available" equal to or less (better) than 4 μm according to ISO 230-2:1988Manufacturers calculating positioning accuracy in accordance with ISO 230-2:1997 or 2006 should consult the competent authorities of the EU Member State in which they are established. or national equivalents along any linear axis; 1. Positioning accuracies with "all compensations available" equal to or less (better) than 4 μm according to ISO 230-2:1988Manufacturers calculating positioning accuracy in accordance with ISO 230-2:1997 or 2006 should consult the competent authorities of the EU Member State in which they are established. or national equivalents along any linear axis; 2. Two or more contouring rotary axes; or 3. Five or more axes which can be coordinated simultaneously for "contouring control"; Note: 2B201.b. does not control grinding machines as follows: … 20 unchanged lines … 2B206Dimensional inspection machines, instruments or systems, other than those specified in 2B006, as follows: a. Computer controlled or numerically controlled coordinate measuring machines (CMM) having either of the following characteristics: 1. Having only two axes and having a maximum permissible error of length measurement along any axis (one dimensional), identified as any combination of E0x,MPE, E0y,MPE, or E0z,MPE, equal to or less (better) than (1,25 + L/1 000) μm (where L is the measured length in mm) at any point within the operating range of the machine (i.e., within the length of the axis), according to ISO 10360-2:2009; or 2. Three or more axes and having a three dimensional (volumetric) maximum permissible error of length measurement (E0,MPE) equal to or less (better) than (1,7 + L/800) μm (where L is the measured length in mm) at any point within the operating range of the machine (i.e., within the length of the axis), according to ISO 10360-2:2009; 2. Three or more axes and having a three dimensional (volumetric) maximum permissible error of length measurement (E0,MPE) equal to or less (better) than (1,7 + L/800) μm (where L is the measured length in mm) at any point within the operating range of the machine (i.e., within the length of the axis), according to ISO 10360-2:2009; Technical Note: The E0,MPE of the most accurate configuration of the CMM specified according to ISO 10360-2:2009 by the manufacturer (e.g., best of the following: probe, stylus, length, motion parameters, environments) and with all compensations available shall be compared to the (1,7 + L/800) μm threshold. The E0,MPE of the most accurate configuration of the CMM specified according to ISO 10360-2:2009 by the manufacturer (e.g., best of the following: probe, stylus, length, motion parameters, environments) and with all compensations available shall be compared to the (1,7 + L/800) μm threshold. b. Systems for simultaneous linear-angular inspection of hemishells, having both of the following characteristics: 1. "Measurement uncertainty" along any linear axis equal to or less (better) than 3,5 μm per 5 mm; and 2. "Angular position deviation" equal to or less than 0,02o; c. Linear displacement measuring systems having all of the following characteristics: Technical Note: For the purpose of 2B206.c. linear displacement means the change of distance between the measuring probe and the measured object. 1. Containing a "laser"; and 2. Capable of maintaining, for at least 12 hours, at a temperature of ± 1 K (± 1 °C); around a standard temperature and standard pressure, all of the following: a. A resolution over their full scale of 0,1 μm or better; and b. With a "measurement uncertainty" equal to or better (less) than (0,2 + L/2 000) μm (L is the measured length in mm). 2. Capable of maintaining, for at least 12 hours, over a temperature range of ± 1 K (± 1 °C); around a standard temperature and standard pressure, all of the following: a. A resolution over their full scale of 0,1 μm or better; and Technical Note: For the purpose of 2B206.c.2.a. resolution is the least increment of a measuring device; on digital instruments, the least significant bit. b. With a "measurement uncertainty" equal to or better (less) than (0,2 + L/2 000) μm (L is the measured length in mm). Note: 2B206.c. does not control measuring interferometer systems, without closed or open loop feedback, containing a laser to measure slide movement errors of machine tools, dimensional inspection machines, or similar equipment. d. Linear variable differential transformer (LVDT) systems having both of the following characteristics: Technical Note: For the purpose of 2B206.d. linear displacement means the change of distance between the measuring probe and the measured object. 1. Having any of the following: a. "Linearity" equal to or less (better) than 0,1 % measured from 0 to the full operating range, for LVDTs with an operating range up to 5 mm; or b. "Linearity" equal to or less (better) than 0,1 % measured from 0 to 5 mm for LVDTs with an operating range greater than 5 mm; and 2. Drift equal to or better (less) than 0,1 % per day at a standard ambient test room temperature ±1 K (± 1 °C). 2. Drift equal to or better (less) than 0,1 % per day at a standard ambient test room temperature ± 1 K (± 1 °C). Note 1: Machine tools that can be used as measuring machines are controlled if they meet or exceed the criteria specified for the machine tool function or the measuring machine function. Note 2: A machine specified in 2B206 is controlled if it exceeds the control threshold anywhere within its operating range. Technical Notes: … 15 unchanged lines … b. Centrifugal balancing machines designed for balancing hollow cylindrical rotor components and having all of the following characteristics: 1. Journal diameter greater than 75 mm; 2. Mass capability of from 0,9 to 23 kg; 3. A minimum achievable residual specific unbalance equal to or less than 10 g mm/kg per plane; and 3. A minimum achievable residual specific unbalance equal to or less than 10 g mm/kg per plane; and 4. Belt drive type. 2B225Remote manipulators that can be used to provide remote actions in radiochemical separation operations or hot cells, having either of the following characteristics: a. A capability of penetrating 0,6 m or more of hot cell wall (through-the-wall operation); or … 63 unchanged lines … 5. Phosphor bronze; or 6. Fluoropolymers. 2B350Chemical manufacturing facilities, equipment and components, as follows: a. Reaction vessels or reactors, with or without agitators, with total internal (geometric) volume greater than 0,1 m3 (100 litres) and less than 20 m3 (20000 litres), where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials: a. Reaction vessels or reactors, with or without agitators, with total internal (geometric) volume greater than 0,1 m3 (100 litres) and less than 20 m3 (20000 litres), where all surfaces that come in direct contact with the chemical(s) being processed or contained are made from any of the following materials: N.B. For prefabricated repair assemblies, see 2B350.k. 1. Alloys with more than 25 % nickel and 20 % chromium by weight; 2. Fluoropolymers (polymeric or elastomeric materials with more than 35 % fluorine by weight); … 85 unchanged lines … 7. Titanium or titanium alloys; 8. Zirconium or zirconium alloys; or 9. Niobium (columbium) or niobium alloys; i. Multiple-seal and seal-less pumps, with manufacturer's specified maximum flow-rate greater than 0,6 m3/hour, or vacuum pumps with manufacturer's specified maximum flow-rate greater than 5 m3/hour (under standard temperature (273 K (0 °C)) and pressure (101,3 kPa) conditions), other than those specified in 2B233; and casings (pump bodies), preformed casing liners, impellers, rotors or jet pump nozzles designed for such pumps, in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials: i. Multiple-seal and seal-less pumps, with manufacturer's specified maximum flow-rate greater than 0,6 m3/hour, or vacuum pumps with manufacturer's specified maximum flow-rate greater than 5 m3/hour (under standard temperature (273 K (0 °C)) and pressure (101,3 kPa) conditions), other than those specified in 2B233; and casings (pump bodies), preformed casing liners, impellers, rotors or jet pump nozzles designed for such pumps, in which all surfaces that come in direct contact with the chemical(s) being processed are made from any of the following materials: 1. Alloys with more than 25 % nickel and 20 % chromium by weight; 2. Ceramics; 3. Ferrosilicon (high silicon iron alloys); … 16 unchanged lines … 2. Designed for mechanical attachment to glass-lined storage tanks, containers or receivers specified in 2B350.c. Note: For the purposes of 2B350, the materials used for gaskets, packing, seals, screws, washers or other materials performing a sealing function do not determine the status of control, provided that such components are designed to be interchangeable. Technical Notes: 1. Carbon graphite is a composition consisting of amorphous carbon and graphite, in which the graphite content is eight percent or more by weight. 1. Carbon graphite is a composition consisting of amorphous carbon and graphite, in which the graphite content is eight percent or more by weight. 2. For the listed materials in the above entries, the term alloy when not accompanied by a specific elemental concentration is understood as identifying those alloys where the identified metal is present in a higher percentage by weight than any other element. 2B351Toxic gas monitors and monitoring systems and their dedicated detecting components, other than those specified in 1A004, as follows; and detectors; sensor devices; and replaceable sensor cartridges therefor: a. Designed for continuous operation and usable for the detection of chemical warfare agents or chemicals specified in 1C350, at concentrations of less than 0,3 mg/m3; or b. Designed for the detection of cholinesterase-inhibiting activity. 2B352Biological manufacturing and handling equipment, as follows: a. Containment facilities and related equipment as follows: 1. Complete containment facilities that meet the criteria for P3 or P4 (BL3, BL4, L3, L4) containment as specified in the WHO Laboratory Biosafety Manual (3rd edition, Geneva, 2004); 2. Equipment designed for fixed installation in containment facilities specified in 2B352.a., as follows: a. Double-door pass-through decontamination autoclaves; b. Breathing air suit decontamination showers; c. Mechanical-seal or inflatable-seal walkthrough doors; b. Fermenters and components as follows: 1. Fermenters capable of cultivation of "microorganisms" or of live cells for the production of viruses or toxins, without the propagation of aerosols, having a total internal volume of 20 litres or more; 2. Components designed for fermenters specified in 2B352.b.1. as follows: a. Cultivation chambers designed to be sterilised or disinfected in situ; b. Cultivation chamber holding devices; c. Process control units capable of simultaneously monitoring and controlling two or more fermentation system parameters (e.g., temperature, pH, nutrients, agitation, dissolved oxygen, air flow, foam control); Technical Notes: 1. For the purposes of 2B352.b. fermenters include bioreactors, single-use (disposable) bioreactors, chemostats and continuous-flow systems. 2. Cultivation chamber holding devices include single-use cultivation chambers with rigid walls. 2. For the purposes of 2B352.b. cultivation chamber holding devices include single-use cultivation chambers with rigid walls. c. Centrifugal separators, capable of continuous separation without the propagation of aerosols, having all of the following characteristics: 1. Flow rate exceeding 100 litres per hour; 2. Components of polished stainless steel or titanium; … 41 unchanged lines … a. "Software" specially designed or modified for the "development" or "production" of equipment specified in 2A001 or 2B001 to 2B009 b. "Software" specially designed or modified for the "use" of equipment specified in 2A001.c., 2B001 or 2B003 to 2B009. Note: 2D001 does not control part programming "software" that generates "numerical control" codes for machining various parts. 2D002"Software" for electronic devices, even when residing in an electronic device or system, enabling such devices or systems to function as a "numerical control" unit, capable of co-ordinating simultaneously more than four axes for "contouring control". 2D002"Software" for electronic devices, even when residing in an electronic device or system, enabling such devices or systems to function as a "numerical control" unit, capable of co-ordinating simultaneously more than four axes for "contouring control". Note 1: 2D002 does not control "software" specially designed or modified for the operation of items not specified in Category 2. Note 2: 2D002 does not control "software" for items specified in 2B002. See 2D001 and 2D003 for "software" for items specified in 2B002. Note 3: 2D002 does not control "software" that is exported with, and the minimum necessary for the operation of, items not specified in Category 2. 2D003"Software", designed or modified for the operation of equipment specified in 2B002, that converts optical design, workpiece measurements and material removal functions into "numerical control" commands to achieve the desired workpiece form. 2D101"Software" specially designed or modified for the "use" of equipment specified in 2B104, 2B105, 2B109, 2B116, 2B117 or 2B119 to 2B122. N.B. SEE ALSO 9D004. 2D201"Software" specially designed for the "use" of equipment specified in 2B204, 2B206, 2B207, 2B209, 2B219 or 2B227. 2D202"Software" specially designed or modified for the "development", "production" or "use" of equipment specified in 2B201. Note: 2D202 does not control part programming "software" that generates "numerical control" command codes but does not allow direct use of equipment for machining various parts. 2D351"Software", other than that specified in 1D003, specially designed for "use" of equipment specified in 2B351. 2D352"Software" specially designed for nucleic acid assemblers and synthesisers specified in 2B352.i., that is capable of designing and building functional genetic elements from digital sequence data. 2ETechnology 2E001"Technology" according to the General Technology Note for the "development" of equipment or "software" specified in 2A, 2B or 2D. Note: 2E001 includes "technology" for the integration of probe systems into coordinate measurement machines specified in 2B006.a. 2E002"Technology" according to the General Technology Note for the "production" of equipment specified in 2A or 2B. 2E003Other "technology", as follows: a. Not used; b. "Technology" for metal-working manufacturing processes, as follows: 1. "Technology" for the design of tools, dies or fixtures specially designed for any of the following processes: a. "Superplastic forming"; b. "Diffusion bonding"; or c. Direct-acting hydraulic pressing; 2. Technical data consisting of process methods or parameters as listed below used to control: a. "Superplastic forming" of aluminium alloys, titanium alloys or "superalloys": 1. Surface preparation; 2. Strain rate; 3. Temperature; 4. Pressure; b. "Diffusion bonding" of "superalloys" or titanium alloys: 1. Surface preparation; 2. Temperature; 3. Pressure; c. Direct-acting hydraulic pressing of aluminium alloys or titanium alloys: 1. Pressure; 2. Cycle time; d. Hot isostatic densification of titanium alloys, aluminium alloys or "superalloys": 1. Temperature; 2. Pressure; 3. Cycle time; Technical Notes: 1. Direct-acting hydraulic pressing is a deformation process which uses a fluid-filled flexible bladder in direct contact with the workpiece. 2. Hot isostatic densification is a process of pressurising a casting at temperatures exceeding 375 K (102 °C) in a closed cavity through various media (gas, liquid, solid particles, etc.) to create equal force in all directions to reduce or eliminate internal voids in the casting. Technical Note: Direct-acting hydraulic pressing is a deformation process which uses a fluid-filled flexible bladder in direct contact with the workpiece. 2. Not used; N.B. For "technology" for metal-working manufacturing processes for gas turbine engines and components, see 9E003 and the Military Goods Controls. c. "Technology" for the "development" or "production" of hydraulic stretch-forming machines and dies therefor, for the manufacture of airframe structures; d. Not used; e. "Technology" for the "development" of integration "software" for incorporation of expert systems for advanced decision support of shop floor operations into "numerical control" units; … 128 unchanged lines … Modified zirconia (12) Platinum Mixtures thereof (4) Ceramics and Low - expansion glasses (14) Silicides Ceramics and Low- expansion glasses (14) Silicides Platinum Mixtures thereof (4) Dielectic layers (15) … 41 unchanged lines … a. CoCrAlY coatings which contain less than 22 % by weight of chromium, less than 7 % by weight of aluminium and less than 2 % by weight of yttrium; b. CoCrAlY coatings which contain 22 to 24 % by weight of chromium, 10 to 12 % by weight of aluminium and 0,5 to 0,7 % by weight of yttrium; or c. NiCrAlY coatings which contain 21 to 23 % by weight of chromium, 10 to 12 % by weight of aluminium and 0,9 to 1,1 % by weight of yttrium. 6. The term aluminium alloys refers to alloys having an ultimate tensile strength of 190 MPa or more measured at 293 K (20 °C). 6. The term aluminium alloys refers to alloys having an ultimate tensile strength of 190 MPa or more measured at 293 K (20 °C). 7. The term corrosion resistant steel refers to AISI (American Iron and Steel Institute) 300 series or equivalent national standard steels. 8. Refractory metals and alloys include the following metals and their alloys: niobium (columbium), molybdenum, tungsten and tantalum. 9. Sensor window materials, as follows: alumina, silicon, germanium, zinc sulphide, zinc selenide, gallium arsenide, diamond, gallium phosphide, sapphire and the following metal halides: sensor window materials of more than 40 mm diameter for zirconium fluoride and hafnium fluoride. 10. Category 2 does not include "technology" for single-step pack cementation of solid airfoils. 10. Category 2 does not include "technology" for single-step pack cementation of solid aerofoils. 11. Polymers, as follows: polyimide, polyester, polysulphide, polycarbonates and polyurethanes. 12. Modified zirconia refers to additions of other metal oxides (e.g., calcia, magnesia, yttria, hafnia, rare earth oxides) to zirconia in order to stabilise certain crystallographic phases and phase compositions. Thermal barrier coatings made of zirconia, modified with calcia or magnesia by mixing or fusion, are not controlled. 13. Titanium alloys refers only to aerospace alloys having an ultimate tensile strength of 900 MPa or more measured at 293 K (20 °C). 14. Low-expansion glasses refers to glasses which have a coefficient of thermal expansion of 1 × 10–7 K–1 or less measured at 293 K (20 °C). 13. Titanium alloys refers only to aerospace alloys having an ultimate tensile strength of 900 MPa or more measured at 293 K (20 °C). 14. Low-expansion glasses refers to glasses which have a coefficient of thermal expansion of 1 × 10–7 K–1 or less measured at 293 K (20 °C). 15. Dielectric layers are coatings constructed of multi-layers of insulator materials in which the interference properties of a design composed of materials of various refractive indices are used to reflect, transmit or absorb various wavelength bands. Dielectric layers refers to more than four dielectric layers or dielectric/metal "composite" layers. 16. Cemented tungsten carbide does not include cutting and forming tool materials consisting of tungsten carbide/(cobalt, nickel), titanium carbide/(cobalt, nickel), chromium carbide/nickel-chromium and chromium carbide/nickel. 17. "Technology" for depositing diamond-like carbon on any of the following is not controlled: magnetic disk drives and heads, equipment for the manufacture of disposables, valves for faucets, acoustic diaphragms for speakers, engine parts for automobiles, cutting tools, punching-pressing dies, office automation equipment, microphones or medical devices or moulds, for casting or moulding of plastics, manufactured from alloys containing less than 5 % beryllium. 18. Silicon carbide does not include cutting and forming tool materials. 19. Ceramic substrates, as used in this entry, does not include ceramic materials containing 5 % by weight, or greater, clay or cement content, either as separate constituents or in combination. TABLE - DEPOSITION TECHNIQUES - TECHNICAL NOTE Processes specified in Column 1 of the Table are defined as follows: a. Chemical Vapour Deposition (CVD) is an overlay coating or surface modification coating process wherein a metal, alloy, "composite", dielectric or ceramic is deposited upon a heated substrate. Gaseous reactants are decomposed or combined in the vicinity of a substrate resulting in the deposition of the desired elemental, alloy or compound material on the substrate. Energy for this decomposition or chemical reaction process may be provided by the heat of the substrate, a glow discharge plasma, or "laser" irradiation. N.B.1 CVD includes the following processes: directed gas flow out-of-pack deposition, pulsating CVD, controlled nucleation thermal deposition (CNTD), plasma enhanced or plasma assisted CVD processes. N.B.2 Pack denotes a substrate immersed in a powder mixture. N.B.3 The gaseous reactants used in the out-of-pack process are produced using the same basic reactions and parameters as the pack cementation process, except that the substrate to be coated is not in contact with the powder mixture. b. Thermal Evaporation-Physical Vapour Deposition (TE-PVD) is an overlay coating process conducted in a vacuum with a pressure less than 0,1 Pa wherein a source of thermal energy is used to vaporize the coating material. This process results in the condensation, or deposition, of the evaporated species onto appropriately positioned substrates. N.B.1. CVD includes the following processes: directed gas flow out-of-pack deposition, pulsating CVD, controlled nucleation thermal deposition (CNTD), plasma enhanced or plasma assisted CVD processes. N.B.2. Pack denotes a substrate immersed in a powder mixture. N.B.3. The gaseous reactants used in the out-of-pack process are produced using the same basic reactions and parameters as the pack cementation process, except that the substrate to be coated is not in contact with the powder mixture. b. Thermal Evaporation-Physical Vapour Deposition (TE-PVD) is an overlay coating process conducted in a vacuum with a pressure less than 0,1 Pa wherein a source of thermal energy is used to vaporize the coating material. This process results in the condensation, or deposition, of the evaporated species onto appropriately positioned substrates. The addition of gases to the vacuum chamber during the coating process to synthesise compound coatings is an ordinary modification of the process. The use of ion or electron beams, or plasma, to activate or assist the coating's deposition is also a common modification in this technique. The use of monitors to provide in-process measurement of optical characteristics and thickness of coatings can be a feature of these processes. Specific TE-PVD processes are as follows: 1. Electron Beam PVD uses an electron beam to heat and evaporate the material which forms the coating; 2. Ion Assisted Resistive Heating PVD employs electrically resistive heating sources in combination with impinging ion beam(s) to produce a controlled and uniform flux of evaporated coating species; 3. "Laser" Vaporization uses either pulsed or continuous wave "laser" beams to vaporize the material which forms the coating; 4. Cathodic Arc Deposition employs a consumable cathode of the material which forms the coating and has an arc discharge established on the surface by a momentary contact of a ground trigger. Controlled motion of arcing erodes the cathode surface creating a highly ionised plasma. The anode can be either a cone attached to the periphery of the cathode, through an insulator, or the chamber. Substrate biasing is used for non line-of-sight deposition; N.B. This definition does not include random cathodic arc deposition with non-biased substrates. 5. Ion Plating is a special modification of a general TE-PVD process in which a plasma or an ion source is used to ionise the species to be deposited, and a negative bias is applied to the substrate in order to facilitate the extraction of the species from the plasma. The introduction of reactive species, evaporation of solids within the process chamber, and the use of monitors to provide in-process measurement of optical characteristics and thicknesses of coatings are ordinary modifications of the process. c. Pack Cementation is a surface modification coating or overlay coating process wherein a substrate is immersed in a powder mixture (a pack), that consists of: 1. The metallic powders that are to be deposited (usually aluminium, chromium, silicon or combinations thereof); 2. An activator (normally a halide salt); and 3. An inert powder, most frequently alumina. The substrate and powder mixture is contained within a retort which is heated to between 1030 K (757 °C) and 1375 K (1102 °C) for sufficient time to deposit the coating. The substrate and powder mixture is contained within a retort which is heated to between 1030 K (757 °C) and 1375 K (1102 °C) for sufficient time to deposit the coating. d. Plasma Spraying is an overlay coating process wherein a gun (spray torch) which produces and controls a plasma accepts powder or wire coating materials, melts them and propels them towards a substrate, whereon an integrally bonded coating is formed. Plasma spraying constitutes either low pressure plasma spraying or high velocity plasma spraying. N.B.1 Low pressure means less than ambient atmospheric pressure. N.B.2 High velocity refers to nozzle-exit gas velocity exceeding 750 m/s calculated at 293 K (20 °C) at 0,1 MPa. N.B.1. Low pressure means less than ambient atmospheric pressure. N.B.2. High velocity refers to nozzle-exit gas velocity exceeding 750 m/s calculated at 293 K (20 °C) at 0,1 MPa. e. Slurry Deposition is a surface modification coating or overlay coating process wherein a metallic or ceramic powder with an organic binder is suspended in a liquid and is applied to a substrate by either spraying, dipping or painting, subsequent air or oven drying, and heat treatment to obtain the desired coating. f. Sputter Deposition is an overlay coating process based on a momentum transfer phenomenon, wherein positive ions are accelerated by an electric field towards the surface of a target (coating material). The kinetic energy of the impacting ions is sufficient to cause target surface atoms to be released and deposited on an appropriately positioned substrate. N.B.1 The Table refers only to triode, magnetron or reactive sputter deposition which is used to increase adhesion of the coating and rate of deposition and to radio frequency (RF) augmented sputter deposition used to permit vaporisation of non-metallic coating materials. N.B.2 Low-energy ion beams (less than 5 keV) can be used to activate the deposition. N.B.1. The Table refers only to triode, magnetron or reactive sputter deposition which is used to increase adhesion of the coating and rate of deposition and to radio frequency (RF) augmented sputter deposition used to permit vaporisation of non-metallic coating materials. N.B.2. Low-energy ion beams (less than 5 keV) can be used to activate the deposition. g. Ion Implantation is a surface modification coating process in which the element to be alloyed is ionised, accelerated through a potential gradient and implanted into the surface region of the substrate. This includes processes in which ion implantation is performed simultaneously with electron beam physical vapour deposition or sputter deposition. PART V Category 3 CATEGORY 3 - ELECTRONICS 3ASystems, Equipment and Components Note 1: The control status of equipment and components described in 3A001 or 3A002, other than those described in 3A001.a.3. to 3A001.a.10., or 3A001.a.12. to 3A001.a.14., which are specially designed for or which have the same functional characteristics as other equipment is determined by the control status of the other equipment. Note 1: The control status of equipment and components described in 3A001 or 3A002, other than those described in 3A001.a.3. to 3A001.a.10., or 3A001.a.12. to 3A001.a.14., or 3A001.b.12, which are specially designed for or which have the same functional characteristics as other equipment is determined by the control status of the other equipment. Note 2: The control status of integrated circuits described in 3A001.a.3. to 3A001.a.9., or 3A001.a.12. to 3A001.a.14., which are unalterably programmed or designed for a specific function for another equipment is determined by the control status of the other equipment. N.B. When the manufacturer or applicant cannot determine the control status of the other equipment, the control status of the integrated circuits is determined in 3A001.a.3. to 3A001.a.9., and 3A001.a.12. to 3A001.a.14. Note 3: The status of wafers (finished or unfinished), in which the function has been determined, is to be evaluated against the parameters of 3A001.a., 3A001.b., 3A001.d., 3A001.e.4., 3A001.g., 3A001.h., or 3A001.i. 3A001Electronic items as follows: a. General purpose integrated circuits, as follows: Note: Integrated circuits include the following types: "Monolithic integrated circuits"; "Hybrid integrated circuits"; "Multichip integrated circuits"; "Film type integrated circuits", including silicon-on-sapphire integrated circuits; "Optical integrated circuits"; "Three dimensional integrated circuits"; "Monolithic Microwave Integrated Circuits" ("MMICs"). 1. Integrated circuits designed or rated as radiation hardened to withstand any of the following: a. A total dose of 5 × 103 Gy (silicon) or higher; b. A dose rate upset of 5 × 106 Gy (silicon)/s or higher; or c. A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 1013 n/cm2 or higher on silicon, or its equivalent for other materials; a. A total dose of 5 × 103 Gy (silicon) or higher; b. A dose rate upset of 5 × 106 Gy (silicon)/s or higher; or c. A fluence (integrated flux) of neutrons (1 MeV equivalent) of 5 × 1013 n/cm2 or higher on silicon, or its equivalent for other materials; Note: 3A001.a.1.c. does not control Metal Insulator Semiconductors (MIS). 2. "Microprocessor microcircuits", "microcomputer microcircuits", microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, analogue-to-digital converters, integrated circuits that contain analogue-to-digital converters and store or process the digitised data, digital-to-analogue converters, electro-optical or "optical integrated circuits" designed for "signal processing", field programmable logic devices, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, Static Random-Access Memories (SRAMs), or non-volatile memories, having any of the following: a. Rated for operation at an ambient temperature above 398 K (125 °C); b. Rated for operation at an ambient temperature below 218 K (–55 °C); or c. Rated for operation over the entire ambient temperature range from 218 K (–55 °C) to 398 K (125 °C); b. Rated for operation at an ambient temperature below 218 K (– 55 °C); or c. Rated for operation over the entire ambient temperature range from 218 K (– 55 °C) to 398 K (125 °C); Note: 3A001.a.2. does not control integrated circuits designed for civil automobiles or railway train applications. Technical Note: Non-volatile memories are memories with data retention over a period of time after a power shutdown. 3. "Microprocessor microcircuits", "microcomputer microcircuits" and microcontroller microcircuits, manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz; Note: 3A001.a.3. includes digital signal processors, digital array processors and digital coprocessors. 4. Not used; 5. Analogue-to-Digital Converter (ADC) and Digital-to-Analogue Converter (DAC) integrated circuits, as follows: a. ADCs having any of the following: N.B. SEE ALSO 3A101 1. A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1,3 Giga Samples Per Second (GSPS); 2. A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 600 Mega Samples Per Second (MSPS); 3. A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 400 MSPS; 4. A resolution of 14 bit or more, but less than 16 bit, with a "sample rate" greater than 250 MSPS; or 5. A resolution of 16 bit or more with a "sample rate" greater than 65 MSPS; 1. A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1,3 Giga Samples Per Second (GSPS); 2. A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 600 Mega Samples Per Second (MSPS); 3. A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 400 MSPS; 4. A resolution of 14 bit or more, but less than 16 bit, with a "sample rate" greater than 250 MSPS; or 5. A resolution of 16 bit or more with a "sample rate" greater than 65 MSPS; N.B. For integrated circuits that contain analogue-to-digital converters and store or process the digitised data, see 3A001.a.14. Technical Notes: 1. A resolution of n bit corresponds to a quantisation of 2n levels. 2. The resolution of the ADC is the number of bits of the digital output that represents the measured analogue input. Effective Number of Bits (ENOB) is not used to determine the resolution of the ADC. 3. For "multiple channel ADCs", the "sample rate" is not aggregated and the "sample rate" is the maximum rate of any single channel. 4. For "interleaved ADCs" or for "multiple channel ADCs" that are specified to have an interleaved mode of operation, the "sample rates" are aggregated and the "sample rate" is the maximum combined total rate of all of the interleaved channels. b. Digital-to-Analogue Converters (DAC) having any of the following: 1. A resolution of 10 bit or more but less than 12 bit, with an adjusted update rate exceeding 3500 MSPS; or 2. A resolution of 12 bit or more and having any of the following: a. An adjusted update rate exceeding 1250 MSPS but not exceeding 3500 MSPS, and having any of the following: 1. A settling time less than 9 ns to arrive at or within 0,024 % of full scale from a full scale step; or 2. A Spurious Free Dynamic Range (SFDR) greater than 68 dBc (carrier) when synthesising a full scale analogue signal of 100 MHz or the highest full scale analogue signal frequency specified below 100 MHz; or b. An adjusted update rate exceeding 3500 MSPS; Technical Notes: 1. Spurious Free Dynamic Range (SFDR) is defined as the ratio of the RMS value of the carrier frequency (maximum signal component) at the input of the DAC to the RMS value of the next largest noise or harmonic distortion component at its output. 2. SFDR is determined directly from the specification table or from the characterisation plots of SFDR versus frequency. 3. A signal is defined to be full scale when its amplitude is greater than -3 dBfs (full scale). 3. A signal is defined to be full scale when its amplitude is greater than -3 dBfs (full scale). 4. Adjusted update rate for DACs: a. For conventional (non-interpolating) DACs, the adjusted update rate is the rate at which the digital signal is converted to an analogue signal and the output analogue values are changed by the DAC. For DACs where the interpolation mode may be bypassed (interpolation factor of one), the DAC should be considered as a conventional (non-interpolating) DAC. b. For interpolating DACs (oversampling DACs), the adjusted update rate is defined as the DAC update rate divided by the smallest interpolating factor. For interpolating DACs, the adjusted update rate may be referred to by different terms including: … 21 unchanged lines … 8. Not used; 9. Neural network integrated circuits; 10. Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: a. More than 1500 terminals; b. A typical "basic gate propagation delay time" of less than 0,02 ns; or a. More than 1500 terminals; b. A typical "basic gate propagation delay time" of less than 0,02 ns; or c. An operating frequency exceeding 3 GHz; 11. Digital integrated circuits, other than those described in 3A001.a.3. to 3A001.a.10. and 3A001.a.12., based upon any compound semiconductor and having any of the following: a. An equivalent gate count of more than 3000 (2 input gates); or b. A toggle frequency exceeding 1,2 GHz; 12. Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log2 N)/20 480 ms, where N is the number of points; 12. Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log2 N) /20 480 ms, where N is the number of points; Technical Note: When N is equal to 1024 points, the formula in 3A001.a.12. gives an execution time of 500 μs. When N is equal to 1024 points, the formula in 3A001.a.12. gives an execution time of 500 μs. 13. Direct Digital Synthesizer (DDS) integrated circuits having any of the following: a. A Digital-to-Analogue Converter (DAC) clock frequency of 3,5 GHz or more and a DAC resolution of 10 bit or more, but less than 12 bit; or b. A DAC clock frequency of 1,25 GHz or more and a DAC resolution of 12 bit or more; … 18 unchanged lines … 4. For integrated circuits with "interleaved ADCs "or with "multiple channel ADCs" that are specified to have an interleaved mode of operation, the "sample rates" are aggregated and the "sample rate" is the maximum combined total rate of all of the interleaved channels. b. Microwave or millimetre wave items as follows: Technical Note: For purposes of 3A001.b., the parameter peak saturated power output may also be referred to on product data sheets as output power, saturated power output, maximum power output, peak power output, or peak envelope power output. For the purposes of 3A001.b., the parameter peak saturated power output may also be referred to on product data sheets as output power, saturated power output, maximum power output, peak power output, or peak envelope power output. 1. "Vacuum electronic devices" and cathodes, as follows: Note 1: 3A001.b.1. does not control "vacuum electronic devices" designed or rated for operation in any frequency band and having all of the following: a. Does not exceed 31,8 GHz; and b. Is "allocated by the ITU" for radio-communications services, but not for radio-determination. Note 2: 3A001.b.1. does not control non-"space-qualified" "vacuum electronic devices" having all of the following: a. An average output power equal to or less than 50 W; and b. Designed or rated for operation in any frequency band and having all of the following: 1. Exceeds 31,8 GHz but does not exceed 43,5 GHz; and 2. Is "allocated by the ITU" for radio-communications services, but not for radio-determination. a. Travelling-wave "vacuum electronic devices", pulsed or continuous wave, as follows: 1. Devices operating at frequencies exceeding 31,8 GHz; 2. Devices having a cathode heater with a turn on time to rated RF power of less than 3 seconds; 2. Devices having a cathode heater with a turn on time to rated RF power of less than 3 seconds; 3. Coupled cavity devices, or derivatives thereof, with a "fractional bandwidth" of more than 7 % or a peak power exceeding 2,5 kW; 4. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having any of the following: a. An "instantaneous bandwidth" of more than one octave, and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,5; … 20 unchanged lines … 1. A peak saturated power output greater than 10 W (40 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; or 2. A peak saturated power output greater than 5 W (37 dBm) at any frequency exceeding 8,5 GHz up to and including 16 GHz; c. Rated for operation with a peak saturated power output greater than 3 W (34,77 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz, and with a "fractional bandwidth" of greater than 10 %; d. Rated for operation with a peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; d. Rated for operation with a peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; e. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10 %; f. Rated for operation with a peak saturated power output greater than 31,62 mW (15 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10 %; g. Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5 %; or h. Rated for operation with a peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 90 GHz; h. Rated for operation with a peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 90 GHz; Note 1: Not used. Note 2: The control status of the "MMIC" whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.2.a. to 3A001.b.2.h., is determined by the lowest peak saturated power output threshold. Note 3: Notes 1 and 2 in 3A mean that 3A001.b.2. does not control "MMICs" if they are specially designed for other applications, e.g., telecommunications, radar, automobiles. 3. Discrete microwave transistors that are any of the following: a. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz and having any of the following: 1. A peak saturated power output greater than 400 W (56 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz; 2. A peak saturated power output greater than 205 W (53,12 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz; 3. A peak saturated power output greater than 115 W (50,61 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or 4. A peak saturated power output greater than 60 W (47,78 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz; b. Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz and having any of the following: 1. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; 2. A peak saturated power output greater than 15 W (41,76 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz; 3. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or 4. A peak saturated power output greater than 7 W (38,45 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz; c. Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; d. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz; e. Rated for operation with a peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 43,5 GHz; or e. Rated for operation with a peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 43,5 GHz; or f. Other than those specified in 3A001.b.3.a. to 3A001.b.3.e and rated for operation with a peak saturated power output greater than 5 W (37,0 dBm) at all frequencies exceeding 8,5 GHz up to and including 31,8 GHz; Note 1: The control status of a transistor in 3A001.b.3.a. through 3A001.b.3.e. whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.3.a. to 3A001.b.3.e., is determined by the lowest peak saturated power output threshold. Note 2: 3A001.b.3. includes bare dice, dice mounted on carriers, or dice mounted in packages. Some discrete transistors may also be referred to as power amplifiers, but the status of these discrete transistors is determined by 3A001.b.3. 4. Microwave solid state amplifiers and microwave assemblies/modules containing microwave solid state amplifiers, that are any of the following: a. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a "fractional bandwidth" greater than 15 %, and having any of the following: 1. A peak saturated power output greater than 500 W (57 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz; 2. A peak saturated power output greater than 270 W (54,3 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz; 3. A peak saturated power output greater than 200 W (53 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or 4. A peak saturated power output greater than 90 W (49,54 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz; b. Rated for operation at frequencies exceeding 6,8 GHz up to and including 31,8 GHz with a "fractional bandwidth" greater than 10 %, and having any of the following: 1. A peak saturated power output greater than 70 W (48,54 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; 1. A peak saturated power output greater than 70 W (48,45 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; 2. A peak saturated power output greater than 50 W (47 dBm) at any frequency exceeding 8,5 GHz up to and including 12 GHz; 3. A peak saturated power output greater than 30 W (44,77 dBm) at any frequency exceeding 12 GHz up to and including 16 GHz; or 4. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz; c. Rated for operation with a peak saturated power output greater than 0,5 W (27 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; d. Rated for operation with a peak saturated power output greater than 2 W (33 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10 %; e. Rated for operation at frequencies exceeding 43,5 GHz and having any of the following: 1. A peak saturated power output greater than 0,2 W (23 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10 %; 2. A peak saturated power output greater than 20 mW (13 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5 %; or 3. A peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 90 GHz; or 3. A peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 90 GHz; or f. Not used N.B.1. For "MMIC" amplifiers see 3A001.b.2. N.B.2. For transmit/receive modules and transmit modules see 3A001.b.12. N.B.3. For converters and harmonic mixers, designed to extend the operating or frequency range of signal analysers, signal generators, network analysers or microwave test receivers, see 3A001.b.7. Note 1: Not used. Note 2: The control status of an item whose rated operating frequency includes frequencies listed in more than one frequency range, as defined by 3A001.b.4.a. to 3A001.b.4.e., is determined by the lowest peak saturated power output threshold. 5. Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1,5:1 frequency band (fmax/fmin) in less than 10 μs and having any of the following: 5. Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1,5:1 frequency band (fmax/fmin) in less than 10 μs and having any of the following: a. A band-pass bandwidth of more than 0,5 % of centre frequency; or b. A band-stop bandwidth of less than 0,5 % of centre frequency; 6. Not used; 7. Converters and harmonic mixers that are any of the following: a. Designed to extend the frequency range of "signal analysers" beyond 90 GHz; b. Designed to extend the operating range of signal generators as follows: 1. Beyond 90 GHz; 2. To an output power greater than 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; c. Designed to extend the operating range of network analysers as follows: 1. Beyond 110 GHz; 2. To an output power greater than 31,62 mW (15 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 3. To an output power greater than 1 mW (0 dBm) anywhere within the frequency range exceeding 90 GHz but not exceeding 110 GHz; or d. Designed to extend the frequency range of microwave test receivers beyond 110 GHz; 8. Microwave power amplifiers containing "vacuum electronic devices" specified in 3A001.b.1. and having all of the following: a. Operating frequencies above 3 GHz; b. An average output power to mass ratio exceeding 80 W/kg; and b. An average output power to mass ratio exceeding 80 W/kg; and c. A volume of less than 400 cm3; Note: 3A001.b.8. does not control equipment designed or rated for operation in any frequency band which is "allocated by the ITU" for radio-communications services, but not for radio-determination. 9. Microwave power modules (MPM) consisting of, at least, a travelling wave "vacuum electronic device", a "monolithic microwave integrated circuit" ("MMIC") and an integrated electronic power conditioner and having all of the following: a. A turn-on time from off to fully operational in less than 10 seconds; b. A volume less than the maximum rated power in Watts multiplied by 10 cm3/W; and c. An "instantaneous bandwidth" greater than 1 octave (fmax > 2fmin) and having any of the following: 1. For frequencies equal to or less than 18 GHz, an RF output power greater than 100 W; or 2. A frequency greater than 18 GHz; Technical Notes: 1. To calculate the volume in 3A001.b.9.b., the following example is provided: for a maximum rated power of 20 W, the volume would be: 20 W × 10 cm3/W = 200 cm3. 1. To calculate the volume in 3A001.b.9.b., the following example is provided: for a maximum rated power of 20 W, the volume would be: 20 W × 10 cm3/W = 200 cm3. 2. The turn-on time in 3A001.b.9.a. refers to the time from fully-off to fully operational, i.e., it includes the warm-up time of the MPM. 10. Oscillators or oscillator assemblies, specified to operate with a single sideband (SSB) phase noise, in dBc/Hz, less (better) than -(126 + 20log10F - 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz; Technical Note: In 3A001.b.10., F is the offset from the operating frequency in Hz and f is the operating frequency in MHz. 11. Frequency synthesiser "electronic assemblies" having a "frequency switching time" as specified by any of the following: a. Less than 143 ps; b. Less than 100 μs for any frequency change exceeding 2,2 GHz within the synthesised frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz; c. Not used; d. Less than 500 μs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 31,8 GHz but not exceeding 37 GHz; e. Less than 100 μs for any frequency change exceeding 2,2 GHz within the synthesised frequency range exceeding 37 GHz but not exceeding 90 GHz; or f. Not used; e. Less than 100 μs for any frequency change exceeding 2,2 GHz within the synthesised frequency range exceeding 37 GHz but not exceeding 75 GHz; f. Less than 100 μs for any frequency change exceeding 5,0 GHz within the synthesised frequency range exceeding 75 GHz but not exceeding 90 GHz; or g. Less than 1 ms within the synthesised frequency range exceeding 90 GHz; Technical Note: A frequency synthesiser is any kind of frequency source, regardless of the actual technique used, providing a multiplicity of simultaneous or alternative output frequencies, from one or more outputs, controlled by, derived from or disciplined by a lesser number of standard (or master) frequencies. N.B. For general purpose "signal analysers", signal generators, network analysers and microwave test receivers, see 3A002.c., 3A002.d., 3A002.e. and 3A002.f., respectively. 12. Transmit/receive modules, transmit/receive MMICs, transmit modules, and transmit MMICs, rated for operation at frequencies above 2,7 GHz and having all of the following: a. A peak saturated power output (in watts), Psat, greater than 505,62 divided by the maximum operating frequency (in GHz) squared [Psat > 505,62 W*GHz2/fGHz2] for any channel; a. A peak saturated power output (in watts), Psat, greater than 505,62 divided by the maximum operating frequency (in GHz) squared [Psat>505,62 W*GHz2/fGHz2] for any channel; b. A "fractional bandwidth" of 5 % or greater for any channel; c. Any planar side with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d ≤ 15cm*GHz*N/fGHz] where N is the number of transmit or transmit/receive channels; and d. An electronically variable phase shifter per channel. Technical Notes: 1. A transmit/receive module: is a multifunction "electronic assembly" that provides bi-directional amplitude and phase control for transmission and reception of signals. 2. A transmit module: is an "electronic assembly" that provides amplitude and phase control for transmission of signals. 3. A transmit/receive MMIC: is a multifunction "MMIC" that provides bi-directional amplitude and phase control for transmission and reception of signals. 4. A transmit MMIC: is a "MMIC" that provides amplitude and phase control for transmission of signals. 5. 2,7 GHz should be used as the lowest operating frequency (fGHz) in the formula in 3A001.b.12.c. for transmit/receive or transmit modules that have a rated operation range extending downward to 2,7 GHz and below [d≤15cm*GHz*N/2,7 GHz]. 6. 3A001.b.12. applies to transmit/receive modules or transmit modules with or without a heat sink. The value of d in 3A001.b.12.c. does not include any portion of the transmit/receive module or transmit module that functions as a heat sink. 7. Transmit/receive modules, or transmit modules, or transmit/receive MMICs or transmit MMICs may or may not have N integrated radiating antenna elements where N is the number of transmit or transmit/receive channels. c. Acoustic wave devices as follows and specially designed components therefor: 1. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having any of the following: a. A carrier frequency exceeding 6 GHz; b. A carrier frequency exceeding 1 GHz, but not exceeding 6 GHz and having any of the following: 1. A frequency side-lobe rejection exceeding 65 dB; 2. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100; 3. A bandwidth greater than 250 MHz; or 4. A dispersive delay of more than 10 μs; or 4. A dispersive delay of more than 10 μs; or c. A carrier frequency of 1 GHz or less and having any of the following: 1. A product of the maximum delay time and the bandwidth (time in μs and bandwidth in MHz) of more than 100; 2. A dispersive delay of more than 10 μs; or 2. A dispersive delay of more than 10 μs; or 3. A frequency side-lobe rejection exceeding 65 dB and a bandwidth greater than 100 MHz; Technical Note: Frequency side-lobe rejection is the maximum rejection value specified in data sheet. 2. Bulk (volume) acoustic wave devices which permit the direct processing of signals at frequencies exceeding 6 GHz; 3. Acoustic-optic "signal processing" devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution; Note: 3A001.c. does not control acoustic wave devices that are limited to a single band pass, low pass, high pass or notch filtering, or resonating function. d. Electronic devices and circuits containing components, manufactured from "superconductive" materials, specially designed for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents and having any of the following: 1. Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10–14 J; or 1. Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10-14 J; or 2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10000; e. High energy devices as follows: 1. Cells as follows: a. Primary cells having any of the following at 20 °C; 1. Energy density exceeding 550 Wh/kg and a continuous power density exceeding 50 W/kg; or 2. Energy density exceeding 50 Wh/kg and a continuous power density exceeding 350 W/kg; or b. Secondary cells having an energy density exceeding 350 Wh/kg at 20 °C; 1. Energy density exceeding 550 Wh/kg and a continuous power density exceeding 50 W/kg; or 2. Energy density exceeding 50 Wh/kg and a continuous power density exceeding 350 W/kg; or b. Secondary cells having an energy density exceeding 350 Wh/kg at 20 °C; Technical Notes: 1. For the purpose of 3A001.e.1., energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours (Ah) divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in ohms and the mass in kilograms. 2. For the purpose of 3A001.e.1., a cell is defined as an electrochemical device, which has positive and negative electrodes, an electrolyte, and is a source of electrical energy. It is the basic building block of a battery. 3. For the purpose of 3A001.e.1.a., a primary cell is a cell that is not designed to be charged by any other source. 4. For the purpose of 3A001.e.1.b., a secondary cell is a cell that is designed to be charged by an external electrical source. 5. For the purpose of 3A001.e.1.a., continuous power density (W/kg) is calculated from the nominal voltage multiplied by the specified maximum continuous discharge current in ampere (A) divided by the mass in kilograms. Continuous power density is also referred to as specific power. Note: 3A001.e.1. does not control batteries, including single-cell batteries. 2. High energy storage capacitors as follows: N.B. SEE ALSO 3A201.a. and the Military Goods Controls. a. Capacitors with a repetition rate of less than 10 Hz (single shot capacitors) and having all of the following: 1. A voltage rating equal to or more than 5 kV; 2. An energy density equal to or more than 250 J/kg; and 3. A total energy equal to or more than 25 kJ; 3. A total energy equal to or more than 25 kJ; b. Capacitors with a repetition rate of 10 Hz or more (repetition rated capacitors) and having all of the following: 1. A voltage rating equal to or more than 5 kV; 2. An energy density equal to or more than 50 J/kg; 3. A total energy equal to or more than 100 J; and 4. A charge/discharge cycle life equal to or more than 10000; 3. "Superconductive" electromagnets and solenoids, specially designed to be fully charged or discharged in less than one second and having all of the following: N.B. SEE ALSO 3A201.b. Note: 3A001.e.3. does not control "superconductive" electromagnets or solenoids specially designed for Magnetic Resonance Imaging (MRI) medical equipment. a. Energy delivered during the discharge exceeding 10 kJ in the first second; a. Energy delivered during the discharge exceeding 10 kJ in the first second; b. Inner diameter of the current carrying windings of more than 250 mm; and c. Rated for a magnetic induction of more than 8 T or "overall current density" in the winding of more than 300 A/mm2; 4. Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are "space-qualified", having a minimum average efficiency exceeding 20 % at an operating temperature of 301 K (28 °C) under simulated AM0 illumination with an irradiance of 1367 watts per square metre (W/m2); Technical Note: AM0, or Air Mass Zero, refers to the spectral irradiance of sun light in the earth's outer atmosphere when the distance between the earth and sun is one astronomical unit (AU). f. Rotary input type absolute position encoders having an "accuracy" equal to or less (better) than 1,0 second of arc and specially designed encoder rings, discs or scales therefor; f. Rotary input type absolute position encoders having an "accuracy" equal to or less (better) than 1,0 second of arc and specially designed encoder rings, discs or scales therefor; g. Solid-state pulsed power switching thyristor devices and thyristor modules, using either electrically, optically, or electron radiation controlled switch methods and having any of the following: 1. A maximum turn-on current rate of rise (di/dt) greater than 30000 A/μs and off-state voltage greater than 1100 V; or 2. A maximum turn-on current rate of rise (di/dt) greater than 2000 A/μs and having all of the following: a. An off-state peak voltage equal to or greater than 3000 V; and b. A peak (surge) current equal to or greater than 3000 A. Note 1: 3A001.g. includes: Silicon Controlled Rectifiers (SCRs) Electrical Triggering Thyristors (ETTs) Light Triggering Thyristors (LTTs) Integrated Gate Commutated Thyristors (IGCTs) Gate Turn-off Thyristors (GTOs) MOS Controlled Thyristors (MCTs) Solidtrons Note 2: 3A001.g. does not control thyristor devices and thyristor modules incorporated into equipment designed for civil railway or "civil aircraft" applications. Technical Note: For the purposes of 3A001.g., a thyristor module contains one or more thyristor devices. h. Solid-state power semiconductor switches, diodes, or modules, having all of the following: 1. Rated for a maximum operating junction temperature greater than 488 K (215 °C); 1. Rated for a maximum operating junction temperature greater than 488 K (215 °C); 2. Repetitive peak off-state voltage (blocking voltage) exceeding 300 V; and 3. Continuous current greater than 1 A. Note 1: Repetitive peak off-state voltage in 3A001.h. includes drain to source voltage, collector to emitter voltage, repetitive peak reverse voltage and peak repetitive off-state blocking voltage. … 41 unchanged lines … b. Not used; c. "Signal analysers" as follows: 1. "Signal analysers" having a 3 dB resolution bandwidth (RBW) exceeding 40 MHz anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; 2. "Signal analysers" having Displayed Average Noise Level (DANL) less (better) than -150 dBm/Hz anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 2. "Signal analysers" having a Displayed Average Noise Level (DANL) less (better) than -150 dBm/Hz anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 3. "Signal analysers" having a frequency exceeding 90 GHz; 4. "Signal analysers" having all of the following: a. Real-time bandwidth exceeding 170 MHz; and b. Having any of the following: 1. 100 % probability of discovery with less than a 3 dB reduction from full amplitude due to gaps or windowing effects of signals having a duration of 15 μs or less; or 2. A frequency mask trigger function with 100 % probability of trigger (capture) for signals having a duration of 15 μs or less; Technical Notes: 1. Real-time bandwidth is the widest frequency range for which the analyser can continuously transform time-domain data entirely into frequency-domain results, using a Fourier or other discrete time transform that processes every incoming time point, without a reduction of measured amplitude of more than 3 dB below the actual signal amplitude caused by gaps or windowing effects, while outputting or displaying the transformed data. 2. Probability of discovery in 3A002.c.4.b.1. is also referred to as probability of intercept or probability of capture. 3. For the purposes of 3A002.c.4.b.1., the duration for 100 % probability of discovery is equivalent to the minimum signal duration necessary for the specified level measurement uncertainty. 4. A frequency mask trigger is a mechanism where the trigger function is able to select a frequency range to be triggered on as a subset of the acquisition bandwidth while ignoring other signals that may also be present within the same acquisition bandwidth. A frequency mask trigger may contain more than one independent set of limits. Note: 3A002.c.4. does not control those "signal analysers" using only constant percentage bandwidth filters (also known as octave or fractional octave filters). 5. Not used; d. Signal generators having any of the following: 1. Specified to generate pulse-modulated signals having all of the following, anywhere within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz: a. Pulse duration of less than 25 ns; and b. On/off ratio equal to or exceeding 65 dB; 2. An output power exceeding 100 mW (20 dBm) anywhere within the frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 3. A "frequency switching time" as specified by any of the following: a. Not used; b. Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz; b. Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz; c. Not used; d. Less than 500 μs for any frequency change exceeding 550 MHz within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; or e. Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 37 GHz but not exceeding 90 GHz; d. Less than 500 μs for any frequency change exceeding 550 MHz within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; e. Less than 100 μs for any frequency change exceeding 2,2 GHz within the frequency range exceeding 37 GHz but not exceeding 75 GHz; or f. Not used; 4. Single sideband (SSB) phase noise, in dBc/Hz, specified as being any of the following: a. Less (better) than -(126 + 20log10F - 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz anywhere within the frequency range exceeding 3,2 GHz but not exceeding 90 GHz; or b. Less (better) than -(206 - 20log10f) anywhere within the range of 10 kHz< F≤ 100 kHz anywhere within the frequency range exceeding 3,2 GHz but not exceeding 90 GHz; g. Less than 100 μs for any frequency change exceeding 5,0 GHz within the frequency range exceeding 75 GHz but not exceeding 90 GHz; 4. A single sideband (SSB) phase noise, in dBc/Hz, specified as being any of the following: a. Less (better) than -(126 + 20log10F - 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz anywhere within the frequency range exceeding 3,2 GHz but not exceeding 90 GHz; or b. Less (better) than -(206 - 20log10f) anywhere within the range of 10 kHz< F≤ 100 kHz anywhere within the frequency range exceeding 3,2 GHz but not exceeding 90 GHz; Technical Note: In 3A002.d.4., F is the offset from the operating frequency in Hz and f is the operating frequency in MHz; 5. An RF modulation bandwidth of digital baseband signals as specified by any of the following: a. Exceeding 2,2 GHz within the frequency range exceeding 4,8 GHz but not exceeding 31,8 GHz; b. Exceeding 550 MHz within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; or c. Exceeding 2,2 GHz within the frequency range exceeding 37 GHz but not exceeding 90 GHz; or b. Exceeding 550 MHz within the frequency range exceeding 31,8 GHz but not exceeding 37 GHz; c. Exceeding 2,2 GHz within the frequency range exceeding 37 GHz but not exceeding 75 GHz; or d. Exceeding 5,0 GHz within the frequency range exceeding 75 GHz but not exceeding 90 GHz; or Technical Note: RF modulation bandwidth is the Radio Frequency (RF) bandwidth occupied by a digitally encoded baseband signal modulated onto an RF signal. It is also referred to as information bandwidth or vector modulation bandwidth. I/Q digital modulation is the technical method for producing a vector-modulated RF output signal, and that output signal is typically specified as having an RF modulation bandwidth. 6. A maximum frequency exceeding 90 GHz; Note 1: For the purpose of 3A002.d., signal generators include arbitrary waveform and function generators. Note 2: 3A002.d. does not control equipment in which the output frequency is either produced by the addition or subtraction of two or more crystal oscillator frequencies, or by an addition or subtraction followed by a multiplication of the result. Note 1 For the purpose of 3A002.d., signal generators include arbitrary waveform and function generators. Note 2 3A002.d. does not control equipment in which the output frequency is either produced by the addition or subtraction of two or more crystal oscillator frequencies, or by an addition or subtraction followed by a multiplication of the result. Technical Notes: 1. The maximum frequency of an arbitrary waveform or function generator is calculated by dividing the sample rate, in samples/second, by a factor of 2,5. 2. For the purposes of 3A002.d.1.a, pulse duration is defined as the time interval from the point on the leading edge that is 50 % of the pulse amplitude to the point on the trailing edge that is 50 % of the pulse amplitude. e. Network analysers having any of the following: 1. An output power exceeding 31,62 mW (15 dBm) anywhere within the operating frequency range exceeding 43,5 GHz but not exceeding 90 GHz; 2. An output power exceeding 1 mW (0 dBm) anywhere within the operating frequency range exceeding 90 GHz but not exceeding 110 GHz; 3. Nonlinear vector measurement functionality at frequencies exceeding 50 GHz but not exceeding 110 GHz; or Technical Note: Nonlinear vector measurement functionality is an instrument’s ability to analyse the test results of devices driven into the large-signal domain or the non-linear distortion range. 4. A maximum operating frequency exceeding 110 GHz; f. Microwave test receivers having all of the following: 1. A maximum operating frequency exceeding 110 GHz; and 2. Being capable of measuring amplitude and phase simultaneously; g. Atomic frequency standards being any of the following: 1. "Space-qualified"; 2. Non-rubidium and having a long-term stability less (better) than 1 × 10–11/month; or 2. Non-rubidium and having a long-term stability less (better) than 1 × 10-11/month; or 3. Non-"space-qualified" and having all of the following: a. Being a rubidium standard; b. Long-term stability less (better) than 1 × 10–11/month; and c. Total power consumption of less than 1 W; b. Long-term stability less (better) than 1 × 10-11/month; and c. Total power consumption of less than 1 W; h. "Electronic assemblies", modules, or equipment, specified to perform all of the following: 1. Analogue-to-digital conversions meeting any of the following: a. A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1,3 Giga Samples Per Second (GSPS); … 37 unchanged lines … 4. Magnetic field uniform to better than 1 % over the central 50 % of the inner volume; Note: 3A201.b. does not control magnets specially designed for and exported as parts of medical nuclear magnetic resonance (NMR) imaging systems. The phrase as part of does not necessarily mean physical part in the same shipment; separate shipments from different sources are allowed, provided the related export documents clearly specify that the shipments are dispatched as part of the imaging systems. c. Flash X-ray generators or pulsed electron accelerators having either of the following sets of characteristics: 1. a. An accelerator peak electron energy of 500 keV or greater but less than 25 MeV; and 1. a. An accelerator peak electron energy of 500 keV or greater but less than 25 MeV; and b. With a figure of merit (K) of 0,25 or greater; or 2. a. An accelerator peak electron energy of 25 MeV or greater; and b. A peak power greater than 50 MW. Note: 3A201.c. does not control accelerators that are component parts of devices designed for purposes other than electron beam or X-ray radiation (electron microscopy, for example) nor those designed for medical purposes. Technical Notes: 1. The figure of merit (K) is defined as: K = 1,7 × 103V2,65Q K = 1,7 × 103V2,65Q V is the peak electron energy in million electron volts. If the accelerator beam pulse duration is less than or equal to 1 μs, then Q is the total accelerated charge in Coulombs. If the accelerator beam pulse duration is greater than 1 μs, then Q is the maximum accelerated charge in 1 μs. Q equals the integral of i with respect to t, over the lesser of 1 μs or the time duration of the beam pulse (Q = ∫ idt), where i is beam current in amperes and t is time in seconds. 2. Peak power = (peak potential in volts) × (peak beam current in amperes). 3. In machines based on microwave accelerating cavities, the time duration of the beam pulse is the lesser of 1 μs or the duration of the bunched beam packet resulting from one microwave modulator pulse. If the accelerator beam pulse duration is less than or equal to 1 μs, then Q is the total accelerated charge in Coulombs. If the accelerator beam pulse duration is greater than 1 μs, then Q is the maximum accelerated charge in 1 μs. Q equals the integral of i with respect to t, over the lesser of 1 μs or the time duration of the beam pulse (Q = ∫ idt), where i is beam current in amperes and t is time in seconds. 2. Peak power = (peak potential in volts) × (peak beam current in amperes). 3. In machines based on microwave accelerating cavities, the time duration of the beam pulse is the lesser of 1 μs or the duration of the bunched beam packet resulting from one microwave modulator pulse. 4. In machines based on microwave accelerating cavities, the peak beam current is the average current in the time duration of a bunched beam packet. 3A225Frequency changers or generators, other than those specified in 0B001.b.13., usable as a variable or fixed frequency motor drive, having all of the following characteristics: N.B.1. "Software" specially designed to enhance or release the performance of a frequency changer or generator to meet the characteristics of 3A225 is specified in 3D225. … 19 unchanged lines … 1. Containing three or more electrodes; 2. Anode peak voltage rating of 2,5 kV or more; 3. Anode peak current rating of 100 A or more; and 4. Anode delay time of 10 μs or less; 4. Anode delay time of 10 μs or less; Note: 3A228.a. includes gas krytron tubes and vacuum sprytron tubes. b. Triggered spark-gaps having both of the following characteristics: 1. An anode delay time of 15 μs or less; and 1. An anode delay time of 15 μs or less; and 2. Rated for a peak current of 500 A or more; c. Modules or assemblies with a fast switching function, other than those specified in 3A001.g. or 3A001.h., having all of the following characteristics: 1. Anode peak voltage rating greater than 2 kV; 2. Anode peak current rating of 500 A or more; and 3. Turn-on time of 1 μs or less. 3. Turn-on time of 1 μs or less. 3A229High-current pulse generators as follows: N.B. SEE ALSO MILITARY GOODS CONTROLS. a. Detonator firing sets (initiator systems, firesets), including electronically-charged, explosively-driven and optically-driven firing sets, other than those specified in 1A007.a., designed to drive multiple controlled detonators specified in 1A007.b.; b. Modular electrical pulse generators (pulsers) having all of the following characteristics: 1. Designed for portable, mobile, or ruggedized-use; 2. Capable of delivering their energy in less than 15 μs into loads of less than 40 ohms; 2. Capable of delivering their energy in less than 15 μs into loads of less than 40 ohms; 3. Having an output greater than 100 A; 4. No dimension greater than 30 cm; 5. Weight less than 30 kg; and 6. Specified for use over an extended temperature range 223 K (–50 °C) to 373 K (100 °C) or specified as suitable for aerospace applications. 6. Specified for use over an extended temperature range 223 K (– 50 °C) to 373 K (100 °C) or specified as suitable for aerospace applications. Note: 3A229.b. includes xenon flash-lamp drivers. c. Micro-firing units having all of the following characteristics: 1. No dimension greater than 35 mm; 2. Voltage rating of equal to or greater than 1 kV; and 3. Capacitance of equal to or greater than 100 nF. 3A230High-speed pulse generators, and pulse heads therefor, having both of the following characteristics: a. Output voltage greater than 6 V into a resistive load of less than 55 ohms; and b. Pulse transition time less than 500 ps. b. Pulse transition time less than 500 ps. Technical Notes: 1. In 3A230, pulse transition time is defined as the time interval between 10 % and 90 % voltage amplitude. 2. Pulse heads are impulse forming networks designed to accept a voltage step function and shape it into a variety of pulse forms that can include rectangular, triangular, step, impulse, exponential, or monocycle types. Pulse heads can be an integral part of the pulse generator, they can be a plug-in module to the device or they can be an externally connected device. 3A231Neutron generator systems, including tubes, having both of the following characteristics: a. Designed for operation without an external vacuum system; and b. Utilising any of the following: 1. Electrostatic acceleration to induce a tritium-deuterium nuclear reaction; or 2. Electrostatic acceleration to induce a deuterium-deuterium nuclear reaction and capable of an output of 3 × 109 neutrons/s or greater. 2. Electrostatic acceleration to induce a deuterium-deuterium nuclear reaction and capable of an output of 3 × 109 neutrons/s or greater. 3A232Multipoint initiation systems, other than those specified in 1A007, as follows: N.B. SEE ALSO MILITARY GOODS CONTROLS. N.B. See 1A007.b. for detonators. a. Not used; b. Arrangements using single or multiple detonators designed to nearly simultaneously initiate an explosive surface over an area greater than 5000 mm2 from a single firing signal with an initiation timing spread over the surface of less than 2,5 μs. b. Arrangements using single or multiple detonators designed to nearly simultaneously initiate an explosive surface over an area greater than 5000 mm2 from a single firing signal with an initiation timing spread over the surface of less than 2,5 μs. Note: 3A232 does not control detonators using only primary explosives, such as lead azide. 3A233Mass spectrometers, other than those specified in 0B002.g., capable of measuring ions of 230 u or greater and having a resolution of better than 2 parts in 230, as follows, and ion sources therefor: a. Inductively coupled plasma mass spectrometers (ICP/MS); b. Glow discharge mass spectrometers (GDMS); c. Thermal ionisation mass spectrometers (TIMS); d. Electron bombardment mass spectrometers having both of the following features: 1. A molecular beam inlet system that injects a collimated beam of analyte molecules into a region of the ion source where the molecules are ionised by an electron beam; and 2. One or more cold traps that can be cooled to a temperature of 193 K (–80 °C); 2. One or more cold traps that can be cooled to a temperature of 193 K (– 80 °C); e. Not used; f. Mass spectrometers equipped with a microfluorination ion source designed for actinides or actinide fluorides. Technical Notes: 1. Electron bombardment mass spectrometers in 3A233.d. are also known as electron impact mass spectrometers or electron ionisation mass spectrometers. 2. In 3A233.d.2., a cold trap is a device that traps gas molecules by condensing or freezing them on cold surfaces. For the purposes of 3A233.d.2., a closed-loop gaseous helium cryogenic vacuum pump is not a cold trap. 3A234Striplines to provide low inductance path to detonators with the following characteristics: a. Voltage rating greater than 2 kV; and b. Inductance of less than 20 nH. 3BTest, Inspection and Production Equipment 3B001Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor: N.B. SEE ALSO 2B226 a. Equipment designed for epitaxial growth as follows: 1. Equipment designed or modified to produce a layer of any material other than silicon with a thickness uniform to less than ± 2,5 % across a distance of 75 mm or more; 1. Equipment designed or modified to produce a layer of any material other than silicon with a thickness uniform to less than ± 2,5 % across a distance of 75 mm or more; Note: 3B001.a.1. includes Atomic Layer Epitaxy (ALE) equipment. 2. Metal Organic Chemical Vapour Deposition (MOCVD) reactors designed for compound semiconductor epitaxial growth of material having two or more of the following elements: aluminium, gallium, indium, arsenic, phosphorus, antimony, or nitrogen; 3. Molecular beam epitaxial growth equipment using gas or solid sources; b. Equipment designed for ion implantation and having any of the following: 1. Not used; 2. Being designed and optimised to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant; 2. Being designed and optimised to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant; 3. Direct write capability; 4. A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material "substrate"; or 5. Being designed and optimised to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material "substrate" heated to 600 °C or greater; 5. Being designed and optimised to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material "substrate" heated to 600 °C or greater; c. Not used; d. Not used; e. Automatic loading multi-chamber central wafer handling systems having all of the following: 1. Interfaces for wafer input and output, to which more than two functionally different semiconductor process tools specified in 3B001.a.1., 3B001.a.2., 3B001.a.3. or 3B001.b. are designed to be connected; and 2. Designed to form an integrated system in a vacuum environment for sequential multiple wafer processing; Note: 3B001.e. does not control automatic robotic wafer handling systems specially designed for parallel wafer processing. Technical Notes: 1. For the purpose of 3B001.e., semiconductor process tools refers to modular tools that provide physical processes for semiconductor production that are functionally different, such as deposition, implant or thermal processing. 2. For the purpose of 3B001.e., sequential multiple wafer processing means the capability to process each wafer in different semiconductor process tools, such as by transferring each wafer from one tool to a second tool and on to a third tool with the automatic loading multi-chamber central wafer handling systems. f. Lithography equipment as follows: 1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following: a. A light source wavelength shorter than 193 nm; or b. Capable of producing a pattern with a 'Minimum Resolvable Feature size' (MRF) of 45 nm or less; a. A light source wavelength shorter than 193 nm; or b. Capable of producing a pattern with a Minimum Resolvable Feature size (MRF) of 45 nm or less; Technical Note: The 'Minimum Resolvable Feature size' (MRF) is calculated by the following formula: The Minimum Resolvable Feature size (MRF) is calculated by the following formula: MRFan exposure light source wavelength in nm K factornumerical aperture where the K factor = 0,35 2. Imprint lithography equipment capable of producing features of 45 nm or less; 2. Imprint lithography equipment capable of producing features of 45 nm or less; Note: 3B001.f.2. includes: Micro contact printing tools Hot embossing tools Nano-imprint lithography tools Step and flash imprint lithography (S-FIL) tools 3. Equipment specially designed for mask making having all of the following: a. A deflected focussed electron beam, ion beam or "laser" beam; and b. Having any of the following: 1. A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or 1. A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or 2. Not used; 3. A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask; 3. A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask; 4. Equipment designed for device processing using direct writing methods, having all of the following: a. A deflected focused electron beam; and b. Having any of the following: 1. A minimum beam size equal to or smaller than 15 nm; or 2. An overlay error less than 27 nm (mean + 3 sigma); 1. A minimum beam size equal to or smaller than 15 nm; or 2. An overlay error less than 27 nm (mean + 3 sigma); g. Masks and reticles, designed for integrated circuits specified in 3A001; h. Multi-layer masks with a phase shift layer not specified in 3B001.g. and designed to be used by lithography equipment having a light source wavelength less than 245 nm; Note: 3B001.h. does not control multi-layer masks with a phase shift layer designed for the fabrication of memory devices not specified in 3A001. N.B. For masks and reticles, specially designed for optical sensors, see 6B002. i. Imprint lithography templates designed for integrated circuits specified in 3A001. j. Mask "substrate blanks" with multilayer reflector structure consisting of molybdenum and silicon, and having all of the following: 1. Specially designed for Extreme Ultraviolet (EUV) lithography; and 2. Compliant with SEMI Standard P37. Technical Note: Extreme Ultraviolet (EUV) refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm. 3B002Test equipment specially designed for testing finished or unfinished semiconductor devices as follows and specially designed components and accessories therefor: a. For testing S-parameters of items specified in 3A001.b.3.; b. Not used; c. For testing items specified in 3A001.b.2. 3CMaterials 3C001Hetero-epitaxial materials consisting of a "substrate" having stacked epitaxially grown multiple layers of any of the following: a. Silicon (Si); b. Germanium (Ge); c. Silicon carbide (SiC); or d. "III/V compounds" of gallium or indium. c. Silicon carbide (SiC); d. "III/V compounds" of gallium or indium; e. Gallium Oxide (Ga2O3); or f. Diamond. Note: 3C001.d. does not control a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers. 3C002Resist materials as follows and "substrates" coated with the following resists: a. Resists designed for semiconductor lithography as follows: 1. Positive resists adjusted (optimised) for use at wavelengths less than 193 nm but equal to or greater than 15 nm; 2. Resists adjusted (optimised) for use at wavelengths less than 15 nm but greater than 1 nm; b. All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better; b. All resists designed for use with electron beams or ion beams, with a sensitivity of 0,01 μcoulomb/mm2 or better; c. Not used; d. All resists optimised for surface imaging technologies; e. All resists designed or optimised for use with imprint lithography equipment specified in 3B001.f.2. that use either a thermal or photo-curable process. 3C003Organo-inorganic compounds as follows: a. Organo-metallic compounds of aluminium, gallium or indium, having a purity (metal basis) better than 99,999 %; b. Organo-arsenic, organo-antimony and organo-phosphorus compounds, having a purity (inorganic element basis) better than 99,999 %. Note: 3C003 only controls compounds whose metallic, partly metallic or non-metallic element is directly linked to carbon in the organic part of the molecule. 3C004Hydrides of phosphorus, arsenic or antimony, having a purity better than 99,999 %, even diluted in inert gases or hydrogen. Note: 3C004 does not control hydrides containing 20 % molar or more of inert gases or hydrogen. 3C005High resistivity materials as follows: a. Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN) or aluminium gallium nitride (AlGaN) semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10000 ohm-cm at 20 °C; b. Polycrystalline "substrates" or polycrystalline ceramic "substrates", having resistivities greater than 10000 ohm-cm at 20 °C and having at least one non-epitaxial single-crystal layer of silicon (Si), silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), or aluminium gallium nitride (AlGaN) on the surface of the "substrate". 3C006Materials, not specified in 3C001, consisting of a "substrate" specified in 3C005 with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride or aluminium gallium nitride. a. Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3) or diamond semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10000 ohm-cm at 20 °C; b. Polycrystalline "substrates" or polycrystalline ceramic "substrates", having resistivities greater than 10000 ohm-cm at 20 °C and having at least one non-epitaxial single-crystal layer of silicon (Si), silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3) or diamond on the surface of the "substrate". 3C006Materials, not specified in 3C001, consisting of a "substrate" specified in 3C005 with at least one epitaxial layer of silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3) or diamond. 3DSoftware 3D001"Software" specially designed for the "development" or "production" of equipment specified in 3A001.b. to 3A002.h. or 3B. 3D002"Software" specially designed for the "use" of equipment specified in 3B001.a. to f., 3B002 or 3A225 3D003Computational lithography "software" specially designed for the "development" of patterns on EUV-lithography masks or reticles. Technical Note: Computational lithography is the use of computer modelling to predict, correct, optimise and verify imaging performance of the lithography process over a range of patterns, processes, and system conditions. 3D004"Software" specially designed for the "development" of equipment specified in 3A003. 3D005"Software" specially designed to restore normal operation of a microcomputer, "microprocessor microcircuit" or "microcomputer microcircuit" within 1 ms after an Electromagnetic Pulse (EMP) or Electrostatic Discharge (ESD) disruption, without loss of continuation of operation. 3D006Electronic Computer-Aided Design (ECAD) "software" specially designed for the "development" of integrated circuits having any "Gate-All-Around Field-Effect Transistor" ("GAAFET") structure, and having any of the following: a. Specially designed for implementing Register Transfer Level (RTL) to Geometrical Database Standard II (GDSII) or equivalent standard; or b. Specially designed for optimisation of power or timing rules. Technical Notes: 1. Electronic Computer-Aided Design (ECAD) is a category of "software" tools used for designing, analysing, optimising, and validating the performance of integrated circuit or printed circuit board. 2. Register Transfer Level (RTL) is a design abstraction which models a synchronous digital circuit in terms of the flow of digital signals between hardware registers, and the logical operations performed on those signals. 3. Geometrical Database Standard II (GDSII) is a database file format for data exchange of integrated circuit or integrated circuit layout artwork. 3D101"Software" specially designed or modified for the "use" of equipment specified in 3A101.b. 3D225"Software" specially designed to enhance or release the performance of frequency changers or generators to meet the characteristics of 3A225. 3ETechnology 3E001"Technology" according to the General Technology Note for the "development" or "production" of equipment or materials specified in 3A, 3B or 3C; Note 1: 3E001 does not control "technology" for equipment or components specified in 3A003. Note 2: 3E001 does not control "technology" for integrated circuits specified in 3A001.a.3. to 3A001.a.12., having all of the following: a. Using "technology" at or above 0,130 μm; and a. Using "technology" at or above 0,130 μm; and b. Incorporating multi-layer structures with three or fewer metal layers. Note 3: 3E001 does not control Process Design Kits (PDKs) unless they include libraries implementing functions or technologies for items specified in 3A001. Technical Note: A Process Design Kit (PDK) is a software tool provided by a semiconductor manufacturer to ensure that the required design practices and rules are taken into account in order to successfully produce a specific integrated circuit design in a specific semiconductor process, in accordance with technological and manufacturing constraints (each semiconductor manufacturing process has its particular PDK). 3E002"Technology" according to the General Technology Note, other than that specified in 3E001, for the "development" or "production" of a "microprocessor microcircuit", "microcomputer microcircuit" or microcontroller microcircuit core, having an arithmetic logic unit with an access width of 32 bits or more and any of the following features or characteristics: 3E002"Technology" according to the General Technology Note, other than that specified in 3E001, for the "development" or "production" of a "microprocessor microcircuit", "microcomputer microcircuit" or microcontroller microcircuit core, having an arithmetic logic unit with an access width of 32 bits or more and any of the following features or characteristics: a. A vector processor unit designed to perform more than two calculations on floating-point vectors (one-dimensional arrays of 32-bit or larger numbers) simultaneously; Technical Note: A vector processor unit is a processor element with built-in instructions that perform multiple calculations on floating-point vectors (one-dimensional arrays of 32-bit or larger numbers) simultaneously, having at least one vector arithmetic logic unit and vector registers of at least 32 elements each. b. Designed to perform more than four 64-bit or larger floating-point operation results per cycle; or c. Designed to perform more than eight 16-bit fixed-point multiply-accumulate results per cycle (e.g., digital manipulation of analogue information that has been previously converted into digital form, also known as digital "signal processing"). Technical Notes: 1. For the purpose of 3E002.a. and 3E002.b., floating-point is defined by IEEE-754. 2. For the purpose of 3E002.c., fixed-point refers to a fixed-width real number with both an integer component and a fractional component, and which does not include integer-only formats. Note 1: 3E002 does not control "technology" for multimedia extensions. Note 2: 3E002 does not control "technology" for micro-processor cores, having all of the following: a. Using "technology" at or above 0,130 μm; and a. Using "technology" at or above 0,130 μm; and b. Incorporating multi-layer structures with five or fewer metal layers. Note 3: 3E002 includes "technology" for the "development" or "production" of digital signal processors and digital array processors. 3E003Other "technology" for the "development" or "production" of the following: a. Vacuum microelectronic devices; b. Hetero-structure semiconductor electronic devices such as high electron mobility transistors (HEMT), hetero-bipolar transistors (HBT), quantum well and super lattice devices; Note: 3E003.b. does not control "technology" for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz. Note: 3E003.b. does not control "technology" for high electron mobility transistors (HEMT) operating at frequencies lower than 31,8 GHz and hetero-junction bipolar transistors (HBT) operating at frequencies lower than 31,8 GHz c. "Superconductive" electronic devices; d. Substrates of films of diamond for electronic components. d. Substrates of diamond for electronic components; e. Substrates of silicon-on-insulator (SOI) for integrated circuits in which the insulator is silicon dioxide; f. Substrates of silicon carbide for electronic components; g. "Vacuum electronic devices" operating at frequencies of 31,8 GHz or higher. 3E004"Technology" "required" for the slicing, grinding and polishing of 300 mm diameter silicon wafers to achieve a Site Front least sQuares Range (SFQR) less than or equal to 20 nm at any site of 26 mm × 8 mm on the front surface of the wafer and an edge exclusion less than or equal to 2 mm. g. "Vacuum electronic devices" operating at frequencies of 31,8 GHz or higher; h. Substrates of gallium oxide for electronic components. 3E004"Technology" "required" for the slicing, grinding and polishing of 300 mm diameter silicon wafers to achieve a Site Front least sQuares Range (SFQR) less than or equal to 20 nm at any site of 26 mm × 8 mm on the front surface of the wafer and an edge exclusion less than or equal to 2 mm. Technical Note: For the purposes of 3E004 SFQR is the range of maximum deviation and minimum deviation from front reference plane, calculated by least square method with all front surface data including site boundary within a site. 3E101"Technology" according to the General Technology Note for the "use" of equipment or "software" specified in 3A001.a.1. or 2., 3A101, 3A102 or 3D101. 3E101"Technology" according to the General Technology Note for the "use" of equipment or "software" specified in 3A001.a.1. or 2., 3A101, 3A102 or 3D101. 3E102"Technology" according to the General Technology Note for the "development" of "software" specified in 3D101. 3E201"Technology" according to the General Technology Note for the "use" of equipment specified in 3A001.e.2., 3A001.e.3., 3A001.g., 3A201, 3A225 to 3A234. 3E225"Technology", in the form of codes or keys, to enhance or release the performance of frequency changers or generators to meet the characteristics of 3A225. PART VI Category 4 CATEGORY 4 - COMPUTERS Note 1: Computers, related equipment and "software" performing telecommunications or "local area network" functions must also be evaluated against the performance characteristics of Category 5, Part 1 (Telecommunications). Note 2: Control units which directly interconnect the buses or channels of central processing units, main storage or disk controllers are not regarded as telecommunications equipment described in Category 5, Part 1 (Telecommunications). N.B. For the control status of "software" specially designed for packet switching, see 5D001. Technical Note: Main storage is the primary storage for data or instructions for rapid access by a central processing unit. It consists of the internal storage of a "digital computer" and any hierarchical extension thereto, such as cache storage or non-sequentially accessed extended storage. 4ASystems, Equipment and Components 4A001Electronic computers and related equipment, having any of the following and "electronic assemblies" and specially designed components therefor: N.B. SEE ALSO 4A101. a. Specially designed to have any of the following: 1. Rated for operation at an ambient temperature below 228 K (–45 °C) or above 358 K (85 °C); or Note: 4A001.a.1. does not control computers specially designed for civil automobile, railway train or "civil aircraft" applications. 1. Rated for operation at an ambient temperature below 228 K (– 45 °C) or above 358 K (85 °C); or Note: 4A001.a.1. does not control computers specially designed for civil automobile, railway train or civil aircraft applications. 2. Radiation hardened to exceed any of the following specifications: a. Total Dose 5 × 103 Gy (silicon); b. Dose Rate Upset 5 × 106 Gy (silicon)/s; or c. Single Event Upset 1 × 10–8 Error/bit/day; Note: 4A001.a.2. does not control computers specially designed for "civil aircraft" applications. b. Not used. 4A003"Digital computers", "electronic assemblies", and related equipment therefor, as follows and specially designed components therefor: Note 1: 4A003 includes the following: Vector processors; Array processors; Digital signal processors; Logic processors; Equipment designed for "image enhancement". Note 2: The control status of the "digital computers" and related equipment described in 4A003 is determined by the control status of other equipment or systems provided: a. The "digital computers" or related equipment are essential for the operation of the other equipment or systems; b. The "digital computers" or related equipment are not a "principal element" of the other equipment or systems; and N.B.1. The control status of "signal processing" or "image enhancement" equipment specially designed for other equipment with functions limited to those required for the other equipment is determined by the control status of the other equipment even if it exceeds the "principal element" criterion. N.B.2. For the control status of "digital computers" or related equipment for telecommunications equipment, see Category 5, Part 1 (Telecommunications). N.B.2. For the control status of "digital computers" or related equipment for telecommunications equipment, see Category 5, Part 1 (Telecommunications). c. The "technology" for the "digital computers" and related equipment is determined by 4E. a. Not used; b. "Digital computers" having an "Adjusted Peak Performance" ("APP") exceeding 29 Weighted TeraFLOPS (WT); b. "Digital computers" having an "Adjusted Peak Performance" ("APP") exceeding 70 Weighted TeraFLOPS (WT); c. "Electronic assemblies" specially designed or modified for enhancing performance by aggregation of processors so that the "APP" of the aggregation exceeds the limit specified in 4A003.b.; Note 1: 4A003.c. controls only "electronic assemblies" and programmable interconnections not exceeding the limit specified in 4A003.b. when shipped as unintegrated "electronic assemblies". Note 2: 4A003.c. does not control "electronic assemblies" specially designed for a product or family of products whose maximum configuration does not exceed the limit specified in 4A003.b. d. Not used; e. Not used; f. Not used; g. Equipment specially designed for aggregating the performance of "digital computers" by providing external interconnections which allows communications at unidirectional data rates exceeding 2,0 Gbyte/s per link. g. Equipment specially designed for aggregating the performance of "digital computers" by providing external interconnections which allows communications at unidirectional data rates exceeding 2,0 Gbyte/s per link. Note: 4A003.g. does not control internal interconnection equipment (e.g. backplanes, buses), passive interconnection equipment, "network access controllers" or "communications channel controllers". 4A004Computers as follows and specially designed related equipment, "electronic assemblies" and components therefor: a. Systolic array computers; … 42 unchanged lines … n number of processors in the "digital computer" i processor number (i,...n) processor number (i,…n) ti processor cycle time (ti = 1/Fi) Fi processor frequency Ri peak floating point calculating rate Wi architecture adjustment factor Outline of "APP" calculation method 1. For each processor i, determine the peak number of 64-bit or larger floating point operations, FPOi, performed per cycle for each processor in the "digital computer". Note: In determining FPO, include only 64-bit or larger floating point additions or multiplications. All floating point operations must be expressed in operations per processor cycle; operations requiring multiple cycles may be expressed in fractional results per cycle. For processors not capable of performing calculations on floating point operands of 64-bit or more, the effective calculating rate R is zero. 2. Calculate the floating point rate R for each processor Ri = FPOi/ti. 3. Calculate "APP" as "APP" = W1 × R1 + W2 × R2 + … + Wn × Rn. 3. Calculate "APP" as "APP" = W1 × R1 + W2 × R2 + … + Wn × Rn. 4. For vector processors, Wi = 0,9. For non-vector processors, Wi = 0,3. Note 1: For processors that perform compound operations in a cycle, such as addition and multiplication, each operation is counted. Note 2: For a pipelined processor the effective calculating rate R is the faster of the pipelined rate, once the pipeline is full, or the non-pipelined rate. … 17 unchanged lines … a. Any type of telecommunications equipment having any of the following characteristics, functions or features: 1. Specially designed to withstand transitory electronic effects or electromagnetic pulse effects, both arising from a nuclear explosion; 2. Specially hardened to withstand gamma, neutron or ion radiation; 3. Specially designed to operate below 218 K (–55 °C); or 4. Specially designed to operate above 397 K (124 °C); 3. Specially designed to operate below 218 K (– 55 °C); or 4. Specially designed to operate above 397 K (124 °C); Note 1: 5A001.a.3. and 5A001.a.4. control only electronic equipment. Note 2: 5A001.a.2., 5A001.a.3. and 5A001.a.4. do not control equipment designed or modified for use on board satellites. b. Telecommunication systems and equipment, and specially designed components and accessories therefor, having any of the following characteristics, functions or features: 1. Being underwater untethered communications systems having any of the following: a. An acoustic carrier frequency outside the range from 20 kHz to 60 kHz; a. An acoustic carrier frequency outside the range from 20 kHz to 60 kHz; b. Using an electromagnetic carrier frequency below 30 kHz; c. Using electronic beam steering techniques; or d. Using "lasers" or light-emitting diodes (LEDs) with an output wavelength greater than 400 nm and less than 700 nm, in a "local area network"; 2. Being radio equipment operating in the 1,5 MHz to 87,5 MHz band and having all of the following: a. Automatically predicting and selecting frequencies and "total digital transfer rates" per channel to optimise the transmission; and b. Incorporating a linear power amplifier configuration having a capability to support multiple signals simultaneously at an output power of 1 kW or more in the frequency range of 1,5 MHz or more but less than 30 MHz, or 250 W or more in the frequency range of 30 MHz or more but not exceeding 87,5 MHz, over an "instantaneous bandwidth" of one octave or more and with an output harmonic and distortion content of better than -80 dB; 3. Being radio equipment employing "spread spectrum" techniques, including "frequency hopping" techniques, other than those specified in 5A001.b.4. and having any of the following: a. User programmable spreading codes; or b. A total transmitted bandwidth which is 100 or more times the bandwidth of any one information channel and in excess of 50 kHz; b. A total transmitted bandwidth which is 100 or more times the bandwidth of any one information channel and in excess of 50 kHz; Note: 5A001.b.3.b. does not control radio equipment specially designed for use with any of the following: a. Civil cellular radio-communications systems; or b. Fixed or mobile satellite earth stations for commercial civil telecommunications. Note: 5A001.b.3 does not control equipment designed to operate at an output power of 1 W or less. 4. Being radio equipment employing ultra-wideband modulation techniques, having user programmable channelising codes, scrambling codes or network identification codes and having any of the following: a. A bandwidth exceeding 500 MHz; or b. A "fractional bandwidth" of 20 % or more; 5. Being digitally controlled radio receivers having all of the following: a. More than 1000 channels; b. A channel switching time of less than 1 ms; c. Automatic searching or scanning of a part of the electromagnetic spectrum; and d. Identification of the received signals or the type of transmitter; or Note: 5A001.b.5. does not control radio equipment specially designed for use with civil cellular radio-communications systems. Technical Note: Channel switching time means the time (i.e., delay) to change from one receiving frequency to another, to arrive at or within ±0,05 % of the final specified receiving frequency. Items having a specified frequency range of less than ±0,05 % around their centre frequency are defined to be incapable of channel frequency switching. Channel switching time means the time (i.e., delay) to change from one receiving frequency to another, to arrive at or within ± 0,05 % of the final specified receiving frequency. Items having a specified frequency range of less than ± 0,05 % around their centre frequency are defined to be incapable of channel frequency switching. 6. Employing functions of digital "signal processing" to provide voice coding output at rates of less than 700 bit/s. Technical Notes: 1. For variable rate voice coding, 5A001.b.6. applies to the voice coding output of continuous speech. 2. For the purposes of 5A001.b.6., voice coding is defined as the technique to take samples of human voice and then convert these samples into a digital signal, taking into account specific characteristics of human speech. c. Optical fibres of more than 500 m in length and specified by the manufacturer as being capable of withstanding a proof test tensile stress of 2 × 109 N/m2 or more; c. Optical fibres of more than 500 m in length and specified by the manufacturer as being capable of withstanding a proof test tensile stress of 2 × 109 N/m2 or more; N.B. For underwater umbilical cables, see 8A002.a.3. Technical Note: Proof Test: on-line or off-line production screen testing that dynamically applies a prescribed tensile stress over a 0,5 to 3 m length of fibre at a running rate of 2 to 5 m/s while passing between capstans approximately 150 mm in diameter. The ambient temperature is a nominal 293 K (20 °C) and relative humidity 40 %. Equivalent national standards may be used for executing the proof test. d. Electronically steerable phased array antennae as follows: 1. Rated for operation above 31,8 GHz, but not exceeding 57 GHz, and having an Effective Radiated Power (ERP) equal to or greater than +20 dBm (22,15 dBm Effective Isotropic Radiated Power (EIRP)); 2. Rated for operation above 57 GHz, but not exceeding 66 GHz, and having an ERP equal to or greater than +24 dBm (26,15 dBm EIRP); 3. Rated for operation above 66 GHz, but not exceeding 90 GHz, and having an ERP equal to or greater than +20 dBm (22,15 dBm EIRP); 1. Rated for operation above 31,8 GHz, but not exceeding 57 GHz, and having an Effective Radiated Power (ERP) equal to or greater than + 20 dBm (22,15 dBm Effective Isotropic Radiated Power (EIRP)); 2. Rated for operation above 57 GHz, but not exceeding 66 GHz, and having an ERP equal to or greater than + 24 dBm (26,15 dBm EIRP); 3. Rated for operation above 66 GHz, but not exceeding 90 GHz, and having an ERP equal to or greater than + 20 dBm (22,15 dBm EIRP); 4. Rated for operation above 90 GHz; Note 1: 5A001.d. does not control electronically steerable phased array antennae for landing systems with instruments meeting ICAO standards covering Microwave Landing Systems (MLS). Note 2: 5A001.d. does not control antennae specially designed for any of the following: … 28 unchanged lines … h. Counter Improvised Explosive Device (IED) equipment and related equipment, as follows: 1. Radio Frequency (RF) transmitting equipment, not specified in 5A001.f., designed or modified for prematurely activating or preventing the initiation of Improvised Explosive Devices (IEDs); 2. Equipment using techniques designed to enable radio communications in the same frequency channels on which co-located equipment specified in 5A001.h.1. is transmitting; N.B. SEE ALSO MILITARY GOODS CONTROLS. N.B. SEE ALSO MILITARY GOODS CONTROLS i. Not used; j. Internet Protocol (IP) network communications surveillance systems or equipment, and specially designed components therefor, having all of the following: 1. Performing all of the following on a carrier class Internet Protocol (IP) network (e.g., national grade IP backbone): … 90 unchanged lines … b. Operating as a "local area network"; d. "Technology" according to the General Technology Note for the "development" or "production" of "Monolithic Microwave Integrated Circuit" ("MMIC") amplifiers specially designed for telecommunications and that are any of the following: Technical Note: For purposes of 5E001.d., the parameter peak saturated power output may also be referred to on product data sheets as output power, saturated power output, maximum power output, peak power output, or peak envelope power output. For the purposes of 5E001.d., the parameter peak saturated power output may also be referred to on product data sheets as output power, saturated power output, maximum power output, peak power output, or peak envelope power output. 1. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a "fractional bandwidth" greater than 15 %, and having any of the following: a. A peak saturated power output greater than 75 W (48,75 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz; b. A peak saturated power output greater than 55 W (47,4 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz; c. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or d. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz; 2. Rated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz with a "fractional bandwidth" greater than 10 %, and having any of the following: a. A peak saturated power output greater than 10W (40 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; or b. A peak saturated power output greater than 5W (37 dBm) at any frequency exceeding 8,5 GHz up to and including 16 GHz; 3. Rated for operation with a peak saturated power output greater than 3 W (34,77 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz, and with a "fractional bandwidth" of greater than 10 %; 4. Rated for operation with a peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; 4. Rated for operation with a peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz; 5. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10 %; 6. Rated for operation with a peak saturated power output greater than 31,62 mW (15 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10 %; 7. Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5 %; or 8. Rated for operation with a peak saturated power output greater than 0,1 nW (–70 dBm) at any frequency exceeding 90 GHz; 8. Rated for operation with a peak saturated power output greater than 0,1 nW (– 70 dBm) at any frequency exceeding 90 GHz; e. "Technology" according to the General Technology Note for the "development" or "production" of electronic devices and circuits, specially designed for telecommunications and containing components manufactured from "superconductive" materials, specially designed for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents and having any of the following: 1. Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10–14 J; or 2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10000. 5E101"Technology" according to the General Technology Note for the "development", "production" or "use" of equipment specified in 5A101. Part 2 - "INFORMATION SECURITY" Note 1: Not used. Note 2: Category 5, Part 2 does not control products when accompanying their user for the user’s personal use. Note 2: Category 5, Part 2 does not control products when accompanying their user for the user's personal use. Note 3: Cryptography Note 5A002, 5D002.a.1., 5D002.b. and 5D002.c.1. do not control items as follows: a. Items that meet all of the following: … 39 unchanged lines … f. Encryption or decryption in support of entertainment, mass commercial broadcasts or medical records management; or g. Key management in support of any function described in paragraph a. to f. above. 2. For the purposes of 5A002.a., described security algorithm means any of the following: a. A "symmetric algorithm" employing a key length in excess of 56 bits, not including parity bits; a. A "symmetric algorithm" employing a key length in excess of 56 bits, not including parity bits; b. An "asymmetric algorithm" where the security of the algorithm is based on any of the following: 1. Factorisation of integers in excess of 512 bits (e.g., RSA); 2. Computation of discrete logarithms in a multiplicative group of a finite field of size greater than 512 bits (e.g., Diffie-Hellman over Z/pZ); or 3. Discrete logarithms in a group other than mentioned in paragraph b.2. in excess of 112 bits (e.g., Diffie-Hellman over an elliptic curve); or c. An "asymmetric algorithm" where the security of the algorithm is based on any of the following: 1. Shortest vector or closest vector problems associated with lattices (e.g., NewHope, Frodo, NTRUEncrypt, Kyber, Titanium); 2. Finding isogenies between Supersingular elliptic curves (e.g., Supersingular Isogeny Key Encapsulation); or 3. Decoding random codes (e.g., McEliece, Niederreiter). Technical Note: An algorithm described by Technical Note 2.c. may be referred to as being post-quantum, quantum-safe or quantum-resistant. Note 1: When necessary as determined by the appropriate authority in the exporter’s country, details of items must be accessible and provided to the authority upon request, in order to establish any of the following: Note 1: When necessary as determined by the appropriate authority in the exporter's country, details of items must be accessible and provided to the authority upon request, in order to establish any of the following: a. Whether the item meets the criteria of 5A002.a.1. to 5A002.a.4.; or b. Whether the cryptographic capability for data confidentiality specified in 5A002.a. is usable without "cryptographic activation". Note 2: 5A002.a. does not control any of the following items, or specially designed "information security" components therefor: … 18 unchanged lines … Technical Note: Money transactions in 5A002.a. Note 2.b. includes the collection and settlement of fares or credit functions. c. Portable or mobile radiotelephones for civil use (e.g., for use with commercial civil cellular radio communication systems) that are not capable of transmitting encrypted data directly to another radiotelephone or equipment (other than Radio Access Network (RAN) equipment), nor of passing encrypted data through RAN equipment (e.g., Radio Network Controller (RNC) or Base Station Controller (BSC)); d. Cordless telephone equipment not capable of end-to-end encryption where the maximum effective range of unboosted cordless operation (i.e. a single, unrelayed hop between terminal and home base station) is less than 400 metres according to the manufacturer’s specifications; d. Cordless telephone equipment not capable of end-to-end encryption where the maximum effective range of unboosted cordless operation (i.e. a single, unrelayed hop between terminal and home base station) is less than 400 metres according to the manufacturer's specifications; e. Portable or mobile radiotelephones and similar client wireless devices for civil use, that implement only published or commercial cryptographic standards (except for anti-piracy functions, which may be non-published) and also meet the provisions of paragraphs a.2. to a.4. of the Cryptography Note (Note 3 in Category 5, Part 2), that have been customised for a specific civil industry application with features that do not affect the cryptographic functionality of these original non-customised devices; f. Items, where the "information security" functionality is limited to wireless "personal area network" functionality, implementing only published or commercial cryptographic standards; g. Mobile telecommunications Radio Access Network (RAN) equipment designed for civil use, which also meet the provisions of paragraphs a.2. to a.4. of the Cryptography Note (Note 3 in Category 5, Part 2), having an RF output power limited to 0,1 W (20 dBm) or less, and supporting 16 or fewer concurrent users; g. Mobile telecommunications Radio Access Network (RAN) equipment designed for civil use, which also meet the provisions of paragraphs a.2. to a.4. of the Cryptography Note (Note 3 in Category 5, Part 2), having an RF output power limited to 0,1W (20 dBm) or less, and supporting 16 or fewer concurrent users; h. Routers, switches, gateways or relays, where the "information security" functionality is limited to the tasks of "Operations, Administration or Maintenance" ("OAM") implementing only published or commercial cryptographic standards; or i. General purpose computing equipment or servers, where the "information security" functionality meets all of the following: 1. Uses only published or commercial cryptographic standards; and 2. Is any of the following: a. Integral to a CPU that meets the provisions of Note 3 to Category 5, Part 2; a. Integral to a CPU that meets the provisions of Note 3 to Category 5, Part 2; b. Integral to an operating system that is not specified in 5D002; or c. Limited to "OAM" of the equipment. j. Items specially designed for a connected civil industry application, meeting all of the following: … 21 unchanged lines … 2. A "fractional bandwidth" of 20 % or more; e. Designed or modified to use cryptographic techniques to generate the spreading code for "spread spectrum" systems, other than those specified in 5A002.d., including the hopping code for "frequency hopping" systems. 5A003Systems, equipment and components, for non-cryptographic "information security", as follows: a. Communications cable systems designed or modified using mechanical, electrical or electronic means to detect surreptitious intrusion; a. Communications cable systems designed or modified to use mechanical, electrical or electronic means to detect surreptitious intrusion; Note: 5A003.a. only controls physical layer security. For the purpose of 5A003.a., the physical layer includes Layer 1 of the Reference Model of Open Systems Interconnection (OSI) (ISO/IEC 7498-1). b. Specially designed or modified to reduce the compromising emanations of information-bearing signals beyond what is necessary for health, safety or electromagnetic interference standards. 5A004Systems, equipment and components for defeating, weakening or bypassing "information security", as follows: … 44 unchanged lines … Note: 5E002 includes "information security" technical data resulting from procedures carried out to evaluate or determine the implementation of functions, features or techniques specified in Category 5, Part 2. PART VIII Category 6 CATEGORY 6 – SENSORS AND LASERS CATEGORY 6 - SENSORS AND LASERS 6ASystems, Equipment and Components 6A001Acoustic systems, equipment and components, as follows: a. Marine acoustic systems, equipment and specially designed components therefor, as follows: 1. Active (transmitting or transmitting-and-receiving) systems, equipment and specially designed components therefor, as follows: Note: 6A001.a.1. does not control equipment as follows: a. Depth sounders operating vertically below the apparatus, not including a scanning function exceeding ± 20o, and limited to measuring the depth of water, the distance of submerged or buried objects or fish finding; a. Depth sounders operating vertically below the apparatus, not including a scanning function exceeding ± 20o, and limited to measuring the depth of water, the distance of submerged or buried objects or fish finding; b. Acoustic beacons, as follows: 1. Acoustic emergency beacons; 2. Pingers specially designed for relocating or returning to an underwater position. … 48 unchanged lines … Note 1: The control status of acoustic projectors, including transducers, specially designed for other equipment not specified in 6A001 is determined by the control status of the other equipment. Note 2: 6A001.a.1.c. does not control electronic sources which direct the sound vertically only, or mechanical (e.g., air gun or vapour-shock gun) or chemical (e.g., explosive) sources. Note 3: Piezoelectric elements specified in 6A001.a.1.c. include those made from lead-magnesium-niobate/lead-titanate (Pb(Mg1/3Nb2/3)O3-PbTiO3, or PMN-PT) single crystals grown from solid solution or lead-indium-niobate/lead-magnesium niobate/lead-titanate (Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3, or PIN-PMN-PT) single crystals grown from solid solution. 1. Operating at frequencies below 10 kHz and having any of the following: a. Not designed for continuous operation at 100 % duty cycle and having a radiated free-field Source Level (SLRMS) exceeding (10log(f) + 169,77) dB (reference 1 μPa at 1 m) where f is the frequency in Hertz of maximum Transmitting Voltage Response (TVR) below 10kHz; or 1. Operating at frequencies below 10 kHz and having any of the following: a. Not designed for continuous operation at 100 % duty cycle and having a radiated free-field Source Level (SLRMS) exceeding (10log(f) + 169,77) dB (reference 1 μPa at 1 m) where f is the frequency in Hertz of maximum Transmitting Voltage Response (TVR) below 10kHz; or b. Designed for continuous operation at 100 % duty cycle and having a continuously radiated free-field Source Level (SLRMS) at 100 % duty cycle exceeding (10log(f) + 159,77) dB (reference 1 μPa at 1 m) where f is the frequency in Hertz of maximum Transmitting Voltage Response (TVR) below 10kHz; or Technical Note: The free-field Source Level (SLRMS) is defined along the maximum response axis and in the far field of the acoustic projector. It can be obtained from the Transmitting Voltage Response using the following equation: SLRMS = (TVR + 20log VRMS) dB (ref 1μPa at 1 m), where SLRMS is the source level, TVR is the Transmitting Voltage Response and VRMS is the Driving Voltage of the Projector. The free-field Source Level ( SLRMS) is defined along the maximum response axis and in the far field of the acoustic projector. It can be obtained from the Transmitting Voltage Response using the following equation: SLRMS = (TVR + 20log VRMS) dB (ref 1μPa at 1 m), where SLRMS is the source level, TVR is the Transmitting Voltage Response and VRMS is the Driving Voltage of the Projector. 2. Not used; 3. Side-lobe suppression exceeding 22 dB; d. Acoustic systems and equipment, designed to determine the position of surface vessels or underwater vehicles and having all the following, and specially designed components therefor: … 25 unchanged lines … e. Lead-indium-niobate/lead-magnesium niobate/lead-titanate (i.e., Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3, or PIN-PMN-PT) piezoelectric single crystals grown from solid solution; 4. A hydrophone sensitivity better than -180 dB at any depth with no acceleration compensation; 5. Designed to operate at depths exceeding 35 m with acceleration compensation; or 6. Designed for operation at depths exceeding 1000 m and having a hydrophone sensitivity better than -230 dB below 4 kHz; 6. Designed for operation at depths exceeding 1000 m and having a hydrophone sensitivity better than – 230 dB below 4 kHz; Technical Notes: 1. Piezoelectric polymer film sensing elements consist of polarised polymer film that is stretched over and attached to a supporting frame or spool (mandrel). 2. Flexible piezoelectric composite sensing elements consist of piezoelectric ceramic particles or fibres combined with an electrically insulating, acoustically transparent rubber, polymer or epoxy compound, where the compound is an integral part of the sensing elements. 3. Hydrophone sensitivity is defined as twenty times the logarithm to the base 10 of the ratio of rms output voltage to a 1 V rms reference, when the hydrophone sensor, without a pre-amplifier, is placed in a plane wave acoustic field with an rms pressure of 1 μPa. For example, a hydrophone of -160 dB (reference 1 V per μPa) would yield an output voltage of 10–8 V in such a field, while one of -180 dB sensitivity would yield only 10–9 V output. Thus, -160 dB is better than -180 dB. 3. Hydrophone sensitivity is defined as twenty times the logarithm to the base 10 of the ratio of rms output voltage to a 1 V rms reference, when the hydrophone sensor, without a pre-amplifier, is placed in a plane wave acoustic field with an rms pressure of 1 μPa. For example, a hydrophone of – 160 dB (reference 1 V per μPa) would yield an output voltage of 10–8 V in such a field, while one of – 180 dB sensitivity would yield only 10–9 V output. Thus, – 160 dB is better than – 180 dB. b. Towed acoustic hydrophone arrays having any of the following: Technical Note: Hydrophone arrays consist of a number of hydrophones providing multiple acoustic output channels. … 62 unchanged lines … 1. A peak response in the wavelength range exceeding 400 nm but not exceeding 1050 nm; 2. Electron image amplification using any of the following: a. A microchannel plate with a hole pitch (centre-to-centre spacing) of 12 μm or less; or b. An electron sensing device with a non-binned pixel pitch of 500 μm or less, specially designed or modified to achieve charge multiplication other than by a microchannel plate; and b. An electron sensing device with a non-binned pixel pitch of 500 μm or less, specially designed or modified to achieve charge multiplication other than by a microchannel plate; and 3. Any of the following photocathodes: a. Multialkali photocathodes (e.g., S-20 and S-25) having a luminous sensitivity exceeding 350 μA/lm; a. Multialkali photocathodes (e.g., S-20 and S-25) having a luminous sensitivity exceeding 350 μA/lm; b. GaAs or GaInAs photocathodes; or c. Other "III/V compound" semiconductor photocathodes having a maximum "radiant sensitivity" exceeding 10 mA/W; b. Image intensifier tubes having all of the following: 1. A peak response in the wavelength range exceeding 1050 nm but not exceeding 1800 nm; 2. Electron image amplification using any of the following: a. A microchannel plate with a hole pitch (centre-to-centre spacing) of 12 μm or less; or b. An electron sensing device with a non-binned pixel pitch of 500 μm or less, specially designed or modified to achieve charge multiplication other than by a microchannel plate; and b. An electron sensing device with a non-binned pixel pitch of 500 μm or less, specially designed or modified to achieve charge multiplication other than by a microchannel plate; and 3. "III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes, having a maximum "radiant sensitivity" exceeding 15 mA/W; c. Specially designed components as follows: 1. Microchannel plates having a hole pitch (centre-to-centre spacing) of 12 μm or less; 1. Microchannel plates having a hole pitch (centre-to-centre spacing) of 12 μm or less; 2. An electron sensing device with a non-binned pixel pitch of 500 μm or less, specially designed or modified to achieve charge multiplication other than by a microchannel plate; 3. "III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes; Note: 6A002.a.2.c.3. does not control compound semiconductor photocathodes designed to achieve a maximum "radiant sensitivity" of any of the following: … 30 unchanged lines … b. Non-"space-qualified" "focal plane arrays" having all of the following: 1. Individual elements with a peak response in the wavelength range exceeding 1050 nm but not exceeding 1200 nm; and 2. Any of the following: a. A response "time constant" of 95 ns or less; or a. A response "time constant" of 95 ns or less; or b. Specially designed or modified to achieve charge multiplication and having a maximum "radiant sensitivity" exceeding 10 mA/W; c. Non-"space-qualified" non-linear (2-dimensional) "focal plane arrays" having individual elements with a peak response in the wavelength range exceeding 1200 nm but not exceeding 30000 nm; N.B. Silicon and other material based microbolometer non-"space-qualified" "focal plane arrays" are only specified in 6A002.a.3.f. … 37 unchanged lines … e. Equipment specially designed for laboratory use. d. Special support components for optical sensors, as follows: 1. "Space-qualified" cryocoolers; 2. Non-"space-qualified" cryocoolers having a cooling source temperature below 218 K (–55 °C), as follows: 2. Non-"space-qualified" cryocoolers having a cooling source temperature below 218 K (– 55 °C), as follows: a. Closed cycle type with a specified Mean-Time-To-Failure (MTTF) or Mean-Time-Between-Failures (MTBF), exceeding 2500 hours; b. Joule-Thomson (JT) self-regulating minicoolers having bore (outside) diameters of less than 8 mm; 3. Optical sensing fibres specially fabricated either compositionally or structurally, or modified by coating, to be acoustically, thermally, inertially, electromagnetically or nuclear radiation sensitive; … 21 unchanged lines … Note: 6A003.b. does not control television or video cameras, specially designed for television broadcasting. 1. Video cameras incorporating solid state sensors, having a peak response in the wavelength range exceeding 10 nm, but not exceeding 30000 nm and having all of the following: a. Having any of the following: 1. More than 4 × 106 "active pixels" per solid state array for monochrome (black and white) cameras; 2. More than 4 × 106 "active pixels" per solid state array for colour cameras incorporating three solid state arrays; or 3. More than 12 × 106 "active pixels" for solid state array colour cameras incorporating one solid state array; and 1. More than 4 × 106 "active pixels" per solid state array for monochrome (black and white) cameras; 2. More than 4 × 106 "active pixels" per solid state array for colour cameras incorporating three solid state arrays; or 3. More than 12 × 106 "active pixels" for solid state array colour cameras incorporating one solid state array; and b. Having any of the following: 1. Optical mirrors specified in 6A004.a.; 2. Optical control equipment specified in 6A004.d.; or … 38 unchanged lines … 3. Incorporates an active mechanism that forces the camera not to function when it is removed from the vehicle for which it was intended. Technical Notes: 1. Instantaneous Field of View (IFOV) specified in 6A003.b.4. Note 3.b. is the lesser figure of the Horizontal IFOV or the Vertical IFOV. Horizontal IFOV = horizontal Field of View (FOV)/number of horizontal detector elements Vertical IFOV = vertical Field of View (FOV)/number of vertical detector elements. Horizontal IFOV = horizontal Field of View (FOV) / number of horizontal detector elements Vertical IFOV = vertical Field of View (FOV) / number of vertical detector elements. 2. Direct view in 6A003.b.4. Note 3.b. refers to an imaging camera operating in the infrared spectrum that presents a visual image to a human observer using a near-to-eye micro display incorporating any light-security mechanism. Note 4: 6A003.b.4.c. does not control imaging cameras having any of the following: a. Having all of the following: … 33 unchanged lines … 1. A mechanical resonant frequency of 750 Hz or more; and 2. More than 200 actuators; or b. A Laser Induced Damage Threshold (LIDT) being any of the following: 1. Greater than 1 kW/cm2 using a "CW laser"; or 2. Greater than 2 J/cm2 using 20 ns "laser" pulses at 20 Hz repetition rate; 1. Greater than 1 kW/ cm2 using a "CW laser"; or 2. Greater than 2 J/ cm2 using 20 ns "laser" pulses at 20 Hz repetition rate; Technical Note: Deformable mirrors are mirrors having any of the following: a. A single continuous optical reflecting surface which is dynamically deformed by the application of individual torques or forces to compensate for distortions in the optical waveform incident upon the mirror; or … 17 unchanged lines … 1. Components lightweighted to less than 20 % "equivalent density" compared with a solid blank of the same aperture and thickness; 2. Raw substrates, processed substrates having surface coatings (single-layer or multi-layer, metallic or dielectric, conducting, semiconducting or insulating) or having protective films; 3. Segments or assemblies of mirrors designed to be assembled in space into an optical system with a collecting aperture equivalent to or larger than a single optic 1 m in diameter; 4. Components manufactured from "composite" materials having a coefficient of linear thermal expansion, in any coordinate direction, equal to or less than 5 × 10–6/K; 4. Components manufactured from "composite" materials having a coefficient of linear thermal expansion, in any coordinate direction, equal to or less than 5 × 10–6/K; d. Optical control equipment as follows: 1. Equipment specially designed to maintain the surface figure or orientation of the "space-qualified" components specified in 6A004.c.1. or 6A004.c.3.; 2. Steering, tracking, stabilisation and resonator alignment equipment as follows: a. Beam steering mirror stages designed to carry mirrors having diameter or major axis length greater than 50 mm and having all of the following, and specially designed electronic control equipment therefor: 1. A maximum angular travel of ±26 mrad or more; 1. A maximum angular travel of ± 26 mrad or more; 2. A mechanical resonant frequency of 500 Hz or more; and 3. An angular "accuracy" of 10 μrad (microradians) or less (better); b. Resonator alignment equipment having bandwidths equal to or more than 100 Hz and an "accuracy" of 10 μrad or less (better); 3. Gimbals having all of the following: a. A maximum slew exceeding 5o; b. A bandwidth of 100 Hz or more; c. Angular pointing errors of 200 μrad (microradians) or less; and d. Having any of the following: 1. Exceeding 0,15 m but not exceeding 1 m in diameter or major axis length and capable of angular accelerations exceeding 2 rad (radians)/s2; or 2. Exceeding 1 m in diameter or major axis length and capable of angular accelerations exceeding 0,5 rad (radians)/s2; 4. Not used e. Aspheric optical elements having all of the following: 1. Largest dimension of the optical-aperture greater than 400 mm; 2. Surface roughness less than 1 nm (rms) for sampling lengths equal to or greater than 1 mm; and 3. Coefficient of linear thermal expansion's absolute magnitude less than 3 × 10–6/K at 25 °C. 3. Coefficient of linear thermal expansion's absolute magnitude less than 3 × 10–6/K at 25 °C. Technical Notes: 1. An aspheric optical element is any element used in an optical system whose imaging surface or surfaces are designed to depart from the shape of an ideal sphere. 2. Manufacturers are not required to measure the surface roughness listed in 6A004.e.2. unless the optical element was designed or manufactured with the intent to meet, or exceed, the control parameter. Note 6A004.e. does not control aspheric optical elements having any of the following: a. Largest optical-aperture dimension less than 1 m and focal length to aperture ratio equal to or greater than 4,5:1; b. Largest optical-aperture dimension equal to or greater than 1 m and focal length to aperture ratio equal to or greater than 7:1; c. Designed as Fresnel, flyeye, stripe, prism or diffractive optical elements; d. Fabricated from borosilicate glass having a coefficient of linear thermal expansion greater than 2,5 × 10–6/K at 25 °C; or d. Fabricated from borosilicate glass having a coefficient of linear thermal expansion greater than 2,5 × 10–6/K at 25 °C; or e. An X-ray optical element having inner mirror capabilities (e.g., tube-type mirrors). N.B. For aspheric optical elements specially designed for lithography equipment, see 3B001. f. Dynamic wavefront measuring equipment having all of the following: 1. Frame rates equal to or more than 1 kHz; and 2. A wavefront accuracy equal to or less (better) than λ/20 at the designed wavelength. Technical Note: For the purposes of 6A004.f., frame rate is a frequency at which all "active pixels" in the "focal plane array" are integrated for recording images projected by the wavefront sensor optics. 6A005"Lasers", other than those specified in 0B001.g.5. or 0B001.h.6., components and optical equipment, as follows: N.B. SEE ALSO 6A205. Note 1: Pulsed "lasers" include those that run in a continuous wave (CW) mode with pulses superimposed. Note 2: Excimer, semiconductor, chemical, CO, CO2, and non-repetitive pulsed Nd:glass "lasers" are only specified in 6A005.d. Technical Note: Non-repetitive pulsed refers to "lasers" that produce either a single output pulse or that have a time interval between pulses exceeding one minute. Note 3: 6A005 includes fibre "lasers". Note 4: The control status of "lasers" incorporating frequency conversion (i.e., wavelength change) by means other than one "laser" pumping another "laser" is determined by applying the control parameters for both the output of the source "laser" and the frequency-converted optical output. Note 5: 6A005 does not control "lasers" as follows: a. Ruby with output energy below 20 J; b. Nitrogen; c. Krypton. Note 6: For the purposes of 6A005.a. and 6A005.b., single transverse mode refers to "lasers" with a beam profile having an M2-factor of less than 1,3, while multiple transverse mode refers to "lasers" with a beam profile having an M2-factor of 1,3 or higher. Note 6: For the purposes of 6A005.a. and 6A005.b., single transverse mode refers to "lasers" with a beam profile having an M 2-factor of less than 1,3, while multiple transverse mode refers to "lasers" with a beam profile having an M 2-factor of 1,3 or higher. Technical Note: In 6A005 Wall-plug efficiency is defined as the ratio of "laser" output power (or "average output power") to total electrical input power required to operate the "laser", including the power supply/conditioning and thermal conditioning/heat exchanger. a. Non-"tunable" continuous wave "(CW) lasers" having any of the following: 1. Output wavelength less than 150 nm and output power exceeding 1 W; 2. Output wavelength of 150 nm or more but not exceeding 510 nm and output power exceeding 30 W; Note: 6A005.a.2. does not control Argon "lasers" having an output power equal to or less than 50 W. 3. Output wavelength exceeding 510 nm but not exceeding 540 nm and any of the following: a. Single transverse mode output and output power exceeding 50 W; or b. Multiple transverse mode output and output power exceeding 150 W; a. Single transverse mode output and output power exceeding 50 W; or b. Multiple transverse mode output and output power exceeding 150 W; 4. Output wavelength exceeding 540 nm but not exceeding 800 nm and output power exceeding 30 W; 5. Output wavelength exceeding 800 nm but not exceeding 975 nm and any of the following: a. Single transverse mode output and output power exceeding 50 W; or b. Multiple transverse mode output and output power exceeding 80 W; a. Single transverse mode output and output power exceeding 50 W; or b. Multiple transverse mode output and output power exceeding 80 W; 6. Output wavelength exceeding 975 nm but not exceeding 1150 nm and any of the following: a. Single transverse mode output and any of the following: 1. Output power exceeding 1000 W; or 2. Having all of the following: a. Output power exceeding 500 W; and b. Spectral bandwidth less than 40 GHz; or b. Multiple transverse mode output and any of the following: 1. Wall-plug efficiency exceeding 18 % and output power exceeding 1000 W; or 1. Wall-plug efficiency exceeding 18 % and output power exceeding 1000 W; or 2. Output power exceeding 2 kW; Note 1: 6A005.a.6.b. does not control multiple transverse mode, industrial "lasers" with output power exceeding 2 kW and not exceeding 6 kW with a total mass greater than 1200 kg. For the purpose of this note, total mass includes all components required to operate the "laser", e.g., "laser", power supply, heat exchanger, but excludes external optics for beam conditioning or delivery. Note 2: 6A005.a.6.b. does not control multiple transverse mode, industrial "lasers" having any of the following: … 16 unchanged lines … 10. Output wavelength exceeding 2100 nm and output power exceeding 1 W; b. Non-"tunable" "pulsed lasers" having any of the following: 1. Output wavelength less than 150 nm and any of the following: a. Output energy exceeding 50 mJ per pulse and "peak power" exceeding 1 W; or b. "Average output power" exceeding 1 W; a. Output energy exceeding 50 mJ per pulse and "peak power" exceeding 1 W; or b. "Average output power" exceeding 1 W; 2. Output wavelength of 150 nm or more but not exceeding 510 nm and any of the following: a. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 30 W; or b. "Average output power" exceeding 30 W; a. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 30 W; or b. "Average output power" exceeding 30 W; Note: 6A005.b.2.b. does not control Argon "lasers" having an "average output power" equal to or less than 50 W. 3. Output wavelength exceeding 510 nm but not exceeding 540 nm and any of the following: a. Single transverse mode output and any of the following: 1. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 50 W; or 1. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 50 W; or 2. "Average output power" exceeding 50 W; or b. Multiple transverse mode output and any of the following: 1. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 150 W; or 1. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 150 W; or 2. "Average output power" exceeding 150 W; 4. Output wavelength exceeding 540 nm but not exceeding 800 nm and any of the following: a. "Pulse duration" less than 1 ps and any of the following: 1. Output energy exceeding 0,005 J per pulse and "peak power" exceeding 5 GW; or 1. Output energy exceeding 0,005 J per pulse and "peak power" exceeding 5 GW; or 2. "Average output power" exceeding 20 W; or b. "Pulse duration" equal to or exceeding 1 ps and any of the following: 1. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 30 W; or 2. "Average output power" exceeding 30 W; 1. Output energy exceeding 1,5 J per pulse and "peak power" exceeding 30 W; or 2. "Average output power" exceeding 30 W; 5. Output wavelength exceeding 800 nm but not exceeding 975 nm and any of the following: a. "Pulse duration" less than 1 ps and any of the following: 1. Output energy exceeding 0,005 J per pulse and "peak power" exceeding 5 GW; or 2. Single transverse mode output and "average output power" exceeding 20 W; 1. Output energy exceeding 0,005 J per pulse and "peak power" exceeding 5 GW; or 2. Single transverse mode output and "average output power" exceeding 20 W; b. "Pulse duration" equal to or exceeding 1 ps and not exceeding 1 μs and any of the following: 1. Output energy exceeding 0,5 J per pulse and "peak power" exceeding 50 W; 2. Single transverse mode output and "average output power" exceeding 20 W; or 3. Multiple transverse mode output and "average output power" exceeding 50 W; or 1. Output energy exceeding 0,5 J per pulse and "peak power" exceeding 50 W; 2. Single transverse mode output and "average output power" exceeding 20 W; or 3. Multiple transverse mode output and "average output power" exceeding 50 W; or c. "Pulse duration" exceeding 1 μs and any of the following: 1. Output energy exceeding 2 J per pulse and "peak power" exceeding 50 W; 2. Single transverse mode output and "average output power" exceeding 50 W; or 3. Multiple transverse mode output and "average output power" exceeding 80 W; 2. Single transverse mode output and "average output power" exceeding 50 W; or 3. Multiple transverse mode output and "average output power" exceeding 80 W; 6. Output wavelength exceeding 975 nm but not exceeding 1150 nm and any of the following: a. "Pulse duration" of less than 1 ps, and any of the following: 1. Output "peak power" exceeding 2 GW per pulse; 2. "Average output power" exceeding 30 W; or 3. Output energy exceeding 0,002 J per pulse; b. "Pulse duration" equal to or exceeding 1 ps and less than 1 ns and any of the following: 1. Output "peak power" exceeding 5 GW per pulse; 2. "Average output power" exceeding 50 W; or 3. Output energy exceeding 0,1 J per pulse; c. "Pulse duration" equal to or exceeding 1 ns but not exceeding 1 μs, and any of the following: 1. Single transverse mode output and any of the following: a. "Peak power" exceeding 100 MW; b. "Average output power" exceeding 20 W limited by design to a maximum pulse repetition frequency less than or equal to 1 kHz; c. Wall-plug efficiency exceeding 12 %, "average output power" exceeding 100 W and capable of operating at a pulse repetition frequency greater than 1 kHz; b. "Average output power" exceeding 20 W limited by design to a maximum pulse repetition frequency less than or equal to 1 kHz; c. Wall-plug efficiency exceeding 12 %, "average output power" exceeding 100 W and capable of operating at a pulse repetition frequency greater than 1 kHz; d. "Average output power" exceeding 150 W and capable of operating at a pulse repetition frequency greater than 1 kHz; or e. Output energy exceeding 2 J per pulse; or 2. Multiple transverse mode output and any of the following: a. "Peak power" exceeding 400 MW; b. Wall-plug efficiency exceeding 18 % and "average output power" exceeding 500 W; c. "Average output power" exceeding 2 kW; or d. Output energy exceeding 4 J per pulse; or d. "Pulse duration" exceeding 1 μs and any of the following: 1. Single transverse mode output and any of the following: a. "Peak power" exceeding 500 kW; b. Wall-plug efficiency exceeding 12 % and "average output power" exceeding 100 W; or c. "Average output power" exceeding 150 W; or 2. Multiple transverse mode output and any of the following: a. "Peak power" exceeding 1 MW; b. Wall-plug efficiency exceeding 18 % and "average output power" exceeding 500 W; or c. "Average output power" exceeding 2 kW; 7. Output wavelength exceeding 1150 nm but not exceeding 1555 nm, and any of the following: a. "Pulse duration" not exceeding 1 μs and any of the following: 1. Output energy exceeding 0,5 J per pulse and "peak power" exceeding 50 W; 2. Single transverse mode output and "average output power" exceeding 20 W; or 1. Output energy exceeding 0,5 J per pulse and "peak power" exceeding 50 W; 2. Single transverse mode output and "average output power" exceeding 20 W; or 3. Multiple transverse mode output and "average output power" exceeding 50 W; or b. "Pulse duration" exceeding 1 μs and any of the following: 1. Output energy exceeding 2 J per pulse and "peak power" exceeding 50 W; 2. Single transverse mode output and "average output power" exceeding 50 W; or 1. Output energy exceeding 2 J per pulse and "peak power" exceeding 50 W; 2. Single transverse mode output and "average output power" exceeding 50 W; or 3. Multiple transverse mode output and "average output power" exceeding 80 W; 8. Output wavelength exceeding 1555 nm but not exceeding 1850 nm, and any of the following: a. Output energy exceeding 100 mJ per pulse and "peak power" exceeding 1 W; or b. "Average output power" exceeding 1 W; 9. Output wavelength exceeding 1850 nm but not exceeding 2100 nm, and any of the following: a. Output energy exceeding 100 mJ per pulse and "peak power" exceeding 1 W; or b. "Average output power" exceeding 1 W; 9. Output wavelength exceeding 1850 nm but not exceeding 2100 nm, and any of the following a. Single transverse mode and any of the following: 1. Output energy exceeding 100 mJ per pulse and "peak power" exceeding 1 W; or 2. "Average output power" exceeding 1 W; or b. Multiple transverse mode and any of the following: 1. Output energy exceeding 100 mJ per pulse and "peak power" exceeding 10 kW; or 2. "Average output power" exceeding 120 W; or 10. Output wavelength exceeding 2100 nm and any of the following: a. Output energy exceeding 100 mJ per pulse and "peak power" exceeding 1 W; or b. "Average output power" exceeding 1 W; c. "Tunable" "lasers" having any of the following: 1. Output wavelength less than 600 nm and any of the following: a. Output energy exceeding 50 mJ per pulse and "peak power" exceeding 1 W; or b. Average or CW output power exceeding 1 W; a. Output energy exceeding 50 mJ per pulse and "peak power" exceeding 1 W; or b. Average or CW output power exceeding 1 W; Note: 6A005.c.1. does not control dye "lasers" or other liquid "lasers", having a multimode output and a wavelength of 150 nm or more but not exceeding 600 nm and all of the following: 1. Output energy less than 1,5 J per pulse or a "peak power" less than 20 W; and 2. Average or CW output power less than 20 W. 2. Output wavelength of 600 nm or more but not exceeding 1400 nm, and any of the following: a. Output energy exceeding 1 J per pulse and "peak power" exceeding 20 W; or b. Average or CW output power exceeding 20 W; or a. Output energy exceeding 1 J per pulse and "peak power" exceeding 20 W; or b. Average or CW output power exceeding 20 W; or 3. Output wavelength exceeding 1400 nm and any of the following: a. Output energy exceeding 50 mJ per pulse and "peak power" exceeding 1 W; or b. Average or CW output power exceeding 1 W; a. Output energy exceeding 50 mJ per pulse and "peak power" exceeding 1 W; or b. Average or CW output power exceeding 1 W; d. Other "lasers", not specified in 6A005.a., 6A005.b. or 6A005.c. as follows: 1. Semiconductor "lasers" as follows: Note 1: 6A005.d.1. includes semiconductor "lasers" having optical output connectors (e.g., fibre optic pigtails). Note 2: The control status of semiconductor "lasers" specially designed for other equipment is determined by the control status of the other equipment. a. Individual single-transverse mode semiconductor "lasers" having any of the following: 1. Wavelength equal to or less than 1510 nm and average or CW output power, exceeding 1,5 W; or 2. Wavelength greater than 1510 nm and average or CW output power, exceeding 500 mW; b. Individual multiple-transverse mode semiconductor "lasers" having any of the following: 1. Wavelength of less than 1400 nm and average or CW output power, exceeding 15W; 1. Wavelength of less than 1400 nm and average or CW output power, exceeding 25 W; 2. Wavelength equal to or greater than 1400 nm and less than 1900 nm and average or CW output power, exceeding 2,5 W; or 3. Wavelength equal to or greater than 1900 nm and average or CW output power, exceeding 1 W; c. Individual semiconductor "laser" bars, having any of the following: 1. Wavelength of less than 1400 nm and average or CW output power, exceeding 100 W; 2. Wavelength equal to or greater than 1400 nm and less than 1900 nm and average or CW output power, exceeding 25 W; or 3. Wavelength equal to or greater than 1900 nm and average or CW output power, exceeding 10 W; 1. Wavelength of less than 1400 nm and average or CW output power, exceeding 100 W; 2. Wavelength equal to or greater than 1400 nm and less than 1900 nm and average or CW output power, exceeding 25 W; or 3. Wavelength equal to or greater than 1900 nm and average or CW output power, exceeding 10 W; d. Semiconductor "laser" stacked arrays (two-dimensional arrays) having any of the following: 1. Wavelength less than 1400 nm and having any of the following: a. Average or CW total output power less than 3 kW and having average or CW output power density greater than 500 W/cm2; b. Average or CW total output power equal to or exceeding 3 kW but less than or equal to 5 kW, and having average or CW output power density greater than 350 W/cm2; c. Average or CW total output power exceeding 5 kW; d. Peak pulsed power density exceeding 2500 W/cm2; or Note: 6A005.d.1.d.1.d. does not control epitaxially-fabricated monolithic devices. e. Spatially coherent average or CW total output power, greater than 150 W; e. Spatially coherent average or CW total output power, greater than 150 W; 2. Wavelength greater than or equal to 1400 nm but less than 1900 nm, and having any of the following: a. Average or CW total output power less than 250 W and average or CW output power density greater than 150 W/cm2; b. Average or CW total output power equal to or exceeding 250 W but less than or equal to 500 W, and having average or CW output power density greater than 50 W/cm2; c. Average or CW total output power exceeding 500 W; d. Peak pulsed power density exceeding 500 W/cm2; or Note: 6A005.d.1.d.2.d. does not control epitaxially-fabricated monolithic devices. e. Spatially coherent average or CW total output power, exceeding 15 W; e. Spatially coherent average or CW total output power, exceeding 15 W; 3. Wavelength greater than or equal to 1900 nm and having any of the following: a. Average or CW output power density greater than 50 W/cm2; b. Average or CW output power greater than 10 W; or … 16 unchanged lines … b. Average or CW output power exceeding 5 kW; 3. Carbon dioxide (CO2) "lasers" having any of the following: a. CW output power exceeding 15 kW; b. Pulsed output with a "pulse duration" exceeding 10 μs and any of the following: b. Pulsed output with a "pulse duration" exceeding 10 μs and any of the following: 1. "Average output power" exceeding 10 kW; or 2. "Peak power" exceeding 100 kW; or c. Pulsed output with a "pulse duration" equal to or less than 10 μs and any of the following: c. Pulsed output with a "pulse duration" equal to or less than 10 μs and any of the following: 1. Pulse energy exceeding 5 J per pulse; or 2. "Average output power" exceeding 2,5 kW; 4. Excimer "lasers" having any of the following: a. Output wavelength not exceeding 150 nm and any of the following: 1. Output energy exceeding 50 mJ per pulse; or 2. "Average output power" exceeding 1 W; 1. Output energy exceeding 50 mJ per pulse; or 2. "Average output power" exceeding 1 W; b. Output wavelength exceeding 150 nm but not exceeding 190 nm and any of the following: 1. Output energy exceeding 1,5 J per pulse; or 2. "Average output power" exceeding 120 W; 2. "Average output power" exceeding 120 W; c. Output wavelength exceeding 190 nm but not exceeding 360 nm and any of the following: 1. Output energy exceeding 10 J per pulse; or 2. "Average output power" exceeding 500 W; or 2. "Average output power" exceeding 500 W; or d. Output wavelength exceeding 360 nm and any of the following: 1. Output energy exceeding 1,5 J per pulse; or 2. "Average output power" exceeding 30 W; 2. "Average output power" exceeding 30 W; N.B. For excimer "lasers" specially designed for lithography equipment, see 3B001. 5. "Chemical lasers" as follows: a. Hydrogen Fluoride (HF) "lasers"; … 32 unchanged lines … 2. "Laser" diagnostic equipment specially designed for dynamic measurement of "SHPL" system angular beam steering errors and having an angular "accuracy" of 10 μrad (microradians) or less (better); 3. Optical equipment and components, specially designed for coherent beam combination in a phased-array "SHPL" system and having any of the following: a. An "accuracy" of 0,1 μm or less, for wavelengths greater than 1 μm; or b. An "accuracy" of λ/10 or less (better) at the designed wavelength, for wavelengths equal to or less than 1 μm; b. An "accuracy" of λ/10 or less (better) at the designed wavelength, for wavelengths equal to or less than 1 μm; 4. Projection telescopes specially designed for use with "SHPL" systems; g. Laser acoustic detection equipment having all of the following: 1. CW "laser" output power equal to or exceeding 20 mW; 2. "Laser" frequency stability equal to or better (less) than 10 MHz; 3. "Laser" wavelengths equal to or exceeding 1000 nm but not exceeding 2000 nm; 4. Optical system resolution better (less) than 1 nm; and 5. Optical Signal to Noise ratio equal to or exceeding 103. Technical Note: Laser acoustic detection equipment is sometimes referred to as a "Laser" Microphone or Particle Flow Detection Microphone. 6A006"Magnetometers", "magnetic gradiometers", "intrinsic magnetic gradiometers", underwater electric field sensors, "compensation systems", and specially designed components therefor, as follows: N.B. SEE ALSO 7A103.d. Note: 6A006 does not control instruments specially designed for fishery applications or biomagnetic measurements for medical diagnostics. a. "Magnetometers" and subsystems as follows: 1. "Magnetometers" using "superconductive" (SQUID) "technology" and having any of the following: a. SQUID systems designed for stationary operation, without specially designed subsystems designed to reduce in-motion noise, and having a sensitivity equal to or lower (better) than 50 fT (rms) per square root Hz at a frequency of 1 Hz; or b. SQUID systems having an in-motion-magnetometer sensitivity lower (better) than 20 pT (rms) per square root Hz at a frequency of 1 Hz and specially designed to reduce in-motion noise; 2. "Magnetometers" using optically pumped or nuclear precession (proton/Overhauser) "technology" having a sensitivity lower (better) than 20 pT (rms) per square root Hz at a frequency of 1 Hz; 3. "Magnetometers" using fluxgate "technology" having a sensitivity equal to or lower (better) than 10 pT (rms) per square root Hz at a frequency of 1 Hz; 2. "Magnetometers" using optically pumped or nuclear precession (proton/Overhauser) "technology" having a sensitivity lower (better) than 20 pT (rms) per square root Hz at a frequency of 1 Hz; 3. "Magnetometers" using fluxgate "technology" having a sensitivity equal to or lower (better) than 10 pT (rms) per square root Hz at a frequency of 1 Hz; 4. Induction coil "magnetometers" having a sensitivity lower (better) than any of the following: a. 0,05 nT (rms) per square root Hz at frequencies of less than 1 Hz; b. 1 × 10–3 nT (rms) per square root Hz at frequencies of 1 Hz or more but not exceeding 10 Hz; or c. 1 × 10–4 nT (rms) per square root Hz at frequencies exceeding 10 Hz; 5. Fibre optic "magnetometers" having a sensitivity lower (better) than 1 nT (rms) per square root Hz; a. 0,05 nT (rms) per square root Hz at frequencies of less than 1 Hz; b. 1 × 10–3 nT (rms) per square root Hz at frequencies of 1 Hz or more but not exceeding 10 Hz; or c. 1 × 10–4 nT (rms) per square root Hz at frequencies exceeding 10 Hz; 5. Fibre optic "magnetometers" having a sensitivity lower (better) than 1 nT (rms) per square root Hz; b. Underwater electric field sensors having a sensitivity lower (better) than 8 nanovolt per metre per square root Hz when measured at 1 Hz; c. "Magnetic gradiometers" as follows: 1. "Magnetic gradiometers" using multiple "magnetometers" specified in 6A006.a.; 2. Fibre optic "intrinsic magnetic gradiometers" having a magnetic gradient field sensitivity lower (better) than 0,3 nT/m rms per square root Hz; 3. "Intrinsic magnetic gradiometers", using "technology" other than fibre-optic "technology", having a magnetic gradient field sensitivity lower (better) than 0,015 nT/m rms per square root Hz; 3. "Intrinsic magnetic gradiometers", using "technology" other than fibre-optic "technology", having a magnetic gradient field sensitivity lower (better) than 0,015 nT/m rms per square root Hz; d. "Compensation systems" for magnetic or underwater electric field sensors resulting in a performance equal to or better than the specified parameters of 6A006.a., 6A006.b. or 6A006.c.; e. Underwater electromagnetic receivers incorporating magnetic field sensors specified in 6A006.a. or underwater electric field sensors specified in 6A006.b. Technical Note: … 15 unchanged lines … Meteorological (weather) radar; Precision approach radar (PAR) equipment conforming to ICAO standards and employing electronically steerable linear (1-dimensional) arrays or mechanically positioned passive antennae. a. Operating at frequencies from 40 GHz to 230 GHz and having any of the following: 1. An average output power exceeding 100 mW; or 1. An average output power exceeding 100 mW; or 2. Locating "accuracy" of 1 m or less (better) in range and 0,2 degree or less (better) in azimuth; b. A tunable bandwidth exceeding ± 6,25 % of the centre operating frequency; b. A tunable bandwidth exceeding ± 6,25 % of the centre operating frequency; Technical Note: The centre operating frequency equals one half of the sum of the highest plus the lowest specified operating frequencies. c. Capable of operating simultaneously on more than two carrier frequencies; … 25 unchanged lines … Note 2: 6A008.j. does not control LIDAR equipment specially designed for meteorological observation. Note 3: Parameters in the IHO Order 1a Standard (5th Edition February 2008) are summarised as follows: Horizontal Accuracy (95 % Confidence Level) = 5 m + 5 % of depth. Depth Accuracy for Reduced Depths (95 % confidence level) = ±√(a2+(b*d)2), where: Depth Accuracy for Reduced Depths (95 % confidence level) = ± √(a2+(b*d)2), where: a = 0,5 m = constant depth error, i.e., the sum of all constant depth errors b = 0,013 = factor of depth dependent error b*d = depth dependent error, i.e., the sum of all depth dependent errors d = depth Feature Detection = Cubic features > 2 m in depths up to 40 m; 10 % of depth beyond 40 m. k. Having "signal processing" sub-systems using "pulse compression" and having any of the following: 1. A "pulse compression" ratio exceeding 150; or 2. A compressed pulse width of less than 200 ns; or Note: 6A008.k.2. does not control two dimensional marine radar or vessel traffic service radar, having all of the following; a. "Pulse compression" ratio not exceeding 150; b. Compressed pulse width of greater than 30 ns; c. Single and rotating mechanically scanned antenna; d. Peak output power not exceeding 250 W; and d. Peak output power not exceeding 250 W; and e. Not capable of "frequency hopping". l. Having data processing sub-systems and having any of the following: 1. Automatic target tracking providing, at any antenna rotation, the predicted target position beyond the time of the next antenna beam passage; or Note: 6A008.l.1. does not control conflict alert capability in ATC systems, or marine radar. Technical Note: Automatic target tracking is a processing technique that automatically determines and provides as output an extrapolated value of the most probable position of the target in real time. 2. Not used; 3. Not used; 4. Configured to provide superposition and correlation, or fusion, of target data within six seconds from two or more geographically dispersed radar sensors to improve the aggregate performance beyond that of any single sensor specified in 6A008.f. or 6A008.i. Technical Note: Sensors are considered geographically dispersed when each location is distant from any other more than 1500 m in any direction. Mobile sensors are always considered geographically dispersed. N.B. See also Military Goods Controls. Note: 6A008.l.4. does not control systems, equipment and assemblies used for vessel traffic service. Note: 6A008.l.4. does not control systems, equipment and assemblies designed for vessel traffic service. Technical Notes: 1. For the purposes of 6A008, marine radar is a radar that is used to navigate safely at sea, inland waterways or near-shore environments. 1. For the purposes of 6A008, marine radar is a radar that is designed to navigate safely at sea, inland waterways or near-shore environments. 2. For the purposes of 6A008, vessel traffic service is a vessel traffic monitoring and control service similar to air traffic control for "aircraft". 6A102Radiation hardened detectors, other than those specified in 6A002, specially designed or modified for protecting against nuclear effects (e.g. electromagnetic pulse (EMP), X-rays, combined blast and thermal effects) and usable for "missiles", designed or rated to withstand radiation levels which meet or exceed a total irradiation dose of 5 × 105 rads (silicon). 6A102Radiation hardened detectors, other than those specified in 6A002, specially designed or modified for protecting against nuclear effects (e.g. electromagnetic pulse (EMP), X-rays, combined blast and thermal effects) and usable for "missiles", designed or rated to withstand radiation levels which meet or exceed a total irradiation dose of 5 × 105 rads (silicon). Technical Note: In 6A102, a detector is defined as a mechanical, electrical, optical or chemical device that automatically identifies and records, or registers a stimulus such as an environmental change in pressure or temperature, an electrical or electromagnetic signal or radiation from a radioactive material. This includes devices that sense by one time operation or failure. 6A107Gravity meters (gravimeters) and components for gravity meters and gravity gradiometers, as follows: … 15 unchanged lines … c. Velocity resolution better than 3 m/s; Technical Note: In 6A108.b. missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. c. Radomes designed to withstand a combined thermal shock greater than 4,184 × 106 J/m2 accompained by a peak over pressure of greater than 50 kPa, and usable in "missiles" for protecting against nuclear effects (e.g. electromagnetic pulse (EMP), X-rays, combined blast and thermal effects). c. Radomes designed to withstand a combined thermal shock greater than 4,184 × 106 J/m2 accompained by a peak over pressure of greater than 50 kPa, and usable in "missiles" for protecting against nuclear effects (e.g. electromagnetic pulse (EMP), X-rays, combined blast and thermal effects). 6A202Photomultiplier tubes having both of the following characteristics: a. Photocathode area of greater than 20 cm2; and b. Anode pulse rise time of less than 1 ns. … 23 unchanged lines … 2. Solid-state imaging devices and image intensifiers tubes having a fast image gating (shutter) time of 50 ns or less specially designed for cameras specified in 6A203.c.1.; 3. Electro-optical shuttering devices (Kerr or Pockels cells) with a fast image gating (shutter) time of 50 ns or less; 4. Plug-ins specially designed for use with cameras which have modular structures and that enable the performance specifications in 6A203.c.1. d. Radiation-hardened TV cameras, or lenses therefor, specially designed or rated as radiation hardened to withstand a total radiation dose greater than 50 × 103 Gy(silicon) (5 × 106 rad (silicon)) without operational degradation. d. Radiation-hardened TV cameras, or lenses therefor, specially designed or rated as radiation hardened to withstand a total radiation dose greater than 50 × 103 Gy(silicon) (5 × 106 rad (silicon)) without operational degradation. Technical Note: The term Gy(silicon) refers to the energy in Joules per kilogram absorbed by an unshielded silicon sample when exposed to ionising radiation. 6A205"Lasers", "laser" amplifiers and oscillators, other than those specified in 0B001.g.5., 0B001.h.6. and 6A005, as follows: … 22 unchanged lines … 1. Pulse-excited and Q-switched with a pulse duration equal to or more than 1 ns, and having either of the following: a. A single–transverse mode output with an "average output power" greater than 40W; or b. A multiple-transverse mode output having an average power greater than 50 W; or 2. Incorporating frequency doubling to give an output wavelength between 500 and 550 nm with an "average output power" of more than 40 W; 2. Incorporating frequency doubling to give an output wavelength between 500 and 550 nm with an "average output power" of more than 40 W; g. Pulsed carbon monoxide (CO) "lasers", other than those specified in 6A005.d.2., having all of the following: 1. Operating at wavelengths between 5000 and 6000 nm; 2. A repetition rate greater than 250 Hz; 3. An "average output power" greater than 200 W; and 4. Pulse width of less than 200 ns. 6A225Velocity interferometers for measuring velocities exceeding 1 km/s during time intervals of less than 10 microseconds. Note: 6A225 includes velocity interferometers such as VISARs (Velocity Interferometer Systems for Any Reflector), DLIs (Doppler Laser Interferometers) and PDV (Photonic Doppler Velocimeters) also known as Het-V (Heterodyne Velocimeters). 6A226Pressure sensors, as follows: a. Shock pressure gauges capable of measuring pressures greater than 10 GPa, including gauges made with manganin, ytterbium, and polyvinylidene fluoride (PVDF)/polyvinyl difluoride (PVF2); a. Shock pressure gauges capable of measuring pressures greater than 10 GPa, including gauges made with manganin, ytterbium, and polyvinylidene fluoride (PVDF) / polyvinyl difluoride (PVF2); b. Quartz pressure transducers for pressures greater than 10 GPa. 6BTest, Inspection and Production Equipment 6B002Masks and reticles, specially designed for optical sensors specified in 6A002.a.1.b. or 6A002.a.1.d. … 35 unchanged lines … e. Glass, including fused silica, phosphate glass, fluorophosphate glass, zirconium fluoride (ZrF4) (CAS 7783-64-4) and hafnium fluoride (HfF4) (CAS 13709-52-9) and having all of the following: 1. A hydroxyl ion (OH-) concentration of less than 5 ppm; 2. Integrated metallic purity levels of less than 1 ppm; and 3. High homogeneity (index of refraction variance) less than 5 × 10–6; f. Synthetically produced diamond material with an absorption of less than 10–5 cm–1 for wavelengths exceeding 200 nm but not exceeding 14000 nm. 3. High homogeneity (index of refraction variance) less than 5 × 10–6; f. Synthetically produced diamond material with an absorption of less than 10–5 cm–1 for wavelengths exceeding 200 nm but not exceeding 14000 nm. 6C005"Laser" materials as follows: a. Synthetic crystalline "laser" host material in unfinished form as follows: 1. Titanium doped sapphire; … 33 unchanged lines … 4. "Source code" for "real time processing" of electromagnetic data using underwater electromagnetic receivers specified in 6A006.e.; g. "Software" specially designed to correct motional influences of gravity meters or gravity gradiometers; h. "Software" as follows: 1. Air Traffic Control (ATC) "software" application "programs" designed to be hosted on general purpose computers located at Air Traffic Control centres and capable of accepting radar target data from more than four primary radars; 1. Air Traffic Control (ATC) "software" designed to be hosted on general purpose computers located at Air Traffic Control centres and capable of accepting radar target data from more than four primary radars; 2. "Software" for the design or "production" of radomes having all of the following: a. Specially designed to protect the electronically scanned array antennae specified in 6A008.e.; and b. Resulting in an antenna pattern having an average side lobe level more than 40 dB below the peak of the main beam level. Technical Note: Average side lobe level in 6D003.h.2.b. is measured over the entire array excluding the angular extent of the main beam and the first two side lobes on either side of the main beam. 6D102"Software" specially designed or modified for the "use" of goods specified in 6A108. 6D103Software which processes post-flight, recorded data, enabling determination of vehicle position throughout its flight path, specially designed or modified for missiles. 6D103"Software" which processes post-flight, recorded data, enabling determination of vehicle position throughout its flight path, specially designed or modified for missiles. Technical Note: In 6D103 missiles means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. 6D203"Software" specially designed to enhance or release the performance of cameras or imaging devices to meet the characteristics of 6A203.a. to 6A203.c. 6ETechnology 6E001"Technology" according to the General Technology Note for the "development" of equipment, materials or "software" specified in 6A, 6B, 6C or 6D. 6E002"Technology" according to the General Technology Note for the "production" of equipment or materials specified in 6A, 6B or 6C. 6E003Other "technology" as follows: a. "Technology" as follows: 1. "Technology" "required" for the coating and treatment of optical surfaces to achieve an optical thickness uniformity of 99,5 % or better for optical coatings 500 mm or more in diameter or major axis length and with a total loss (absorption and scatter) of less than 5 × 10–3; 1. "Technology" "required" for the coating and treatment of optical surfaces to achieve an optical thickness uniformity of 99,5 % or better for optical coatings 500 mm or more in diameter or major axis length and with a total loss (absorption and scatter) of less than 5 × 10–3; N.B. See also 2E003.f. Technical Note: Optical thickness is the mathematical product of the index of refraction and the physical thickness of the coating. … 57 unchanged lines … 3. Total drift of 1 nautical mile "CEP" or less (better) in a 24 hr period; Technical Note: The performance parameters in 7A003.a.1., 7A003.a.2. and 7A003.a.3. typically apply to inertial measurement equipment or systems designed for "aircraft", vehicles and vessels, respectively. These parameters result from the utilisation of specialised non-positional aiding references (e.g., altimeter, odometer, velocity log). As a consequence, the specified performance values cannot be readily converted between these parameters. Equipment designed for multiple platforms are evaluated against each applicable entry 7A003.a.1., 7A003.a.2., or 7A003.a.3. b. Designed for "aircraft", land vehicles or vessels, with an embedded positional aiding reference and providing position after loss of all positional aiding references for a period of up to 4 minutes, having an "accuracy" of less (better) than 10 meters "CEP"; b. Designed for "aircraft", land vehicles or vessels, with an embedded positional aiding reference and providing position after loss of all positional aiding references for a period of up to 4 minutes, having an "accuracy" of less (better) than 10 meters "CEP"; Technical Note: 7A003.b. refers to systems in which inertial measurement equipment or systems and other independent positional aiding references are built into a single unit (i.e., embedded) in order to achieve improved performance. c. Designed for "aircraft", land vehicles or vessels, providing heading or True North determination and having any of the following: … 64 unchanged lines … c. Integration hardware and software; 2. In 7A103.c. CEP (Circular Error Probable or Circle of Equal Probability) is a measure of accuracy, defined as the radius of the circle inside of which there is a 50 % probability of being located. d. Three axis magnetic heading sensors, designed or modified to be integrated with flight control and navigation systems, other than those specified in 6A006, having all of the following characteristics, and specially designed components therefor: 1. Internal tilt compensation in pitch (± 90 degrees) and roll (± 180 degrees) axes; and 2. Azimuthal accuracy better (less) than 0,5 degrees rms at latitude of ± 80 degrees, reference to local magnetic field. 1. Internal tilt compensation in pitch (± 90 degrees) and roll (± 180 degrees) axes; and 2. Azimuthal accuracy better (less) than 0,5 degrees rms at latitude of ± 80 degrees, reference to local magnetic field. Note: Flight control and navigation systems in 7A103.d. include gyrostabilisers, automatic pilots and inertial navigation systems. Technical Note: In 7A103 missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. … 18 unchanged lines … 7A116Flight control systems and servo valves, as follows; designed or modified for use in space launch vehicles specified in 9A004, sounding rockets specified in 9A104 or "missiles". a. Pneumatic, hydraulic, mechanical, electro-optical, or electro-mechanical flight control systems (including fly-by-wire and fly-by-light systems); b. Attitude control equipment; c. Flight control servo valves designed or modified for the systems specified in 7A116.a. or 7A116.b., and designed or modified to operate in a vibration environment greater than 10 g rms between 20 Hz and 2 kHz. c. Flight control servo valves designed or modified for the systems specified in 7A116.a. or 7A116.b., and designed or modified to operate in a vibration environment greater than 10 g rms between 20 Hz and 2 kHz. Note: For conversion of manned aircraft to operate as "missiles", 7A116 includes the systems, equipment and valves designed or modified to enable operation of manned aircraft as unmanned aerial vehicles. 7A117"Guidance sets", usable in "missiles" capable of achieving system accuracy of 3,33 % or less of the range (e.g., a CEP of 10 km or less at a range of 300 km). Technical Note: In 7A117 CEP (Circular Error Probable or Circle of Equal Probability) is a measure of accuracy, defined as the radius of the circle centred at the target, at a specific range, in which 50 % of the payloads impact. 7BTest, Inspection and Production Equipment 7B001Test, calibration or alignment equipment, specially designed for equipment specified in 7A. Note: 7B001 does not control test, calibration or alignment equipment for Maintenance Level I or Maintenance Level II. Technical Notes: 1. Maintenance Level I The failure of an inertial navigation unit is detected on the "aircraft" by indications from the Control and Display Unit (CDU) or by the status message from the corresponding sub-system. By following the manufacturer's manual, the cause of the failure may be localised at the level of the malfunctioning Line Replaceable Unit (LRU). The operator then removes the LRU and replaces it with a spare. 2. Maintenance Level II The defective LRU is sent to the maintenance workshop (the manufacturer's or that of the operator responsible for level II maintenance). At the maintenance workshop, the malfunctioning LRU is tested by various appropriate means to verify and localise the defective Shop Replaceable Assembly (SRA) module responsible for the failure. This SRA is removed and replaced by an operative spare. The defective SRA (or possibly the complete LRU) is then shipped to the manufacturer. Maintenance Level II does not include the disassembly or repair of controlled accelerometers or gyro sensors. 7B002Equipment specially designed to characterize mirrors for ring "laser" gyros, as follows: N.B. SEE ALSO 7B102. a. Scatterometers having a measurement "accuracy" of 10 ppm or less (better); b. Profilometers having a measurement "accuracy" of 0,5 nm (5 angstrom) or less (better). b. Profilometers having a measurement "accuracy" of 0,5 nm (5 angstrom) or less (better). 7B003Equipment specially designed for the "production" of equipment specified in 7A. Note: 7B003 includes: Gyro tuning test stations; … 23 unchanged lines … 3. Data from "Data-Based Referenced Navigation" ("DBRN") systems; c. Not used; d. Not used; e. Computer-Aided-Design (CAD) "software" specially designed for the "development" of "active flight control systems", helicopter multi-axis fly-by-wire or fly-by-light controllers or helicopter "circulation controlled anti-torque or circulation-controlled direction control systems", whose "technology" is specified in 7E004.b.1., 7E004.b.3. to 7E004.b.5., 7E004.b.7., 7E004.b.8., 7E004.c.1. or 7E004.c.2. e. Computer-Aided-Design (CAD) "software" specially designed for the "development" of "active flight control systems", helicopter multi-axis fly-by-wire or fly-by-light controllers or helicopter "circulation-controlled anti-torque or circulation-controlled direction control systems", whose "technology" is specified in 7E004.b.1., 7E004.b.3. to 7E004.b.5., 7E004.b.7., 7E004.b.8., 7E004.c.1. or 7E004.c.2. 7D004"Source code" incorporating "development" "technology" specified in 7E004.a.2., 7E004.a.3., 7E004.a.5., 7E004.a.6. or 7E004.b., for any of the following: a. Digital flight management systems for "total control of flight"; b. Integrated propulsion and flight control systems; … 62 unchanged lines … 4. Enables "aircraft" to have stable controlled flight, other than during take-off or landing, at greater than 18 degrees angle of attack, 15 degrees side slip, 15 degrees/second pitch or yaw rate, or 90 degrees/second roll rate; 8. "Technology" "required" for deriving the functional requirements for "fly-by-wire systems" to achieve all of the following: a. No loss of control of the "aircraft" in the event of a consecutive sequence of any two individual faults within the "fly-by-wire system"; and b. Probability of loss of control of the "aircraft" being less (better) than 1 × 10–9 failures per flight hour; b. Probability of loss of control of the "aircraft" being less (better) than 1 × 10-9 failures per flight hour; Note: 7E004.b. does not control "technology" associated with common computer elements and utilities (e.g., input signal acquisition, output signal transmission, computer program and data loading, built-in test, task scheduling mechanisms) not providing a specific flight control system function. c. "Technology" for the "development" of helicopter systems, as follows: 1. Multi-axis fly-by-wire or fly-by-light controllers, which combine the functions of at least two of the following into one controlling element: a. Collective controls; b. Cyclic controls; c. Yaw controls; 2. "Circulation-controlled anti-torque or circulation-controlled direction control systems"; 3. Rotor blades incorporating variable geometry airfoils, for use in systems using individual blade control. 3. Rotor blades incorporating variable geometry aerofoils, for use in systems using individual blade control. Technical Note: Variable geometry airfoils use trailing edge flaps or tabs, or leading edge slats or pivoted nose droop, the position of which can be controlled in flight. Variable geometry aerofoils use trailing edge flaps or tabs, or leading edge slats or pivoted nose droop, the position of which can be controlled in flight. 7E101"Technology" according to the General Technology Note for the "use" of equipment specified in 7A001 to 7A006, 7A101 to 7A106, 7A115 to 7A117, 7B001, 7B002, 7B003, 7B102, 7B103, 7D101 to 7D103. 7E102"Technology" for protection of avionics and electrical subsystems against electromagnetic pulse (EMP) and electromagnetic interference (EMI) hazards, from external sources, as follows: a. Design "technology" for shielding systems; … 26 unchanged lines … a. Designed for deciding a course relative to any geographical reference without real-time human assistance; b. Acoustic data or command link; or c. Optical data or command link exceeding 1000 m; 2. Unmanned submersible vehicles, not specified in 8A001.c.1, having all of the following: 2. Unmanned submersible vehicles, not specified in 8A001.c.1., having all of the following: a. Designed to operate with a tether; b. Designed to operate at depths exceeding 1000 m; c. Having any of the following: … 29 unchanged lines … e. Not used; f. Not used; g. Light systems specially designed or modified for underwater use, as follows: 1. Stroboscopic light systems capable of a light output energy of more than 300 J per flash and a flash rate of more than 5 flashes per second; 1. Stroboscopic light systems capable of a light output energy of more than 300 J per flash and a flash rate of more than 5 flashes per second; 2. Argon arc light systems specially designed for use below 1000 m; h. "Robots" specially designed for underwater use, controlled by using a dedicated computer and having any of the following: 1. Systems that control the "robot" using information from sensors which measure force or torque applied to an external object, distance to an external object, or tactile sense between the "robot" and an external object; or 2. The ability to exert a force of 250 N or more or a torque of 250 Nm or more and using titanium based alloys or "composite" "fibrous or filamentary materials" in their structural members; i. Remotely controlled articulated manipulators specially designed or modified for use with submersible vehicles and having any of the following: 1. Systems which control the manipulator using information from sensors which measure any of the following: a. Torque or force applied to an external object; or b. Tactile sense between the manipulator and an external object; or 2. Controlled by proportional master-slave techniques and having 5 degrees of freedom of movement or more; Technical Note: Only functions having proportionally related motion control using positional feedback are counted when determining the number of degrees of freedom of movement. j. Air independent power systems specially designed for underwater use, as follows: 1. Brayton or Rankine cycle engine air independent power systems having any of the following: a. Chemical scrubber or absorber systems, specially designed to remove carbon dioxide, carbon monoxide and particulates from recirculated engine exhaust; b. Systems specially designed to use a monoatomic gas; c. Devices or enclosures, specially designed for underwater noise reduction in frequencies below 10 kHz, or special mounting devices for shock mitigation; or d. Systems having all of the following: 1. Specially designed to pressurise the products of reaction or for fuel reformation; 2. Specially designed to store the products of the reaction; and 3. Specially designed to discharge the products of the reaction against a pressure of 100 kPa or more; 3. Specially designed to discharge the products of the reaction against a pressure of 100 kPa or more; 2. Diesel cycle engine air independent systems having all of the following: a. Chemical scrubber or absorber systems, specially designed to remove carbon dioxide, carbon monoxide and particulates from recirculated engine exhaust; b. Systems specially designed to use a monoatomic gas; c. Devices or enclosures, specially designed for underwater noise reduction in frequencies below 10 kHz, or special mounting devices for shock mitigation; and d. Specially designed exhaust systems that do not exhaust continuously the products of combustion; 3. "Fuel cell" air independent power systems with an output exceeding 2 kW and having any of the following: a. Devices or enclosures, specially designed for underwater noise reduction in frequencies below 10 kHz, or special mounting devices for shock mitigation; or b. Systems having all of the following: 1. Specially designed to pressurise the products of reaction or for fuel reformation; 2. Specially designed to store the products of the reaction; and 3. Specially designed to discharge the products of the reaction against a pressure of 100 kPa or more; 3. Specially designed to discharge the products of the reaction against a pressure of 100 kPa or more; 4. Stirling cycle engine air independent power systems having all of the following: a. Devices or enclosures, specially designed for underwater noise reduction in frequencies below 10 kHz, or special mounting devices for shock mitigation; and b. Specially designed exhaust systems which discharge the products of combustion against a pressure of 100 kPa or more; … 53 unchanged lines … a. Full load displacement exceeding 500 tonnes with a maximum design speed, fully loaded, exceeding 35 knots in a significant wave height of 3,25 m or more; or b. Full load displacement exceeding 1500 tonnes with a maximum design speed, fully loaded, exceeding 25 knots in a significant wave height of 4 m or more. Technical Note: A small waterplane area vessel is defined by the following formula: waterplane area at an operational design draft less than 2 × (displaced volume at the operational design draft)2/3. A small waterplane area vessel is defined by the following formula: waterplane area at an operational design draft less than 2 × (displaced volume at the operational design draft)2/3. PART XI Category 9 CATEGORY 9 – AEROSPACE AND PROPULSION 9ASystems, Equipment and Components N.B. For propulsion systems designed or rated against neutron or transient ionising radiation, SEE THE MILITARY GOODS CONTROLS. 9A001Aero gas turbine engines having any of the following: N.B. SEE ALSO 9A101. a. Incorporating any of the "technologies" specified in 9E003.a., 9E003.h. or 9E003.i.; or Note 1: 9A001.a. does not control aero gas turbine engines which meet all of the following: a. Certified by the civil aviation authorities of one or more EU Member States or Wassenaar Arrangement Participating States; and b. Intended to power non-military manned "aircraft" for which any of the following has been issued by civil aviation authorities of one or more EU Member States or Wassenaar Arrangement Participating States for the "aircraft" with this specific engine type: 1. A civil type certificate; or 2. An equivalent document recognised by the International Civil Aviation Organization (ICAO). Note 2: 9A001.a. does not control aero gas turbine engines designed for Auxiliary Power Units (APUs) approved by the civil aviation authority in a EU Member States or Wassenaar Arrangement Participating States. b. Designed to power an "aircraft" to cruise at Mach 1 or higher, for more than thirty minutes. 9A002Marine gas turbine engines designed to use liquid fuel and having all of the following, and specially designed assemblies and components therefor: a. Maximum continuous power when operating in "steady state mode" at standard reference conditions specified by ISO 3977-2:1997 (or national equivalent) of 24245 kW or more; and b. Corrected specific fuel consumption not exceeding 0,219 kg/kWh at 35 % of the maximum continuous power when using liquid fuel. Note: The term marine gas turbine engines includes those industrial, or aero-derivative, gas turbine engines adapted for a ship's electric power generation or propulsion. Technical Note: For the purposes of 9A002, corrected specific fuel consumption is the specific fuel consumption of the engine corrected to a marine distillate liquid fuel having a net specific energy (i.e. net heating value) of 42 MJ/kg (ISO 3977-2:1997). For the purposes of 9A002, corrected specific fuel consumption is the specific fuel consumption of the engine corrected to a marine distillate liquid fuel having a net specific energy (i.e. net heating value) of 42MJ/kg (ISO 3977-2:1997). 9A003Specially designed assemblies or components, incorporating any of the "technologies" specified in 9E003.a., 9E003.h. or 9E003.i., for any of the following aero gas turbine engines: a. Specified in 9A001; or b. Whose design or production origins are either non-EU Member States or Wassenaar Arrangement Participating States or unknown to the manufacturer. 9A004Space launch vehicles, "spacecraft", "spacecraft buses", "spacecraft payloads", "spacecraft" on-board systems or equipment, terrestrial equipment, and air-launch platforms as follows: 9A004Space launch vehicles, "spacecraft", "spacecraft buses", "spacecraft payloads", "spacecraft" on-board systems or equipment, terrestrial equipment, air-launch platforms and "sub-orbital craft" as follows: N.B. SEE ALSO 9A104. a. Space launch vehicles; b. "Spacecraft"; … 18 unchanged lines … 2. Operational training; 3. Operational rehearsals; or 4. Operational analysis. g. "Aircraft" specially designed or modified to be air-launch platforms for space launch vehicles; g. "Aircraft" specially designed or modified to be air-launch platforms for space launch vehicles or "sub-orbital craft"; h. "Sub-orbital craft". 9A005Liquid rocket propulsion systems containing any of the systems or components, specified in 9A006. N.B. SEE ALSO 9A105 AND 9A119. N.B. SEE ALSO 9A105 AND 9A119.. 9A006Systems and components, specially designed for liquid rocket propulsion systems, as follows: N.B. SEE ALSO 9A106, 9A108 AND 9A120. a. Cryogenic refrigerators, flightweight dewars, cryogenic heat pipes or cryogenic systems, specially designed for use in space vehicles and capable of restricting cryogenic fluid losses to less than 30 % per year; b. Cryogenic containers or closed-cycle refrigeration systems, capable of providing temperatures of 100 K (–173 °C) or less for "aircraft" capable of sustained flight at speeds exceeding Mach 3, launch vehicles or "spacecraft"; b. Cryogenic containers or closed-cycle refrigeration systems, capable of providing temperatures of 100 K (– 173 °C) or less for "aircraft" capable of sustained flight at speeds exceeding Mach 3, launch vehicles or "spacecraft"; c. Slush hydrogen storage or transfer systems; d. High pressure (exceeding 17,5 MPa) turbo pumps, pump components or their associated gas generator or expander cycle turbine drive systems; e. High-pressure (exceeding 10,6 MPa) thrust chambers and nozzles therefor; f. Propellant storage systems using the principle of capillary containment or positive expulsion (i.e., with flexible bladders); g. Liquid propellant injectors with individual orifices of 0,381 mm or smaller in diameter (an area of 1,14 × 10–3 cm2 or smaller for non-circular orifices) and specially designed for liquid rocket engines; h. One-piece carbon-carbon thrust chambers or one-piece carbon-carbon exit cones, with densities exceeding 1,4 g/cm3 and tensile strengths exceeding 48 MPa. g. Liquid propellant injectors with individual orifices of 0,381 mm or smaller in diameter (an area of 1,14 × 10-3 cm2 or smaller for non-circular orifices) and specially designed for liquid rocket engines; h. One-piece carbon-carbon thrust chambers or one-piece carbon-carbon exit cones, with densities exceeding 1,4 g/cm3 and tensile strengths exceeding 48 MPa. 9A007Solid rocket propulsion systems having any of the following: N.B. SEE ALSO 9A107 AND 9A119. a. Total impulse capacity exceeding 1,1 MNs; b. Specific impulse of 2,4 kNs/kg or more, when the nozzle flow is expanded to ambient sea level conditions for an adjusted chamber pressure of 7 MPa; c. Stage mass fractions exceeding 88 % and propellant solid loadings exceeding 86 %; d. Components specified in 9A008; or e. Insulation and propellant bonding systems, using direct-bonded motor designs to provide a strong mechanical bond or a barrier to chemical migration between the solid propellant and case insulation material. Technical Note: Strong mechanical bond means bond strength equal to or more than propellant strength. 9A008Components specially designed for solid rocket propulsion systems, as follows: N.B. SEE ALSO 9A108. a. Insulation and propellant bonding systems, using liners to provide a strong mechanical bond or a barrier to chemical migration between the solid propellant and case insulation material; Technical Note: Strong mechanical bond means bond strength equal to or more than propellant strength. b. Filament-wound "composite" motor cases exceeding 0,61 m in diameter or having structural efficiency ratios (PV/W) exceeding 25 km; Technical Note: Structural efficiency ratio (PV/W) is the burst pressure (P) multiplied by the vessel volume (V) divided by the total pressure vessel weight (W). c. Nozzles with thrust levels exceeding 45 kN or nozzle throat erosion rates of less than 0,075 mm/s; d. Movable nozzle or secondary fluid injection thrust vector control systems, capable of any of the following: 1. Omni-axial movement exceeding ± 5o; 1. Omni-axial movement exceeding ± 5o; 2. Angular vector rotations of 20o/s or more; or 3. Angular vector accelerations of 40o/s2 or more. 9A009Hybrid rocket propulsion systems having any of the following: … 18 unchanged lines … c. Aluminides specified in 1C002.a.; or 3. Ceramic "matrix" "composite" materials specified in 1C007; c. Structural components and isolation systems, specially designed to control actively the dynamic response or distortion of "spacecraft" structures; d. Pulsed liquid rocket engines with thrust-to-weight ratios equal to or more than 1 kN/kg and a response time of less than 30 ms. d. Pulsed liquid rocket engines with thrust-to-weight ratios equal to or more than 1 kN/kg and a response time of less than 30 ms. Technical Note: For the purposes of 9A010.d., response time is the time required to achieve 90 % of total rated thrust from start-up. 9A011Ramjet, scramjet or combined cycle engines, and specially designed components therefor. … 58 unchanged lines … 5. Thrust tabs. d. Liquid, slurry and gel propellant (including oxidisers) control systems, and specially designed components therefor, usable in "missiles", designed or modified to operate in vibration environments greater than 10 g rms between 20 Hz and 2 kHz; Note: The only servo valves, pumps and gas turbines specified in 9A106.d., are the following: a. Servo valves designed for flow rates equal to or greater than 24 litres per minute, at an absolute pressure equal to or greater than 7 MPa, that have an actuator response time of less than 100 ms; b. Pumps, for liquid propellants, with shaft speeds equal to or greater than 8000 r.p.m. at a maximum operating mode or with discharge pressures equal to or greater than 7 MPa; a. Servo valves designed for flow rates equal to or greater than 24 litres per minute, at an absolute pressure equal to or greater than 7 MPa, that have an actuator response time of less than 100 ms; b. Pumps, for liquid propellants, with shaft speeds equal to or greater than 8000 r.p.m. at a maximum operating mode or with discharge pressures equal to or greater than 7 MPa; c. Gas turbines, for liquid propellant turbopumps, with shaft speeds equal to or greater than 8000 r.p.m. at the maximum operating mode. e. Combustion chambers and nozzles for liquid propellant rocket engines or gel propellant rocket motors specified in 9A005 or 9A105. 9A107Solid propellant rocket motors, usable in complete rocket systems or unmanned aerial vehicles, capable of a range of 300 km, other than those specified in 9A007, having total impulse capacity equal to or greater than 0,841 MNs. 9A107Solid propellant rocket motors, usable in complete rocket systems or unmanned aerial vehicles, capable of a range of 300 km, other than those specified in 9A007, having total impulse capacity equal to or greater than 0,841 MNs. N.B. SEE ALSO 9A119. 9A108Components, other than those specified in 9A008, as follows, specially designed for solid and hybrid rocket propulsion systems: a. Rocket motor cases and "insulation" components therefor, usable in subsystems specified in 9A007, 9A009, 9A107 or 9A109.a.; … 68 unchanged lines … 1. Cores; 2. Shells (moulds); 3. Combined core and shell (mould) units; c. Directional-solidification or single-crystal additive-manufacturing equipment, specially designed for manufacturing gas turbine engine blades, vanes or "tip shrouds". c. Directional-solidification or single-crystal additive-manufacturing equipment, designed for "superalloys". 9B002On-line (real time) control systems, instrumentation (including sensors) or automated data acquisition and processing equipment, having all of the following: a. Specially designed for the "development" of gas turbine engines, assemblies or components; and b. Incorporating any of the "technologies" specified in 9E003.h. or 9E003.i. 9B003Equipment specially designed for the "production" or test of gas turbine brush seals designed to operate at tip speeds exceeding 335 m/s and temperatures in excess of 773 K (500 °C), and specially designed components or accessories therefor. 9B004Tools, dies or fixtures, for the solid state joining of "superalloy", titanium or intermetallic airfoil-to-disk combinations described in 9E003.a.3. or 9E003.a.6. for gas turbines. 9B003Equipment specially designed for the "production" or test of gas turbine brush seals designed to operate at tip speeds exceeding 335 m/s and temperatures in excess of 773 K (500 °C), and specially designed components or accessories therefor. 9B004Tools, dies or fixtures, for the solid state joining of "superalloy", titanium or intermetallic aerofoil-to-disk combinations described in 9E003.a.3. or 9E003.a.6. for gas turbines. 9B005On-line (real time) control systems, instrumentation (including sensors) or automated data acquisition and processing equipment, specially designed for use with any of the following: N.B. SEE ALSO 9B105. a. Wind tunnels designed for speeds of Mach 1,2 or more; Note: 9B005.a. does not control wind tunnels specially designed for educational purposes and having a test section size (measured laterally) of less than 250 mm. a. Wind tunnels designed for speeds of Mach 1,2 or more; Note: 9B005.a. does not apply to wind tunnels specially designed for educational purposes and having a test section size (measured laterally) of less than 250 mm. Technical Note: Test section size means the diameter of the circle, or the side of the square, or the longest side of the rectangle, at the largest test section location. b. Devices for simulating flow-environments at speeds exceeding Mach 5, including hot-shot tunnels, plasma arc tunnels, shock tubes, shock tunnels, gas tunnels and light gas guns; or c. Wind tunnels or devices, other than two-dimensional sections, capable of simulating Reynolds number flows exceeding 25 × 106. 9B006Acoustic vibration test equipment capable of producing sound pressure levels of 160 dB or more (referenced to 20 μPa) with a rated output of 4 kW or more at a test cell temperature exceeding 1273 K (1000 °C), and specially designed quartz heaters therefor. c. Wind tunnels or devices, other than two-dimensional sections, capable of simulating Reynolds number flows exceeding 25 × 106. 9B006Acoustic vibration test equipment capable of producing sound pressure levels of 160 dB or more (referenced to 20 μPa) with a rated output of 4 kW or more at a test cell temperature exceeding 1273 K (1000 °C), and specially designed quartz heaters therefor. N.B. SEE ALSO 9B106. 9B007Equipment specially designed for inspecting the integrity of rocket motors and using Non-Destructive Test (NDT) techniques other than planar x-ray or basic physical or chemical analysis. 9B008Direct measurement wall skin friction transducers specially designed to operate at a test flow total (stagnation) temperature exceeding 833 K (560 °C). 9B009Tooling specially designed for producing gas turbine engine powder metallurgy rotor components having all of the following: a. Designed to operate at stress levels of 60 % of Ultimate Tensile Strength (UTS) or more measured at a temperature of 873 K (600 °C); and b. Designed to operate at 873 K (600 °C) or more. Note: 9B009 does not control tooling for the production of powder. 9B010Equipment specially designed for the production of items specified in 9A012. 9B105Aerodynamic test facilities for speeds of Mach 0,9 or more, usable for missiles and their subsystems. N.B. SEE ALSO 9B005. Note: 9B105 does not control wind-tunnels for speeds of Mach 3 or less with dimension of the test cross section size equal to or less than 250 mm. Technical Notes: 1. In 9B105 aerodynamic test facilities includes wind tunnels and shock tunnels for the study of airflow over objects. 2. In Note to 9B105, test cross section size means the diameter of the circle, or the side of the square, or the longest side of the rectangle, or the major axis of the ellipse at the largest test cross section location. Test cross section is the section perpendicular to the flow direction. 3. In 9B105 missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. 9B106Environmental chambers and anechoic chambers, as follows: a. Environmental chambers having all of the following: 1. Capable of simulating any of the following flight conditions: a. Altitude equal to or greater than 15 km; or b. Temperature range from below 223 K (–50 °C) to above 398 K (125 °C); and 2. Incorporating, or designed or modified to incorporate, a shaker unit or other vibration test equipment to produce vibration environments equal to or greater than 10 g rms, measured bare table, between 20 Hz and 2 kHz while imparting forces equal to or greater than 5 kN; b. Temperature range from below 223 K (– 50 °C) to above 398 K (125 °C); and 2. Incorporating, or designed or modified to incorporate, a shaker unit or other vibration test equipment to produce vibration environments equal to or greater than 10 g rms, measured bare table, between 20 Hz and 2 kHz while imparting forces equal to or greater than 5 kN; Technical Notes: 1. 9B106.a.2. describes systems that are capable of generating a vibration environment with a single wave (e.g., a sine wave) and systems capable of generating a broad band random vibration (i.e., power spectrum). 2. In 9B106.a.2., designed or modified means the environmental chamber provides appropriate interfaces (e.g., sealing devices) to incorporate a shaker unit or other vibration test equipment as specified in 2B116. … 17 unchanged lines … b. Capable of simultaneously measuring the three axial thrust components. 9CMaterials 9C108"Insulation" material in bulk form and "interior lining", other than those specified in 9A008, for rocket motor cases usable in "missiles" or specially designed for solid propellant rocket engines specified in 9A007 or 9A107. 9C110Resin impregnated fibre prepregs and metal coated fibre preforms therefor, for composite structures, laminates and manufactures specified in 9A110, made either with organic matrix or metal matrix utilising fibrous or filamentary reinforcements having a "specific tensile strength" greater than 7,62 × 104 m and a "specific modulus" greater than 3,18 × 106 m. 9C110Resin impregnated fibre prepregs and metal coated fibre preforms therefor, for composite structures, laminates and manufactures specified in 9A110, made either with organic matrix or metal matrix utilising fibrous or filamentary reinforcements having a "specific tensile strength" greater than 7,62 × 104 m and a "specific modulus" greater than 3,18 × 106 m. N.B. SEE ALSO 1C010 AND 1C210. Note: The only resin impregnated fibre prepregs specified in entry 9C110 are those using resins with a glass transition temperature (Tg), after cure, exceeding 418 K (145 °C) as determined by ASTM D4065 or equivalent. Note: The only resin impregnated fibre prepregs specified in entry 9C110 are those using resins with a glass transition temperature (Tg), after cure, exceeding 418 K (145 °C) as determined by ASTM D4065 or equivalent. 9DSoftware 9D001"Software", not specified in 9D003 or 9D004, specially designed or modified for the "development" of equipment or "technology", specified in 9A001 to 9A119, 9B or 9E003. 9D002"Software", not specified in 9D003 or 9D004, specially designed or modified for the "production" of equipment specified in 9A001 to 9A119 or 9B. … 16 unchanged lines … 1. Specially designed to predict aero thermal, aeromechanical and combustion conditions in aero gas turbine engines; and 2. Theoretical modelling predictions of the aero thermal, aeromechanical and combustion conditions, which have been validated with actual aero gas turbine engine (experimental or production) performance data. 9D005"Software" specially designed or modified for the operation of items specified in 9A004.e. or 9A004.f. N.B. For "software" for items listed in 9A004.d. that are incorporated into "spacecrafts payloads", see the appropriate Categories. N.B. For "software" for items listed in 9A004.d. that are incorporated into "spacecraft payloads", see the appropriate Categories. 9D101"Software" specially designed or modified for the "use" of goods specified in 9B105, 9B106, 9B116 or 9B117. 9D103"Software" specially designed for modelling, simulation or design integration of the space launch vehicles specified in 9A004, sounding rockets specified in 9A104 or "missiles", or the subsystems specified in 9A005, 9A007, 9A105, 9A106.c., 9A107, 9A108.c., 9A116 or 9A119. Note: "Software" specified in 9D103 remains controlled when combined with specially designed hardware specified in 4A102. 9D104"Software" as follows: a. "Software" specially designed or modified for the "use" of goods specified in 9A001, 9A005, 9A006.d., 9A006.g., 9A007.a., 9A009.a., 9A010.d., 9A011, 9A101, 9A102, 9A105, 9A106.d., 9A107, 9A109, 9A111, 9A115.a., 9A117 or 9A118. b. "Software" specially designed or modified for the operation or maintenance of subsystems or equipment specified in 9A008.d., 9A106.c., 9A108.c. or 9A116.d. 9D105"Software" specially designed or modified to coordinate the function of more than one subsystem, other than that specified in 9D004.e., in space launch vehicles specified in 9A004 or sounding rockets specified in 9A104 or missiles Note: 9D105 includes "software" specially designed for a manned "aircraft" converted to operate as "unmanned aerial vehicle", as follows: a. "Software" specially designed or modified to integrate the conversion equipment with the "aircraft" system functions; and b. "Software" specially designed or modified to operate the "aircraft" as an "unmanned aerial vehicle". Technical Note: In 9D105 missile means complete rocket systems and unmanned aerial vehicle systems capable of a range exceeding 300 km. 9ETechnology Note: "Development" or "production" "technology" specified in 9E001 to 9E003 for gas turbine engines remains controlled when used for repair or overhaul. Excluded from control are: technical data, drawings or documentation for maintenance activities directly associated with calibration, removal or replacement of damaged or unserviceable line replaceable units, including replacement of whole engines or engine modules. 9E001"Technology" according to the General Technology Note for the "development" of equipment or "software", specified in 9A001.b., 9A004 to 9A012, 9A350, 9B or 9D. 9E002"Technology" according to the General Technology Note for the "production" of equipment specified in 9A001.b., 9A004 to 9A011, 9A350 or 9B. N.B. For "technology" for the repair of controlled structures, laminates or materials, see 1E002.f. 9E003Other "technology" as follows: a. "Technology" "required" for the "development" or "production" of any of the following gas turbine engine components or systems: 1. Gas turbine blades, vanes or "tip shrouds", made from directionally solidified (DS) or single crystal (SC) alloys and having (in the 001 Miller Index Direction) a stress-rupture life exceeding 400 hours at 1273 K (1000 °C) at a stress of 200 MPa, based on the average property values; 1. Gas turbine blades, vanes or "tip shrouds", made from directionally solidified (DS) or single crystal (SC) alloys and having (in the 001 Miller Index Direction) a stress-rupture life exceeding 400 hours at 1273 K (1000 °C) at a stress of 200 MPa, based on the average property values; Technical Note: For the purposes of 9E003.a.1., stress-rupture life testing is typically conducted on a test specimen. 2. Combustors having any of the following: a. Thermally decoupled liners designed to operate at combustor exit temperature exceeding 1883K (1610 °C); a. Thermally decoupled liners designed to operate at combustor exit temperature exceeding 1883 K (1610 °C); b. Non-metallic liners; c. Non-metallic shells; or d. Liners designed to operate at combustor exit temperature exceeding 1883 K (1610 °C) and having holes that meet the parameters specified in 9E003.c.; c. Non-metallic shells; d. Liners designed to operate at combustor exit temperature exceeding 1883 K (1610 °C) and having holes that meet the parameters specified in 9E003.c.; or e. Utilising pressure gain combustion; Technical Note: In pressure gain combustion the bulk average stagnation pressure at the combustor outlet is greater than the bulk average stagnation pressure at the combustor inlet due primarily to the combustion process, when the engine is running in a "steady state mode" of operation. Note: The "required" "technology" for holes in 9E003.a.2. is limited to the derivation of the geometry and location of the holes. Technical Notes: 1. Thermally decoupled liners are liners that feature at least a support structure designed to carry mechanical loads and a combustion facing structure designed to protect the support structure from the heat of combustion. The combustion facing structure and support structure have independent thermal displacement (mechanical displacement due to thermal load) with respect to one another, i.e. they are thermally decoupled. 2. Combustor exit temperature is the bulk average gas path total (stagnation) temperature between the combustor exit plane and the leading edge of the turbine inlet guide vane (i.e., measured at engine station T40 as defined in SAE ARP 755A) when the engine is running in a "steady state mode" of operation at the certificated maximum continuous operating temperature. N.B. See 9E003.c. for "technology" "required" for manufacturing cooling holes. 3. Components that are any of the following: a. Manufactured from organic "composite" materials designed to operate above 588 K (315 °C); a. Manufactured from organic "composite" materials designed to operate above 588 K (315 °C); b. Manufactured from any of the following: 1. Metal "matrix" "composites" reinforced by any of the following: a. Materials specified in 1C007; b. "Fibrous or filamentary materials" specified in 1C010; or c. Aluminides specified in 1C002.a.; or 2. Ceramic "matrix" "composites" specified in 1C007.; or c. Stators, vanes, blades, tip seals (shrouds), rotating blings, rotating blisks, or splitter ducts, that are all of the following: 1. Not specified in 9E003.a.3.a.; 2. Designed for compressors or fans; and 3. Manufactured from material specified in 1C010.e. with resins specified in 1C008; Technical Note: A splitter duct performs the initial separation of the air-mass flow between the bypass and core sections of the engine. 4. Uncooled turbine blades, vanes or "tip-shrouds", designed to operate at a gas path temperature of 1373 K (1100 °C) or more; 5. Cooled turbine blades, vanes, "tip-shrouds" other than those described in 9E003.a.1., designed to operate at a gas path temperature of 1693 K (1420 °C) or more; 4. Uncooled turbine blades, vanes or "tip shrouds", designed to operate at a gas path temperature of 1373 K (1100 °C) or more; 5. Cooled turbine blades, vanes, "tip shrouds" other than those described in 9E003.a.1., designed to operate at a gas path temperature of 1693 K (1420 °C) or more; Technical Note: Gas path temperature is the bulk average gas path total (stagnation) temperature at the leading edge plane of the turbine component when the engine is running in a "steady state mode" of operation at the certificated or specified maximum continuous operating temperature. 6. Airfoil-to-disk blade combinations using solid state joining; 6. Aerofoil-to-disk blade combinations using solid state joining; 7. Not used; 8. Damage tolerant gas turbine engine rotor components using powder metallurgy materials specified in 1C002.b.; or Technical Note: … 26 unchanged lines … d. "Technology" "required" for the "development" or "production" of helicopter power transfer systems or tilt rotor or tilt wing "aircraft" power transfer systems; e. "Technology" for the "development" or "production" of reciprocating diesel engine ground vehicle propulsion systems having all of the following: 1. Box volume of 1,2 m3 or less; 2. An overall power output of more than 750 kW based on 80/1269/EEC, ISO 2534 or national equivalents; and 2. An overall power output of more than 750 kW based on 80/1269/EEC, ISO 2534 or national equivalents; and 3. Power density of more than 700 kW/m3 of box volume; Technical Note: Box volume in 9E003.e. is the product of three perpendicular dimensions measured in the following way: … 18 unchanged lines … a. Operating at pressure ratios of 4:1 or higher; b. Mass flow in the range from 30 to 130 kg per minute; and c. Variable flow area capability within the compressor or turbine sections; 3. "Technology" "required" for the "production" of fuel injection systems with a specially designed multifuel (e.g., diesel or jet fuel) capability covering a viscosity range from diesel fuel (2,5 cSt at 310,8 K (37,8 °C)) down to gasoline fuel (0,5 cSt at 310,8 K (37,8 °C)) and having all of the following: 3. "Technology" "required" for the "production" of fuel injection systems with a specially designed multifuel (e.g., diesel or jet fuel) capability covering a viscosity range from diesel fuel (2,5 cSt at 310,8 K (37,8 °C)) down to gasoline fuel (0,5 cSt at 310,8 K (37,8 °C)) and having all of the following: a. Injection amount in excess of 230 mm3 per injection per cylinder; and b. Electronic control features specially designed for switching governor characteristics automatically depending on fuel property to provide the same torque characteristics by using the appropriate sensors; g. "Technology" "required" for the "development" or "production" of high output diesel engines for solid, gas phase or liquid film (or combinations thereof) cylinder wall lubrication and permitting operation to temperatures exceeding 723 K (450 °C), measured on the cylinder wall at the top limit of travel of the top ring of the piston; g. "Technology" "required" for the "development" or "production" of high output diesel engines for solid, gas phase or liquid film (or combinations thereof) cylinder wall lubrication and permitting operation to temperatures exceeding 723 K (450 °C), measured on the cylinder wall at the top limit of travel of the top ring of the piston; Technical Note: High output diesel engines are diesel engines with a specified brake mean effective pressure of 1,8 MPa or more at a speed of 2300 r.p.m., provided the rated speed is 2300 r.p.m. or more. High output diesel engines are diesel engines with a specified brake mean effective pressure of 1,8 MPa or more at a speed of 2300 r.p.m., provided the rated speed is 2300 r.p.m. or more. h. "Technology" for gas turbine engine "FADEC systems" as follows: 1. "Development" "technology" for deriving the functional requirements for the components necessary for the "FADEC system" to regulate engine thrust or shaft power (e.g., feedback sensor time constants and accuracies, fuel valve slew rate); 2. "Development" or "production" "technology" for control and diagnostic components unique to the "FADEC system" and used to regulate engine thrust or shaft power; … 19 unchanged lines … 9E102"Technology" according to the General Technology Note for the "use" of space launch vehicles specified in 9A004, goods specified in 9A005 to 9A011, 'UAV's specified in 9A012 or goods specified in 9A101, 9A102, 9A104 to 9A111, 9A112.a., 9A115 to 9A121, 9B105, 9B106, 9B115, 9B116, 9B117, 9D101 or 9D103. Technical Note: In 9E102 UAV means unmanned aerial vehicle systems capable of a range exceeding 300 km.